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Paper Abstract and Keywords
Presentation
Possibility of Super Steep Subthreshold Slope Devices for High Efficiency RF Energy Harvesting of Ultra Low Power Input
Jiro Ida, Kenji Itoh (KIT), Koichiro Ishibashi (UEC)
Abstract (in Japanese) (See Japanese page) 
(in English) The new diode technologies for RF energy harvesting of the ultralow power input was discussed. The limit of the conventional diodes, such as the gate controlled diode and the shottky barrier diode, was reconfirmed with measurements on the ultralow voltage range. The sharp I-V on the same voltage range was obtained with our newly proposed super steep slope PN-Body Tied SOI FETs. It will be promising for the ultralow power rectification. The result of simple circuit simulations indicates that it has possibility of working under the ultralow power input of -40dBm.
Keyword (in Japanese) (See Japanese page) 
(in English) RF energy harvesting / Backward tunnel diode / Steep slope device / SOI / / / /  
Reference Info. IEICE Tech. Rep.
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Conference Information
Committee MW  
Conference Date 2017-06-14 - 2017-06-16 
Place (in Japanese) (See Japanese page) 
Place (in English) KMUTT, Bangkok, Thailand 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2017 Thailand-Japan MicroWave (TJMW2017) 
Paper Information
Registration To MW 
Conference Code 2017-06-MW 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Possibility of Super Steep Subthreshold Slope Devices for High Efficiency RF Energy Harvesting of Ultra Low Power Input 
Sub Title (in English)  
Keyword(1) RF energy harvesting  
Keyword(2) Backward tunnel diode  
Keyword(3) Steep slope device  
Keyword(4) SOI  
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1st Author's Name Jiro Ida  
1st Author's Affiliation Kanazawa Institute of Technology (KIT)
2nd Author's Name Kenji Itoh  
2nd Author's Affiliation Kanazawa Institute of Technology (KIT)
3rd Author's Name Koichiro Ishibashi  
3rd Author's Affiliation The University of Electro-Communications (UEC)
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