(1) |
12:55-13:00 |
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Thu, Nov 29 PM 13:00 - 14:15 |
(1) |
13:00-13:25 |
Fabrication and optical anisotropy of GaN/AlN ultra-thin quantum wells |
Mitsuru Funato, Shuhei Ichikawa, Yoichi Kawakami (Kyoto Univ.) |
(2) |
13:25-13:50 |
Growth of epitaxial AlInN films on c-plane GaN and the relationship between their alloy compositions and microstructures |
Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech), Tetsuya Takeuchi (Meijo Univ.) |
(3) |
13:50-14:15 |
Recent progress toward realization of AlGaN deep UV LD |
Noritohsi Maeda (RIKEN), Yoichi Yamada (Yamaguchi Univ.), Masafumi Jo, Hideki Hirayama (RIKEN) |
Thu, Nov 29 PM 14:15 - 15:05 |
(4) |
14:15-14:40 |
Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing |
Yosuke Kajiwara, Aya Shindome, Toshiki Hikosaka, Masahiko Kuraguchi (Toshiba Corp.), Akira Yoshioka (Toshiba Electronic Device & Storage Corp.), Shinya Nunoue (Toshiba Corp.) |
(5) |
14:40-15:05 |
Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage |
Kenji Shiojima, Masataka Maeda (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) |
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15:05-15:15 |
Break ( 10 min. ) |
Thu, Nov 29 PM 15:15 - 16:55 |
(6) |
15:15-15:40 |
Experiment and evaluation for the methods of nanoimprinting moth eye structure |
Kenta Hiraga, Shigeru Kubota, Kensaku Kanomata, Bashir Ahmmad, Fumihiko Hirose (Yamagata Univ.) |
(7) |
15:40-16:05 |
Development and ion absorption characterization of the zeolite films on flexible film using atomic layer deposition |
Yoshiharu Mori, Yusuke Noguti, Kensaku Kanomata, Masanori Miura, Bashir A. Arima, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) |
(8) |
16:05-16:30 |
Enhanced efficiency of CdS quantum dot solar cell by photo electrode modification |
Yuya Kibata, Masanori Miura, Kensaku Kanomata, Shigeru Kubota, Fumihiko Hirose, Bashir Ahmmad Arima (Yamagata Univ.) |
(9) |
16:30-16:55 |
Fabrication of FeSxOy thin film by tartaric acid added three-step pulse electrochemical deposition and fabrication of ZnO/FeSxOy heterojunction solar cell |
Wen Ji, Masaya Ichimura (NIT) |
Fri, Nov 30 AM 09:00 - 09:50 |
(10) |
09:00-09:25 |
A 2.5-kV-breakdown-voltage AlGaN-channel HFET with a strain-controlled AlGaInN barrier layer |
Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. of Tech.) |
(11) |
09:25-09:50 |
Effects of annealing ambient on electrical properties of ALD-Al2O3/AlGaN/GaN MIS-HEMTs |
Keita Furuoka, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) |
Fri, Nov 30 AM 09:50 - 11:40 |
(12) |
09:50-10:15 |
Chemical Bath Deposition of Undoped and Li Doped CuO Films and Thier Structural and Electrical Properties |
Hideyuki Okada, Tomoaki Terasako, Kenji Gochoh, Naoya Hayashimoto (Ehime Univ.) |
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10:15-10:25 |
Break ( 10 min. ) |
(13) |
10:25-10:50 |
Chemical Bath Deposition of ZnO Nanorods on GZO Seed Layers and Formation of PEDOT:PSS/ZnO Nanorods Heterojunctions |
Shohei Obara, Tomoaki Terasako, Suguru Namba, Naoto Hshikuni (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Junichi Nomoto, Tetsuya Yamamoto (Kochi Univ. Tech.) |
(14) |
10:50-11:15 |
Fabrication of p-NiO/n-ZnO transparent solar cells by electrochemical deposition |
Miki Koyama, Masaya Ichimura (NIT) |
(15) |
11:15-11:40 |
Fabrication and evaluation of p-type Cu-AlOx thin film by photochemical deposition method |
Masanari Umemura, Masaya Ichimura (Nagoya Inst. Tech.) |
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11:40-12:40 |
Lunch ( 60 min. ) |
Fri, Nov 30 PM 12:40 - 15:25 |
(16) |
12:40-13:05 |
GaN-based verticalcavity surfaceemitting lasers with buried SiO2 optical waveguide structures |
Iida Ryosuke (Meijo Univ.), Natsumi Hayashi, Wataru Muranaga, Syo Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) |
(17) |
13:05-13:30 |
Theoretical and Experimental Studies on Potential Fluctuation in InGaN Quantum-Well Structures |
Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Yuya Kanitani, Shigetaka Tomiya (Sony) |
(18) |
13:30-13:55 |
A new method to evaluate the degree of potential fluctuation in InGaN quantum-well laser diodes by optical-pump stimulated-emission measurements |
Itsuki Oshima, Yuma Ikeda, Shigeta Sakai, A. A. Yamaguchi (Kanazawa Inst. tec.), Yuya Kanitani, Shigetaka Tomiya (Sony) |
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13:55-14:05 |
Break ( 10 min. ) |
(19) |
14:05-14:30 |
Quality improvement and characteristic evaluations of sputter-deposited a-plane AlN on r-plane sapphire |
Ryo Fukuta, Kanako Shojiki, Jiang Nan, Kenjiro Uesugi, Yusuke Hayashi, Xiao Shiyu, Hideto Miyake (Mie Univ.) |
(20) |
14:30-14:55 |
Recent Progress towards realizing GaN/AlGaN Quantum Cascade Lasers |
Ke Wang, Li Wang, Lin Tsung Tse, Hideki Hirayama (RIKEN) |
(21) |
14:55-15:20 |
Formation of holes in GaN by MOVPE for realization of photonic-crystal lasers |
Tomoaki Koizumi, Kei Emoto (Stanley Electric CO., LTD.), Kenji Ishizaki, De Zoysa Menaka, Yochinori Tanaka (Kyoto Univ.), Junichi Sonoda (Stanley Electric CO., LTD.), Susumu Noda (Kyoto Univ.) |
(22) |
15:20-15:25 |
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