講演抄録/キーワード |
講演名 |
Analysis and Fabrication of Rectenna with SOI-MOSFET Diode and High Impedance Antenna for RF Energy Harvesting ○Keisuke Kawano・Yasunori Tsuchiya・Jiro Ida・Takayuki Mori(Kanazawa Inst of Tech) エレソ技報アーカイブはこちら |
抄録 |
(和) |
We analyzed and fabricated the rectenna with combination of the SOI-MOSFET diode and the high impedance antenna for the ultralow input power of RF energy harvesting. The low parasitic capacitance of the SOI MOSFET diode is inevitable for improving the rectification efficiency when using the high impedance antenna over 2 k??. It was clarified with ADS simulations, compared with the bulk-MOSFET diode. The two type rectenna were fabricated with the unbalanced and the balanced type rectifier circuits, composed with the SOI-MOSFET diodes, and the monopole and the dipole 10 k?? folded dipole antenna. The efficiency of around 8% were obtained with input power of -30 dBm. |
(英) |
We analyzed and fabricated the rectenna with combination of the SOI-MOSFET diode and the high impedance antenna for the ultralow input power of RF energy harvesting. The low parasitic capacitance of the SOI MOSFET diode is inevitable for improving the rectification efficiency when using the high impedance antenna over 2 k??. It was clarified with ADS simulations, compared with the bulk-MOSFET diode. The two type rectenna were fabricated with the unbalanced and the balanced type rectifier circuits, composed with the SOI-MOSFET diodes, and the monopole and the dipole 10 k?? folded dipole antenna. The efficiency of around 8% were obtained with input power of -30 dBm. |
キーワード |
(和) |
Rectenna / RF energy harvestning / SOI / High impedance antenna / / / / |
(英) |
Rectenna / RF energy harvestning / SOI / High impedance antenna / / / / |
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