Fri, Dec 12 AM 10:00 - 12:00 |
(1) |
10:00-10:15 |
Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires |
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) |
(2) |
10:15-10:30 |
Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs |
Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) |
(3) |
10:30-10:45 |
Activation of B+ or B10H14+ Implanted Silicon by Soft X-ray Irradiation |
Akira Heya, Fumito Kusakabe, Shota Hirano, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo) |
(4) |
10:45-11:00 |
Conduction mechanism and Charge retention mechanism for DNA memory transistor |
Shouhei Nakamura, Naoto Matsuo, Akira Heya, Kazushige Yamana, Tadao Takada (Univ. of Hyogo), Masatake Fukuyama, Shin Yokoyama (hiroshima Univ) |
(5) |
11:00-11:15 |
Irradiation Effect of Carbon-Based Polyatomic Ions on Si Substrate |
Mitsuaki Takeuchi, Kyohei Hayashi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.), Tsutomu Nagayama, Koji Matsuda (Nissin Ion Equipment) |
(6) |
11:15-11:30 |
Photoelectric conversion function analysis of the silicon solar module using electroluminescence(EL) emission intensity |
Tsuyoshi Tomimoto, Shota Tsuzuki, Ayumi Tani (NAIST) |
(7) |
11:30-11:45 |
Application of Laser Doping with Boron-doped Silicon Nano Ink to High Efficiency Silicon Solar Cell |
Mitsuaki Manabe, Hideki Sakagawa, Hideki Nishimura (NAIST), Yuka Tomizawa, Yoshinori Ikeda (Teijin), Takashi Fuyuki (NAIST) |
(8) |
11:45-12:00 |
Micro-Wall Solar Cell with Electric-Field Effect |
Kohei Oki, Shota Wakamiya, Takahiro Kobayashi, Akira Heya, Naoto Matsuo (Univ. of Hyogo) |
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Lunch Break |
Fri, Dec 12 PM 13:00 - 15:30 |
(9) |
13:00-13:15 |
Evaluation of photoconductivities of n-ch, p-ch, pin-ch poly-Si TFPTs |
Takahiro Fuchiya, Yoshiharu Maeda, Takayuki Kadonome, Takumi Tanaka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ) |
(10) |
13:15-13:30 |
Characteristic Comparison of Frequency Modulation Type Photo Sensors using N-type・P-type・PIN-Type Thin-Film Phototransistors |
Yoshiharu Maeda, Takahiro Fuchiya, Takayuki Kadonome, Takumi Tanaka, Shota Haruki, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) |
(11) |
13:30-13:45 |
Low-Temperature CLC Poly-Si TFTs with Sputtered HfO2 Gate Dielectric Layer |
Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.) |
(12) |
13:45-14:00 |
Characteristic comparison of hybrid-type temperature sensors using poly-Si TFTs |
Katsuya Kito, Hisashi Hayashi, Shuhei Kitajima, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) |
(13) |
14:00-14:15 |
Characterization of Synchronous and Asynchronous Circuits using poly-Si TFTs |
Yosuke Nagase (Ryukoku Univ.), Tokiyoshi Matsuda, Mutsumi Kimura (Osaka Univ.), Taketoshi Matsumoto, Hikaru Kobayashi (Ryukoku Univ.) |
(14) |
14:15-14:30 |
Crystallization of Germanium Film with (111) Orientation on Amorphous Substrate by Laser Annealing |
Toru Takao, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) |
(15) |
14:30-14:45 |
Research and Development of Magnetic Field Sensors using Poly-Si Hall Device with Gate terminal and IGZO Hall Device |
Takaaki Matsumoto, Akito Yoshikawa, Shougo Miyamura, Haruki Shiga, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Tokuro Ozawa, Koji Aoki, Chih-Che Kuo (AUO japan) |
(16) |
14:45-15:00 |
Characteristics of Ga-Sn-Oxide thin film |
Yuta Kato, Daiki Nishimoto, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) |
(17) |
15:00-15:15 |
Effect of deposition conditions on the properties of IGZO thin film |
Katsuya Nishino, Kota Takahashi, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) |
(18) |
15:15-15:30 |
Characterization of the touch panel circuit using ITZO TFTs |
Yuki Koga, Tokiyoshi Matsuda (Ryukoku Univ.), Mamoru Furuta (Kochi Univ. of Technol.), Mutsumi Kimura (Ryukoku Univ.) |
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Break |
Fri, Dec 12 PM 15:45 - 18:00 |
(19) |
15:45-16:00 |
Porous Silicon 3D micro structure formation by strain-induced self-rolling by porosity control |
Keita Ishiguro, Masaki Denokami, Kanna Aoki, Minoru Fujii (Kobe Univ.) |
(20) |
16:00-16:15 |
Formation of nc-Si in SiOx by Soft X-ray Irradiation |
Fumito Kusakabe, Shota Hirano, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Takayasu Mochizuki, Shuji Miyamoto (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.) |
(21) |
16:15-16:30 |
Frequency dependence of Split C-V characteristics in Si-face 4H-SiC n-MOSFETs |
Hiroto Yuki (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba) |
(22) |
16:30-16:45 |
Interface Characterization of 4H-SiC MOSFETs by Single Pulse Id-Vgs Measurements |
Kosuke Isono (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba) |
(23) |
16:45-17:00 |
Temperature Dependence of Current Gain in 4H-SiC BJTs |
Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) |
(24) |
17:00-17:15 |
Atomic Layer Deposition of Al2O3 Film Utilizing Water Vapor Plasma Oxidation |
Tomoaki Umehara, Masahiro Horita, Koji Yoshitsugu, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) |
(25) |
17:15-17:30 |
Study of driving forces that cause resistive switching of binary transition metal oxide memory |
Ryosuke Koishi, Takumi Moriyama, Kouhei Kimura, Kouki Kawano, Hidetoshi Miyashita, Sang-Seon Lee, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) |
(26) |
17:30-17:45 |
Resistive switching characteristics of NiO-based ReRAM after semi-forming process. |
Hiroki Sasakura, Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.) |
(27) |
17:45-18:00 |
Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM)
-- Analyses of Various NiO Surface States Using Ab Initio Calculations -- |
Takumi Moriyama (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) |