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| Presentation | 2024-03-01 10:15 28-GHz-Band GaN HEMT Outphasing Amplifier MMIC Designed by Considering Insertion Loss at Dual-Power-Level Optimization Taiki Kobayashi, Kazuhiko Honjo, Ryo Ishikawa (UEC)  MW2023-189 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The development of the fifth generation mobile communications (5G) will use higher frequencies such as millimeter wave bands and more advanced modulation such as orthogonal frequency division multiplexing (OFDM) for faster transmission and higher spectrum efficiency. The use of higher frequency bands complicates circuit design to achieve low insertion loss. Also, OFDM increases the peak-to-average power ratio (PAPR) of the modulated signal. In this research, an outphasing amplifier, which is a power amplifier (PA) that efficiently amplifies wide dynamic range signals, was designed on a MMIC in the millimeter wave band, 28 GHz. Using the insertion loss map created on the Smith chart, the circuit was optimized for two output power levels: low output power level and high output power level. The fabricated GaN HEMT outphasing amplifier MMIC exhibited a maximum drain efficiency of 45% and a drain efficiency of 22% at 5 dB backoff at 28.5 GHz. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Outphasing amplifier / Wide dynamic range / GaN HEMT / MMIC / Millimeter wave / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 123, no. 396, MW2023-189, pp. 74-77, Feb. 2024. | |
| Paper # | MW2023-189 | |
| Date of Issue | 2024-02-22 (MW) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | MW2023-189 |
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| Conference Information | |
| Committee | MW |
| Conference Date | 2024-02-29 - 2024-03-01 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okayama Prefectural University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Microwave, etc. |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2024-02-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 28-GHz-Band GaN HEMT Outphasing Amplifier MMIC Designed by Considering Insertion Loss at Dual-Power-Level Optimization |
| Sub Title (in English) | |
| Keyword(1) | Outphasing amplifier |
| Keyword(2) | Wide dynamic range |
| Keyword(3) | GaN HEMT |
| Keyword(4) | MMIC |
| Keyword(5) | Millimeter wave |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Taiki Kobayashi |
| 1st Author's Affiliation | The University of Electro-Communications (UEC) |
| 2nd Author's Name | Kazuhiko Honjo |
| 2nd Author's Affiliation | The University of Electro-Communications (UEC) |
| 3rd Author's Name | Ryo Ishikawa |
| 3rd Author's Affiliation | The University of Electro-Communications (UEC) |
| 4th Author's Name | |
| 4th Author's Affiliation | () |
| 5th Author's Name | |
| 5th Author's Affiliation | () |
| 6th Author's Name | |
| 6th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2024-03-01 10:15:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | MW2023-189 |
| Volume (vol) | vol.123 |
| Number (no) | no.396 |
| Page | pp.74-77 |
| #Pages | 4 |
| Date of Issue | 2024-02-22 (MW) |
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