講演抄録/キーワード |
講演名 |
8.5 GHz-Band GaN HEMT High-Efficiency Power Amplifier with Harmonic Reactive Termination ○Haruka Nishizawa・Yoichiro Takayama・Ryo Ishikawa・Kazuhiko Honjo(UEC) エレソ技報アーカイブはこちら |
抄録 |
(和) |
In the 5th generation mobile communication (5G), the use of a higher frequency band is planned for large capacity commu-nication. However, it is difficult to realize high-efficiency power amplifier at the higher frequency band due to a harmonic treatment. In this research, A GaN HEMT power amplifier operating at 8.5 GHz band was developed based on a harmonic reactive termination technique. The fabricated amplifier exhibited a maximum power-added efficiency of 63% and a maxi-mum drain efficiency of 78% at 8.48 GHz. |
(英) |
In the 5th generation mobile communication (5G), the use of a higher frequency band is planned for large capacity commu-nication. However, it is difficult to realize high-efficiency power amplifier at the higher frequency band due to a harmonic treatment. In this research, A GaN HEMT power amplifier operating at 8.5 GHz band was developed based on a harmonic reactive termination technique. The fabricated amplifier exhibited a maximum power-added efficiency of 63% and a maxi-mum drain efficiency of 78% at 8.48 GHz. |
キーワード |
(和) |
Power amplifier / High efficiency / Harmonic tuning / / / / / |
(英) |
Power amplifier / High efficiency / Harmonic tuning / / / / / |
文献情報 |
信学技報 |
資料番号 |
|
発行日 |
|
ISSN |
|
PDFダウンロード |
|