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Technical Committee on Electronic Information Displays (EID) [schedule] [select]
Chair Tomokazu Shiga (Univ. of Electro-Comm.)
Vice Chair Mutsumi Kimura (Ryukoku Univ.), Yuko Kominami (Shizuoka Univ.)
Secretary Munekazu Date (NTT), Masahiro Yamaguchi (Tokyo Inst. of Tech.)
Assistant Rumiko Yamaguchi (Akita Univ.), Hiroyuki Nitta (Japan Display), Mitsuru Nakata (NHK), Takashi Kojiri (ZEON), Ryosuke Nonaka (Toshiba), Takeshi Okuno (Samsung)

Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yuzou Oono (Univ. of Tsukuba)
Vice Chair Tatsuya Kunikiyo (Renesas)
Secretary Rihito Kuroda (Tohoku Univ.)
Assistant Tadashi Yamaguchi (Renesas)

Conference Date Mon, Dec 14, 2015 11:00 - 16:30
Topics Si and Si-related Materials and Devices, and Display Technology 
Conference Place  
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.

Mon, Dec 14 AM 
11:00 - 13:15
(1) 11:00-11:15 Fabrication of FinFET Structure with High Selectivity Etching Using Newly Developed SiNx Etch Gas Takashi Kojiri (Tohoku Univ./ZEON), Tomoyuki Suwa, Keiichi Hashimoto, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.)
(2) 11:15-11:30 Study of Deoxyribonucleic Acid (DNA) for Channel Materials of MOSFET
-- Non-Coulomb Blockade/Staircase Phenomena --
Naoto Matsuo, Fumiya Nakamura, Tadao Takada, Kazushige Yamana, Akira Heya (Univ Hyogo), Shin Yokoyama (Hiroshima Univ), Yasuhisa Omura (Kansai Univ)
(3) 11:30-11:45 Memory Application of Ultrafine FET utilizing Supramolecular Protein Takahiko Ban, Mutsunori Uenuma (NAIST), Shinji Migita (AIST), Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka (NAIST)
(4) 11:45-12:00 Distribution of Forming Characteristics in NiO-based ReRAM Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.)
(5) 12:00-12:15 Effect of gate voltage application on the conversion efficiency of solar-cell Kohei Oki, Takashi Kusakabe, Naoto matsuo, Akira Heya (Univ. of Hyogo)
  12:15-13:15 Lunch ( 60 min. )
Mon, Dec 14 PM 
13:15 - 15:00
(6) 13:15-13:30 Lamp-voltage dependence of FLA crystallization for a-Ge film Shota Hirano, Akira Heya, Naoto Matsuo (Univ. of Hyogo), Naoya Kawamoto (Yamaguchi Univ.), Yoshiaki Nakamura, Takehiko Yokomori, Masaki Yoshioka (USHIO)
(7) 13:30-13:45 Unseeded Growth of Poly Crystalline Ge with (111) Surface Orientation on Insulator by Pulsed Green Laser Annealing Yoshiaki Nieda, Toru Takao (Nara Inst. of Sci.& Technol.), Masahiro Horita (Kyoto Univ.), Nobuo Sasaki (Japan women's Univ.), Yasuaki Ishikawa, Yukiharu Uraoka (Nara Inst. of Sci.& Technol.)
(8) 13:45-14:00 Evaluation of In2O3 film deposited by RF magnetron sputtering Toshihiro Yoshioka, Junji Ogawa, Masahiro Yuge, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
(9) 14:00-14:15 Characterization of GaxSn1-xO thin film by the mist CVD method Masahiro Yuge, Junji Ogawa, Tosihiro Yosioka, Yuta Kato, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ)
(10) 14:15-14:30 Dependence of MR effect on annealing temperature of IGZO Shogo Miyamura, Haruki Shiga, Kota Imanishi, Asuka Fukawa, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ)
(11) 14:30-14:45 Magnetic characteristic measurement of Cr-Si-N Haruki Shiga, Shogo Miyamura, Kota Imanishi, Asuka Hukawa, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ.), Yashushi Hiroshima (KOA)
  14:45-15:00 Break ( 15 min. )
Mon, Dec 14 PM 
15:00 - 16:30
(12) 15:00-15:15 Self-Aligned Metal Double Gate Low-Temperature Poly-Ge TFT with Thin Channel Layer on a Glass Substrate Yuya Nishimura, Akito Hara (Tohoku Gakuin Univ.)
(13) 15:15-15:30 Characterization of SnO2/Al2O3 thin film and evaluation of thin film transistor Junji Ogawa, Masahiro Yuge, Tosihiro Yosioka, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ)
(14) 15:30-15:45 Characteristic evaluation of electric current on infrared radiation in low-temperature poly-Si TFT Shuhei Kitajima, Katsuya Kitou, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Masahide Inoue (Huawei Japan)
(15) 15:45-16:00 Research and development of Artificial Retina using thin film transistors
-- in vitro experiment using TFT --
Shota Haruki, Keisuke Tomioka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryudai)
(16) 16:00-16:15 Operation verification of neural network using a simplified element by FPGA Nao Nakamura, Ryuhei Morita, Yuki Koga, Hiroki Nakanishi, Sumio Sugisaki, Tomoharu Yokoyama, Koki Watada, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
(17) 16:15-16:30 Research and development of cellular neural network with a simplified structure
-- Operation verification by FPGA and variable resistance --
Hiroki Nakanishi, Ryuhei Morita, Yuki Koga, Nao Nakamura, Sumio Sugisaki, Tomoharu Yokoyama, Koki Watada, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ)

Announcement for Speakers
General TalkEach speech will have 10 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
EID Technical Committee on Electronic Information Displays (EID)   [Latest Schedule]
Contact Address  
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E--mail: e3 


Last modified: 2015-10-22 23:12:38


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