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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Shunichiro Ohmi (Tokyo Inst. of Tech.)
Vice Chair Tatsuya Usami (Rapidus)
Secretary Tomoyuki Suwa (Tohoku Univ.), Taiji Noda (Panasonic)
Assistant Takuji Hosoi (Kwansei Gakuin Univ.), Takuya Futase (Western Digital)

Conference Date Wed, Feb 21, 2024 10:00 - 16:35
Topics  
Conference Place  
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Registration Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM.

Wed, Feb 21 PM 
10:00 - 16:35
  10:00-10:05 Opening ( 5 min. )
(1) 10:05-10:45 [Invited Talk]
Pre-treatment Study for Barrier-less Ruthenium Filling into Single Damascene via of Sub 20nm Hole SDM2023-81
Ryota Yonezawa, Kai-Hung Yu, Hirokazu Aizawa, Hidenao Suzuki, Cory Wajda, Gert Leusink (TTCA)
(2) 10:45-11:25 [Invited Talk]
Development of Superconducting Nb Interconnects for Low-Temperature SoC for Qubit Control SDM2023-82
Hideaki Numata, Noriyuki Iguchi (NBS), Masamitsu Tanaka (Nagoya Univ.), Koichiro Okamoto, Sadahiko Miura (NBS), Ken Uchida (UTokyo), Hiroki Ishikuro (Keio Univ.), Toshitsugu Sakamoto, Munehiro Tada (NBS)
(3) 11:25-12:05 [Invited Talk]
Development of Backside Buried Metal Layer Technology to Enhance Power Integrity of Three-Dimensional Integrated Circuits SDM2023-83
Naoya Watanabe, Yuuki Araga, Haruo Shimamoto (AIST), Makoto Nagata (Kobe Univ.), Katsuya Kikuchi (AIST)
  12:05-13:30 Lunch Break ( 85 min. )
(4) 13:30-14:10 [Invited Talk]
Direct observation of local electromagnetic field distribution in materials and devices SDM2023-84
Naoya Shibata (UTokyo)
(5) 14:10-14:50 [Invited Talk]
Optimization of Pre-Bonding Surface for Cu/SiCN Hybrid Bonding SDM2023-85
Kohei Nakayama, Kenta Hayama, Yutesu Kamiya, Fmihiro Inoue (YNU)
  14:50-15:10 Break ( 20 min. )
(6) 15:10-15:50 [Invited Talk]
Metallization and CMOS Directly Bonded to Array (CBA) Technology for 3D Flash Memory SDM2023-86
Masayoshi Tagami (KIOXIA)
(7) 15:50-16:30 [Invited Talk]
Recent Studies of WoW and CoW Cu-Cu Hybrid Bonding SDM2023-87
Yoshihisa Kagawa, Yukako Ikegami, Takahiro Kamei, Hayato Iwamoto (SSS)
  16:30-16:35 Closing ( 5 min. )

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address  


Last modified: 2023-12-27 16:14:06


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