|
Chair |
|
Shuichi Fukuda |
Vice Chair |
|
Shigeru Yanagi |
Secretary |
|
Kazuaki Wakai, Tetsushi Yuge |
Assistant |
|
Yoshiyuki Ihara, Yoshino Fukai |
|
|
Chair |
|
Takao Waho |
Vice Chair |
|
Masaaki Kuzuhara |
Secretary |
|
Tsuyoshi Tanaka, Manabu Arai |
Assistant |
|
Shin-ichiro Takatani |
|
Conference Date |
Fri, Nov 25, 2005 10:10 - 16:20 |
Topics |
|
Conference Place |
Chuo-Denki-Kurabu |
Address |
2-1-25, Doujimahama, Kita-ku, Osaka-shi, Japan |
Transportation Guide |
5 minutes walk from JR Osaka station, or 6 minutes walk from JR Kita-sinti station http://www.chuodenki-club.or.jp/map/annai.html |
Contact Person |
06-6345-6351 |
Sponsors |
This conference is co-sponsored by the Reliability Engineering Association of Japan and IEEE-RS Japan Chapter
|
Fri, Nov 25 AM 10:10 - 11:30 |
(1) |
10:10-10:50 |
[Invited Talk]
Reliability Evaluation in Low Temperature Poly-Si Thin Film Transistors |
Yukiharu Uraoka, Takashi Fuyuki (NAIST) |
(2) |
10:50-11:30 |
[Invited Talk]
Barrier films prepared for organic electroluminescence device |
Akira Heya (Univ. of Hyogo), Toshiharu Minami (IRII), Toshikazu Niki, Shigehira Minami (Ishikawa Seisakusyo), Atsushi Masuda, Hironobu Umemoto (JAIST), Naoto Matsuo (Univ. of Hyogo), Hideki Matsumura (JAIST) |
Fri, Nov 25 PM 13:10 - 16:20 |
(3) |
13:10-13:35 |
Development of accurate NBTI lifetime prediction and evaluation methods using hole injection |
Akinobu Teramoto, Kazufumi Watanabe, Rihito Kuroda (Tohoku Univ.), Michihiko Mifuji, Takahisa Ymaha (Rohm), Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
(4) |
13:35-14:00 |
-- |
Ryouhei Uno, Haruhiko Yoshida, Shinichi Sato (Univ. of Hyogo) |
(5) |
14:00-14:25 |
Localization Method of Failure Point with Scan Chain |
Takeshi Kataoka, Hisakazu Watanabe, Yasushi Kannan, Masaji Tanaka (Matsushita Electric Industrial) |
(6) |
14:25-14:50 |
Highly reliable InP-based HBTs with a ledge structure operating at current density over 2mA/um2 |
Yoshino K. Fukai, Kenji Kurishima, Minoru Ida, Shoji Yamahata, Takatomo Enoki (NTT Photonics Labs.) |
|
14:50-15:05 |
Break ( 15 min. ) |
(7) |
15:05-15:30 |
-- |
Yoichi Nogami, Takayuki Hisaka, Naohito Yoshida (Mitsubishi) |
(8) |
15:30-15:55 |
Electrical characterization of n-GaN exposed to hydrogen plasma |
Masayuki Suda, Seiji Nakamura, Michihiko Suhara, Tsugunori Okumura (Tokyo Metropolitan Univ.) |
(9) |
15:55-16:20 |
Investigation of gate leakage current and gate control anomalies in nanometer-scale Schottky gate AlGaN/GaN HFETs |
Seiya Kasai, Junji Kotani, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) |
Announcement for Speakers |
General Talk (25) | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
Invited Talk (40) | Each speech will have 35 minutes for presentation and 5 minutes for discussion. |
Contact Address and Latest Schedule Information |
R |
Technical Committee on Reliability (R) [Latest Schedule]
|
Contact Address |
Kazuaki Wakai(NHK)
TEL0480-85-1118,FAX0480-85-1508
E-:ik-dm |
ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
Contact Address |
Tsuyoshi Tanaka(Matsushita)
TEL: 075-956-9083, FAX: 075-956-9110
E-: pac
Manabu Arai(New JRC)
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr
Shinichiro Takatani(Hitachi)
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr |
Last modified: 2005-09-26 20:21:18
|