Thu, Oct 11 PM 13:00 - 18:00 |
|
13:00-13:05 |
Opening Address ( 5 min. ) |
(1) |
13:05-13:30 |
Polarization Properties in III-nitride Quantum Wells with Various Substrate Orientations |
Atsushi Yamaguchi (Kanazawa Inst. of Technology) |
(2) |
13:30-13:55 |
Micro photoluminescence spectroscopy of single InGaN/GaN nanocolumn |
Akio Kaneta (Kyoto Univ./JST), Akinobu Kanai (Kyoto Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ./JST), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST) |
(3) |
13:55-14:20 |
Fabrication of GaN/AlGaN nanocolumn LEDs by rf-assisted molecular beam epitaxy |
Hiroto Sekiguchi (Sophia Univ./JST), Kei Kato, Jo Tanaka (Sophia Univ.), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST) |
|
14:20-14:30 |
Break ( 10 min. ) |
(4) |
14:30-14:55 |
Fabrication of GaN-based UV LEDs with metal, oxide and GaN stacks |
Shigetoshi Komiyama, Kazuyuki Noguchi, Yoshihiro Mashiyama, Kaori Yoshioka, Tohru Honda (Kogakuin Univ.) |
(5) |
14:55-15:20 |
High efficiency Ultraviolet LEDs on Si Using InAlGaN Multi-Quantum-Wells with High Indium Contents |
Yasuyuki Fukushima, Yuji Takase, Manabu Usuda, Kenji Orita, Tetsuzo Ueda, Tsuyoshi Tanaka (M. E. I. Co., Ltd.) |
(6) |
15:20-15:45 |
Effects of trace moisture in NH3 gas on electro-luminescence intensity of InGaN LED
-- Moisture control in NH3 gas for MOVPE growth of LED structure -- |
Hirotaka Mangyou, Hiroyuki Ono, Yoshihiko Kobayashi, Koh Matsumoto, Kazunobu Shibuya (TAIYO NIPPON SANSO) |
(7) |
15:45-16:10 |
340nm-band high-power UV-LED using p-type InAlGaN layers and high quality AlN |
Sachie Fujikawa (RIKEN), Takayoshi Takano, Yukihiro Kondo (Matsushita Electric Works, Ltd.), Hideki Hirayama (RIKEN) |
|
16:10-16:20 |
Break ( 10 min. ) |
(8) |
16:20-16:45 |
Characteristics of polarized emission from nonpolar m-plane InGaN-based LEDs |
Hiroki Tsujimura, Satoshi Nakagawa, Kuniyoshi Okamoto, Hiroaki Ohta (Rohm Co., Ltd.) |
(9) |
16:45-17:10 |
Suppression of COD in pure-blue Lasers with current injecition-free region near the laser facet. |
Osamu Goto (Sony), Yoshitsugu Ohizumi, Miwako Shouji, Takayuki Tanaka, Yukio Hoshina, Makoto Ohta (Sony Shiroishi Semiconductor Inc.), Yoshifumi Yabuki, Shigetaka Tomiya, Masao Ikeda (Sony) |
(10) |
17:10-17:35 |
Deep UV Lasing of AlGaN Multiple Quantum Well Lasers and Its Anisotropc Properties of Laser and Spontaneous Edge and Surface Emissions |
Hideo Kawanishi, Eiichiro Niikura (Kohgakuin Univ.) |
(11) |
17:35-18:00 |
UV-response characteristics of insulator/n-GaN MIS structures for sensor application |
Chihoko Mizue, Tetsuya Matsuyama, Junji Kotani, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.) |
Fri, Oct 12 AM 09:00 - 16:55 |
(12) |
09:00-09:25 |
Theoretical Study of Multi-Step and Graded Field Plates for AlGaN/GaN HEMTs |
Ryosuke Sakai, Taketoshi Nishida, Kenji Shiojima, Masaaki Kuzuhara (Fniv. of Fukui) |
(13) |
09:25-09:50 |
Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) plane |
Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka (MEI) |
(14) |
09:50-10:15 |
Low leakage current ITO schottky electrode for AlGaN/GaN HEMT |
Keita Matsuda, Takeshi Kawasaki, Ken Nakata, Takeshi Igarashi, Seiji Yaegashi (Eudyna Devices) |
(15) |
10:15-10:40 |
Study on AlGaN/GaN HEMT structures on 4-inch Si (111) substrates with thick buffer layers |
Yutaka Terada, Takaaki Suzue, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. of Tech.) |
|
10:40-10:50 |
Break ( 10 min. ) |
(16) |
10:50-11:15 |
Analysis of Buffer-Related Slow Current Transients and Current Collapse in AlGaN/GaN HEMTs |
Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) |
(17) |
11:15-11:40 |
Surface control of AlGaN/GaN strcutures |
Masafumi Tajima, Junji Kotani, Takahiro Tamura, Tamotsu Hashizume (Hokkaido Univ.) |
(18) |
11:40-12:05 |
Theoretical study on high-frequency performance of AlInN/InGaN heterojunction FETs |
Kazuki Kodama, Taketoshi Nishida, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui) |
(19) |
12:05-12:30 |
Ku-band AlGaN/GaN HEMTs with 50W Output Power |
Yasushi Kashiwabara, Shigenori Takagi, Kazutoshi Masuda, Keiichi Matsushita, Ken Onodera, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) |
|
12:30-13:50 |
Lunch Break ( 80 min. ) |
(20) |
13:50-14:15 |
Electrical characterization of homoepitaxially-grown pn GaN diodes |
Yutaka Tokuda, Youichi Matsuoka, Takeshi Seo (Aichi Inst. Tech.), Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi (Toyota Central R&D Labs. Inc.) |
(21) |
14:15-14:40 |
Growth Condition of Blue Emitting InGaN Microcrystals |
Hisashi Kanie, Kenichi Akashi (TUS) |
(22) |
14:40-15:05 |
Fabrication of novel InN/GaN multi-quantum wells consisting of one-monolayer InN wells in GaN matrix for application for new structure light emitting devices |
Naoki Hashimoto, Akihiko Yuki, Hideyuki Saito (Chiba Univ.), Xinqiang Wang (JST), Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ./JST) |
(23) |
15:05-15:30 |
Selective MOVPE of InGaN/GaN on a micro-faceted GaN fabricated on an Si substrate |
Yoshiki Nakajima, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki (Nagoya Univ.) |
|
15:30-15:40 |
Break ( 10 min. ) |
(24) |
15:40-16:05 |
Preparation of GaN Crystals by a Reaction of Ga with Li3N |
Akira Mabuchi, Takayoshi Hirano, Takashi Sugiura, HIdekiMinoura (Gifu Univ) |
(25) |
16:05-16:30 |
Fabrication of MgZnO films by molecular precursor method and its application to UV-transparent electrodes |
Yoshihiro Mashiyama, Kaori Yoshioka, Shigetoshi Komiyama, Shinsuke Adachi, Mitsunobu Satou, Tohru Honda (Kogakuin Univ.) |
(26) |
16:30-16:55 |
Atmospheric-pressure MOVPE growth of In-rich (1~0.5) InAlN |
Yoshinori Hochin, Akihiro Hashimoto, Akio Yamamoto (Fukui Univ.) |