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Chair |
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Kiyoshi Ishii |
Vice Chair |
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Kiichi Kamimura |
Secretary |
|
Toru Matsuura, Seiji Toyoda |
Assistant |
|
Hidehiko Shimizu |
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Chair |
|
Takao Waho |
Vice Chair |
|
Masaaki Kuzuhara |
Secretary |
|
Tsuyoshi Tanaka, Manabu Arai |
Assistant |
|
Shin-ichiro Takatani, Koichi Murata |
|
|
Chair |
|
Toshiaki Suhara |
Vice Chair |
|
Shinji Tsuji |
Secretary |
|
Atsushi Sugitatsu, Masahiro Aoki |
Assistant |
|
Tatsuo Hatta |
|
Conference Date |
Thu, Oct 5, 2006 13:00 - 17:00
Fri, Oct 6, 2006 09:30 - 17:15 |
Topics |
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Conference Place |
|
Contact Person |
075-383-2310 |
Thu, Oct 5 PM 13:00 - 17:00 |
(1) |
13:00-13:25 |
X-band AlGaN/GaN HEMT with over 40W Output Power |
Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba corp.) |
(2) |
13:25-13:50 |
Improvement of Breakdown Voltage of AlGaN/GaN HEMT |
Ken Nakata, Takeshi Kawasaki, Keita Matsuda, Takeshi Igarashi, Seiji Yaegashi (Eudyna) |
(3) |
13:50-14:15 |
RF characteristics of AlGaN/GaN-HEMTs on Si substrates |
Hideyuki Okita, Juro Mita, Yoshiaki Sano, Toshiharu Marui, Masanori Itoh, Shinichi Hoshi, Fumihiko Toda, Shohei Seki (Oki), Takashi Egawa (NIT) |
(4) |
14:15-14:40 |
Study on crystal growth of AlGaN/GaN HEMT on SiC substrate |
Takahiko Iwasaki, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. Tech.) |
(5) |
14:40-15:05 |
GaN Vertical Schottky Barrier Diodes with Pseudo-SuperJunction Structures |
Kazushi Nakazawa, Hiroaki Ueno, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric) |
|
15:05-15:20 |
Break ( 15 min. ) |
(6) |
15:20-15:45 |
Interface control for GaN-based electron devices |
Takeshi Kimura, Junji Kotani, Hiroki Kato, Masafumi Tajima, Eri Ogawa, Chihoko Mizue, Tamotsu Hashizume (Hokkaido University) |
(7) |
15:45-16:10 |
Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements |
Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT) |
(8) |
16:10-16:35 |
Temperature Distribution Analysis of AlGaN/GaN HFETs Operated at High Voltage Using Micro-Raman Spectroscopy |
Kenichi Kosaka, Tatsuya Hujishima (Ritsumeikan Univ.), Kaoru Inoue (FED), Akihiro Hinoki (Ritsumeikan Univ.), Tomoaki Yamada, Tadayoshi Tsuchiya, Junjiroh Kikawa, Shinichi Kamiya (FED), Akira Suzuki (Ritsumeikan Univ./FED), Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.) |
(9) |
16:35-17:00 |
Influences of nitrogen plasma on GaN growth on Si substrate by ECR-MBE growth method |
Tokuo Yodo, Yuki Shiraishi, Kiyotaka Hirata, Hiroyuki Tomita, Norikaki Nishie, Hiroaki Horibe, Keigo Iwata, Yoshiyuki Harada (Osaka Inst. of Tech.) |
Fri, Oct 6 AM 09:30 - 17:15 |
(10) |
09:30-09:55 |
* |
Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Ulrich T Schwarz, Harald Braun (Regensburg Univ.), Shinichi Nagahama, Takashi Mukai (Nichia Corp.) |
(11) |
09:55-10:20 |
Growth and optical properties of InGaN/GaN quantum wells on semipolar {11-22} GaN substrates |
Masaya Ueda, Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia) |
(12) |
10:20-10:45 |
Fabrication of optical communication wavelength photodetector using GaN/AlN multiple quantum disk nanocolumn on Si(111) substrate |
Hiroyuki Uchida, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.) |
|
10:45-11:00 |
Break ( 15 min. ) |
(13) |
11:00-11:25 |
Photoluminescence from inelastic scattering processes of excitons under intense-excitation conditions in a GaN thin film grown by Metal-organic vapor phase epitaxy |
