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Paper Abstract and Keywords
Presentation
Field-Plate Length Dependence of 2.4-GHz Rectification Characteristics of Gated-Anode GaN HEMT Based Diode
Gen Taguchi, Naoya Kishimoto, Youichi Tsuchiya, Debaleen Biswasa, Ma Qiang (Nagoya Inst. of Tech.), Yuji Ando, Hidemasa Takahashi (Nagoya Univ), Kenji Itoh, Naoki Sakai (Kanazawa Inst. of Tech), Akio Wakejima (Nagoya Inst. of Tech.)
Abstract (in Japanese) (See Japanese page) 
(in English) We demonstrate field-plate (FP) length dependence of 2.4-GHz rectification characteristics of gated-anode GaN HEMT based diode (GAD) in which gate and one of ohmic electrodes are short-circuited.
I-V characteristics are identical, i.e, a forward current of 327 mA/mm at an anode voltage of 2 V with Von of 0.47 V and a breakdown voltage of approximately 100 V, with a FP from 0.3 to 2.3 um.
On the other hand, conversion efficiency increases with decrease in the FP length. These results indicate that an anode capacitance appended by the FP increases a switching loss in the GAD.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN HEMT / gated-anode GaN HEMT based diode / field-plate / Microwave wireless power transfer / / / /  
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Conference Information
Committee WPT  
Conference Date 2022-12-05 - 2022-12-06 
Place (in Japanese) (See Japanese page) 
Place (in English) Uji Obaku Plaza Kihada Hall, Uji Campus, Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2022 Asian Wireless Power Transfer Workshop (AWPT 2022) 
Paper Information
Registration To WPT 
Conference Code 2022-12-WPT 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Field-Plate Length Dependence of 2.4-GHz Rectification Characteristics of Gated-Anode GaN HEMT Based Diode 
Sub Title (in English)  
Keyword(1) GaN HEMT  
Keyword(2) gated-anode GaN HEMT based diode  
Keyword(3) field-plate  
Keyword(4) Microwave wireless power transfer  
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1st Author's Name Gen Taguchi  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
2nd Author's Name Naoya Kishimoto  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
3rd Author's Name Youichi Tsuchiya  
3rd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
4th Author's Name Debaleen Biswasa  
4th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
5th Author's Name Ma Qiang  
5th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
6th Author's Name Yuji Ando  
6th Author's Affiliation Nagoya University (Nagoya Univ)
7th Author's Name Hidemasa Takahashi  
7th Author's Affiliation Nagoya University (Nagoya Univ)
8th Author's Name Kenji Itoh  
8th Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. of Tech)
9th Author's Name Naoki Sakai  
9th Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. of Tech)
10th Author's Name Akio Wakejima  
10th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
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