Thu, Nov 24 Chair: Yuichi Nakamura (Toyohashi Univ. Technol.)) 10:00 - 11:15 |
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10:00-10:05 |
Opening Address ( 5 min. ) |
(1) |
10:05-10:25 |
Application of Chemical Bath Deposited ZnO Nanorods to UV Light Detectors and Influence of CBD Solution Concentration on Their Device Properties |
Taichi Fujikawa, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Tetsuya Yamamoto (Kochi Univ. Technol.) |
(2) |
10:25-10:45 |
Voltage-Current Characteristics and Optical Responses of PEDOT:PSS/ZnO Nanorods/GZO Heterojunctions |
Tomoaki Terasako (Ehime Univ), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Tetsuya Yamamoto (Kochi Univ. Technol.) |
(3) |
10:45-11:05 |
CVD growth of 2D layered material g-C3N4/SnS2/graphene heterojunction |
Youhei Mori, Kota Matsuoka, Baskar Malathi, Atsushi Nakamura (Shizuoka Univ) |
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11:05-11:15 |
Break ( 10 min. ) |
Thu, Nov 24 AM Chair: Tomoaki Terasako (Ehime University) 11:15 - 14:15 |
(4) |
11:15-11:35 |
Synthesis of g-C3N4/SnS2 composites for artificial photosynthesis application |
Matsuoka Kota, Mori Youhei, Baskar Malathi, Nakamura Atsushi (Shizuoka Univ.) |
(5) |
11:35-11:55 |
Semiconducting properties of electrochemically deposited Ni(OH)2 thin films |
Masahide Shimura, Koji Abe (Nitech) |
(6) |
11:55-12:15 |
Development of haptic gloves for communication |
Ryuhei Takeda, Atsushi Nakamura, Kamen Kanev (Shizuoka Univ.) |
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12:15-13:05 |
Lunch Break ( 50 min. ) |
(7) |
13:05-13:25 |
Al-doped ZnO thin films deposited by sol-gel method |
Koji Abe, Tasuku Kubota (NITech) |
(8) |
13:25-13:45 |
Development of Flexible and Conductive Nanocarbon-based Fibers by Wet Spinning Method |
Hikaru Kondo, Haruka Jin, Rena Kato, Tetsuo Soga, Naoki Kishi (NIT) |
(9) |
13:45-14:05 |
Fabrication of MgSnO thin film using sol-gel method for SnS/MgSnO thin film solar cell |
Kengo Inagaki, Yasushi Takano, Keito Shioda (Shizuoka Univ.) |
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14:05-14:15 |
Break ( 10 min. ) |
Thu, Nov 24 PM Chair: Yoshitsugu Yamamoto (Mitsubishi Elec. Corp. ) 14:15 - 15:45 |
(10) |
14:15-14:35 |
Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy |
Hiroki Imabayashi (Univ. of Fukui), Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara (Sumitomo Chemical Co, Ltd.), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui) |
(11) |
14:35-14:55 |
Evaluation of Fe Induced Trap in GaN HEMTs using Low-Frequency Y22 Measurement |
Taiki Nishida, Toshiyuki Oishi (Saga Univ.), Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Elec. Corp.) |
(12) |
14:55-15:15 |
Fabrication and characterization of AlGaInN/GaN HEMTs on Single-Crystal AlN Substrate |
SakuraTanaka, Tomoyuki Kawaide, Akiyoshi Inoue, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.) |
(13) |
15:15-15:35 |
Study on p-GaInN base layer and quaternary AlGaInN emitter layer for GaN HBTs |
Yusuke Iida, Akira Mase, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi (NITech) |
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15:35-15:45 |
Break ( 10 min. ) |
Thu, Nov 24 PM Chair: Toshiharu Kubo (Nagoya Inst. Technol.) 15:45 - 16:45 |
(14) |
15:45-16:05 |
Estimation of electrical characteristics of surface treatment after recess structure formation in AlGaN/GaN MIS-HEMTs |
Keitaro Toda, Toshiharu Kubo, Takashi Egawa (NITech) |
(15) |
16:05-16:25 |
AlGaN/GaN vertical devices on Si substrate with highly resistive strained layer superlattice |
Takaya Koike, Koki Hayashi, Ryosuke Hayafuji, Toshiharu Kubo, Takashi Egawa (NIT) |
(16) |
16:25-16:45 |
Effects of AlN/AlGaN interfacial control layers in AlN/AlGaN/GaN MIS devices |
Yuchen Deng, Hibiki Anaba, Hideyuki Matsuyama, Toshi-kazu Suzuki (JAIST) |
Fri, Nov 25 Chair: Hideki Hirayama (RIKEN) 10:30 - 13:00 |
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10:30-10:35 |
Awarding Ceremony for 2021 LQE Encouragement Award ( 5 min. ) |
(17) |
10:35-11:05 |
[Encouragement Talk]
Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations |
Keito Mori-Tamamura, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) |
(18) |
11:05-11:25 |
Simulation of exciton dynamics of III-nitrides and experimental analysis
-- Effects of phonons and dependence on temperature -- |
Masaya Chizaki, Kensuke Oki, Yoshihiro Ishitani (Chiba Univ.) |
(19) |
11:25-11:45 |
Growth temperature dependence of semipolar {11-22} AlInN/GaInN |
Takahiro Fujisawa, Taiki Nakabayashi, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.) |
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11:45-13:00 |
Lunch Break ( 75 min. ) |
Fri, Nov 25 PM Chair: Makoto Miyoshi (Nagoya Inst. Technol.) 13:00 - 14:10 |
(20) |
13:00-13:20 |
LED device operation of InGaN-based multiwavelength emission structures fabricated by a thermal reflow method |
Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
(21) |
13:20-13:40 |
Fabrication of AlGaN-based UV-B semiconductor lasers and their device performance |
Ayumu Yabutani, Ryota Hasegawa, Ryosuke kondo, Eri Matsubara (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Yoshito Jin, Tatsuya Matsumoto, Masamitsu Toramaru (JSW), Hironori Torii (JSW afty), Daichi Imai, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Hideto Miyake (Mie Univ.) |
(22) |
13:40-14:00 |
Efficiency Improvement of 230 nm-band AlGaN based LEDs with Al Compositional Graded Layer |
Noritoshi Maeda, Yukio Kashima, Eriko Matsuura (RIKEN), Yasushi Iwaisako (NT), Hideki Hirayama (RIKEN) |
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14:00-14:10 |
Break ( 10 min. ) |
Fri, Nov 25 PM Chair: Atsushi Yamaguchi (Kanazawa Inst. Tecnol.) 14:10 - 15:15 |
(23) |
14:10-14:30 |
Growth and device application of InGaN-based nanocolumn crystals using various crystal planes |
Jumpei Yamada, Ai Mizuno, Rie Togashi, Ichirou Nomura, Katsumi Kishino (Sophia Univ.) |
(24) |
14:30-14:50 |
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(25) |
14:50-15:10 |
Development of Semiconductor Incoherent Light Source for Forward Raman Amplifier |
Junji Yoshida (Furukawa Electric), Naoya Hojo (FFOD), Yasuto Tatamida, Tomohiro Ohisi, Shigehiro Takasaka, Takuya Kokawa, Satoru Ichihara, Ryuichi Sugisaki, Toshio Kimura (Furukawa Electric) |
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15:10-15:15 |
Closing Remarks ( 5 min. ) |