Masaaki Nakayama, Hiroyasu Tanaka (Osaka City Univ.), Masanobu Ando, Toshiya Uemura (Toyoda Gosei) |
(14) |
11:25-11:50 |
Characteristics of Cathodoluminescence from bulk InGaN microcrystals |
Hisashi Kanie, Yuji Sema (Tokyo Univ. of Science) |
(15) |
11:50-12:15 |
Analysis of internal quantum efficiency of GaN-based light emitting diodes by investigating electroluminescence lifetime |
Kotaro Zaima (Toshiba), Tetsuo Narita (Nagoya Univ.), Shinji Saito, Koichi Tachibana, Hajime Nago, Genichi Hatakoshi, Shinya Nunoue (Toshiba) |
|
12:15-13:15 |
Lunch Break ( 60 min. ) |
(16) |
13:15-13:40 |
Fabrication of GaN-based unipolar UV LEDs grown by MOVPE |
Toshiaki Kobayashi, Shigetoshi Komiyama, Yoshihiro Mashiyama, Tohru Honda (Kogakuin Univ.) |
(17) |
13:40-14:05 |
Fabrication and Characterization of UV light emitter on various substrates |
Hirotaka Watanabe, Kazuyoshi Iida, Kenichiro Takeda, Kentaro Nagamatsu, Takafumi Sumii, Tetsuya Nagai, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Akira Bandoh (Showa-Denko) |
(18) |
14:05-14:30 |
GaN films deposited by CS-MBD with pulsed source feeding |
Masatoshi Arai, Koichi Sugimoto, Shinichi Egawa, Taichi Baba, Masaru Sawada, Tohru Honda (Kogakuin Univ.) |
(19) |
14:30-14:55 |
Maskless Epitaxial Lateral Overgrowth of GaN Using Dimethylhydrazine as a Nitrogen Precursor |
Jun Shimizu, Toshiyuki Takizawa, Tetsuzo Ueda (Matsushita Electric) |
(20) |
14:55-15:20 |
GaN/InAlN/GaN Hetero Barrier Varactor Diodes |
Nobuhisa Tanuma, Minoru Kubota, Munecazu Tacano (Meisei Univ.) |
|
15:20-15:35 |
Break ( 15 min. ) |
(21) |
15:35-16:00 |
Impact of acceptor concentration on electronic properties of n-GaN/p-SiC heterojunction for GaN/SiC heterojunction bipolar transistor |
Koichi Amari, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) |
(22) |
16:00-16:25 |
Direct nitridation of SiC surface and characterization of nitride layer by XPS |
Tetsuo Yamaguchi, Yoshiki Ishida, Chen Chen, Masataka Hagihara, Rinpei Hayashibe, Tomohiko Yamakami, Katsuya Abe, Kiichi Kamimura (Shinshu Univ.) |
(23) |
16:25-16:50 |
Position and Size Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE |
Taihei Yamaguchi (Ritsumeikan Univ.), Hiroyuki Naoi (Ritsumeikan univ. COE), Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.) |
(24) |
16:50-17:15 |
Effects of ion damage reduction due to N2+ on InN film growth on Si substrate by ECR-MBE method |
Tokuo Yodo, Teruya Shimada, Sumito Tagawa, Ryo Nishimoto, Shiro Hidaka, Keita Ishi, Hiroshi Segawa, Junichi Hirakawa, Yoshiyuki Harada (Osaka Inst.of Tech.) |
Contact Address and Latest Schedule Information |
CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
|
Contact Address |
Yoshitaka Kitamoto (Tokyo Institute of Technology)
TEL 045-924-5424, FAX 045-924-5433
E-: iem
Tohru Matsuura (ATR)
TEL 0774-95-1173, FAX 0774-95-1178
E-: hmatr |
ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
Contact Address |
Tsuyoshi Tanaka(Matsushita)
TEL: 075-956-9083, FAX: 075-956-9110
E-: erlci
Manabu Arai(New JRC)
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr
Shinichiro Takatani(Hitachi)
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr
Koichi Murata(NTT)
TEL:046-240-2871、FAX:046-270-2872
E-: aecl |
LQE |
Technical Committee on Lasers and Quantum Electronics (LQE) [Latest Schedule]
|
Contact Address |
Atsushi Sugitatsu (Mitsubishi Electric)
TEL +81-72-780-2653, FAX +81-72-780-3774
E-: SugiAMibiElectc
Masahiro Aoki (Hitachi)
TEL +81-42-323-1111, FAX +81-42-327-7786
E-: aoev |
Announcement |
Homepage of LQE is http://www.ieice.org/~lqe/jpn/ |
Last modified: 2006-07-27 19:47:08
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