Thu, Nov 28 AM 10:30 - 17:30 |
|
10:30-10:35 |
Opening Address ( 5 min. ) |
(1) |
10:35-11:00 |
High-Power Operation and Applications of InGaN Laser Diode |
Hiroyuki Hagino, Katsuya Samonji, Shinji Yoshida, Shinichi Takigawa, Kiyoshi Morimoto, Toshiyuki Takizawa, Hideki Kasugai, Kazuhiko Yamanaka, Takuma Katayama (Panasonic) |
(2) |
11:00-11:25 |
Texture formation by anisotropic dry etching of m-plane GaN, and light extraction efficiency improvement of textured m-plane GaN LED |
Toshiyuki Fujita, Atsushi Yamada, Akira Inoue, Ryo Kato, Toshiya Yokokawa (Panasonic) |
(3) |
11:25-11:50 |
Study on improvement of the light extraction efficiency in 350-nm-emission UV-LED |
Tsubasa Nakashima, Kenichiro Takeda, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) |
(4) |
11:50-12:15 |
Bow management of substrate for nitride semiconductor devices by internally focused laser processing
-- application to silicon substrate -- |
Natsuko Aota, Hideo Aida, Hidetoshi Takeda (Namiki Precision Jewel) |
|
12:15-13:30 |
Lunch Break ( 75 min. ) |
(5) |
13:30-13:55 |
Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding |
Shota Nishida, Jianbo Liang, Masashi Morimoto, Naoteru Shigekawa (Osaka City Univ.), Manabu Arai (New Japan Radio) |
(6) |
13:55-14:20 |
Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding |
Jianbo Liang (Osaka City Univ.), Shota Nishida, Masashi Morimoto, Naoteru Shigekawa (Osaka City University) |
(7) |
14:20-14:45 |
Investigation on the optimum MQW structure for InGaN/GaN solar cells |
Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) |
(8) |
14:45-15:10 |
Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates |
Kenji Shiojima, Yuhei Kihara, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal) |
(9) |
15:10-15:35 |
AC Operation of Low-Mg-Doped p-GaN Schottky Diodes |
Kenji Shiojima, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal) |
|
15:35-15:50 |
Break ( 15 min. ) |
(10) |
15:50-16:15 |
Quantum Efficiency of p-GaN with NEA surface for high brightness electron source |
Takuya Maekawa, Yoshio Honda, Hiroshi Amano, Tomohiro Nishitani (Nagoya Univ.) |
(11) |
16:15-16:40 |
Study on C doping in GaN and AlGaN by MOVPE |
Yuya Wakasugi, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) |
(12) |
16:40-17:05 |
A novel method for crystallizations of aluminum nitride |
PeiTsen Wu, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
(13) |
17:05-17:30 |
Fabrication of the multi-junction GaInN based solar cells using tunnel junction |
Hironori Kurokawa, Tomomi Goda, Mitsuru Kaga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) |
Fri, Nov 29 AM 09:30 - 17:10 |
(14) |
09:30-09:55 |
OMVPE growth and red luminescence properties of Eu doped GaN/AlGaN multiple quantum well structures |
Takanori Arai, Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) |
(15) |
09:55-10:20 |
Deep-level transient spectroscopy study on defect levels in Eu,Si-codoped GaN grown by organometallic vapor phase epitaxy |
Souichirou Kuwata, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) |
(16) |
10:20-10:45 |
Growth of thick InGaN epilayer by high-pressure MOVPE |
Kouhei Yamashita, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) |
|
10:45-11:00 |
Break ( 15 min. ) |
(17) |
11:00-11:25 |
Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate |
Masayoshi Katagiri, Kenta Izumi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hidehiko Oku, Hidetoshi Asamura, Keisuke Kawamura (Air Water R&D) |
(18) |
11:25-11:50 |
Annealing in N2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE |
Gou Nishio, Shuhei Suzuki, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) |
(19) |
11:50-12:15 |
Control of nucleation for AlN growth on 6H-SiC substrate by low-pressure HVPE |
Shin Kitagawa, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) |
|
12:15-13:30 |
Lunch Break ( 75 min. ) |
(20) |
13:30-13:55 |
Development of Highly-Uniform 270-nm Deep-Ultraviolet Light-Emitting Diodes |
Takuya Mino (Riken/Panasonic), Hideki Hirayama (Riken), Norimichi Noguchi, Takayoshi Takano, Kenji Tsubaki (Riken/Panasonic) |
(21) |
13:55-14:20 |
Realization of high-efficiency deep-UV LED by using transparent p-AlGaN contact layer |
Noritoshi Maeda, Hideki Hirayama (RIKEN) |
(22) |
14:20-14:45 |
Development of AlGaN DUV-LEDs |
Masamichi Ippommatsu, Akira Hirano (UVCR), Hiroshi Amano (Nagoya Univ.), Isamu Akasaki (Meijyo Univ.) |
(23) |
14:45-15:10 |
Growth of Connected Pillar AlN Buffer for AlGaN deep-UV LEDs |
Shiro Toyoda (Saitama Univ./RIKEN), Hideki Hirayama (RIKEN), Norihiko Kamata (Saitama Univ.) |
|
15:10-15:25 |
Break ( 15 min. ) |
(24) |
15:25-15:50 |
Effects of Fabrication Process on Electrical Properties of InAlN MOS structures with ALD-Al2O3 |
Masahito Chiba, Takuma Nakano, Masamichi Akazawa (Hokkaido Univ.) |
(25) |
15:50-16:15 |
Interface properties of n-GaN MIS diodes with laminated ZrO2/Al2O3 films as a gate insulator |
Shintaro Kodama, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) |
(26) |
16:15-16:40 |
Photoelectrode properties of GaN porous structures formed by photo-assisted electrochemical process |
Yusuke Kumazaki, Akio Watanabe, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) |
(27) |
16:40-17:05 |
Evaluation of unwanted radiated emission from GaN-HEMT switching circuit |
Toshihide Ide, Ryousaku Kaji, Mitsuaki Shimizu (AIST), Kenji Mizutani, Hiroaki Ueno, Nobuyuki Otsuka, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) |
|
17:05-17:10 |
Closing Address ( 5 min. ) |