Thu, Nov 21 AM 10:10 - 12:20 |
(1) |
10:10-10:30 |
Investigation of flat thin film growth conditions in ALD growth of ZnO |
Ryo Yamamoto, Hiroto Kano, Atsushi Nakamura, Wataru Inami (Shizuoka Univ.) |
(2) |
10:30-10:50 |
Optical properties of ZnO crystals grown at high temperature on c c-plane sapphire substrates by mist mist-CVD |
Kosei Ohashi, Kenya Fujiwara, Mikihiro Yamamoto, Kazuhiko Hara (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Tetsuya Kouno (Shizuoka Univ.) |
(3) |
10:50-11:10 |
Structural and Photoluminescence Properties of ZnO Nanorods Grown on Various TCO Seed Layers by Chemical Bath Deposition |
Kohdai Hamamoto, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.) |
(4) |
11:10-11:30 |
Chemical Bath Deposition of ZnO Nanorods on Very Thin GZO Seed Layers and Their Structural and Optical Properties |
Tomoaki Terasako, Kohdai Hamamoto, Kenta Yamada, Shinichiro Kohda (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.) |
|
11:30-12:20 |
Lunch Break ( 50 min. ) |
Thu, Nov 21 PM 12:20 - 13:55 |
(5) |
12:20-12:40 |
Photocatalytic properties of ZnO modified by electrochemical treatment |
Koji Abe, Atsuhito Otake (Nitech) |
(6) |
12:40-13:00 |
Load resistance and area dependence in β-Ga2O3 diode RF-DC converter circuit |
Makoto Hashikawa, Kosuke Urata, Takumi Takenohata, Toshiyuki Oishi, Takayoshi Oshima (Saga Univ.) |
(7) |
13:00-13:20 |
Improvement of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure |
Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Aya Shindome, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue (Toshiba) |
(8) |
13:20-13:40 |
Characterization of plasma-induced damage of GaN trench sidewall formed by ICP-RIE |
Shinji Yamada, Hideki Sakurai (Nagoya Univ./ULVAC), Yamato Osada, Toshiyuki Nakamura, Ryuichiro Kamimura (ULVAC), Jun Suda, Tetsu Kachi (Nagoya Univ.) |
|
13:40-13:55 |
Break ( 15 min. ) |
Thu, Nov 21 PM 13:55 - 15:30 |
(9) |
13:55-14:15 |
Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD |
Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) |
(10) |
14:15-14:35 |
Fabrication of GaN-QPM crystal using DP-SAG and evaluation of optical characterization for SHG |
Kai Matsuhisa, Yuto Kobayashi, Hiroki Ishihara, Mako Sugiura, Atsushi Sugita, Yoku Inoue, Takayuki Nakano (Shizuoka Univ.) |
(11) |
14:35-14:55 |
AlGaN-based electron beam excitation UV lasers using AlGaN well layer |
Yusuke Sakuragi, Shinji Yasue, Shohei Teramura, Yuya Ogino, Syunya Tanaka, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Iwamu Akasaki (Meijo University), HIdeto Miyake (Mie University) |
(12) |
14:55-15:15 |
Epitaxial growth of thick AlInN films on GaN and GaInN by MOCVD |
Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.), Tetsuya Takeuchi (Meijo Univ.) |
|
15:15-15:30 |
Break ( 15 min. ) |
Thu, Nov 21 PM 15:30 - 16:10 |
(13) |
15:30-15:50 |
Growth, crystal and optical characterization of quaternary AlGaInN epitaxial films lattice-matched to c-plane GaN |
Hiroki Harada, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.) |
(14) |
15:50-16:10 |
Polarization characteristics in GaN-based vertical cavity surface emitting laser with AlInN/GaN distribution bragg reflectors |
Kaoru Oda, Ryosuke Iida, Sho Iwayama, Kazuki Kiyohara, Tetsuya Takeuci, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) |
Fri, Nov 22 AM 09:40 - 10:55 |
(15) |
09:40-10:00 |
Crystallinity evaluation of tin disulfide thin films by direct sulfidation of evaporated tin films |
Yuki Tamura, Atsushi Nakamura (Shizuoka Univ.) |
(16) |
10:00-10:20 |
Experimental study on the antireflection nanotexture for organic photovoltaics |
Kenta Hiraga, Shigeru Kubota, Kensaku Kanomata, Bashir Ahmmad (Yamagata Univ.), Jun Mizuno (Waseda Univ.), Fumihiko Hirose (Yamagata Univ.) |
(17) |
10:20-10:40 |
Fabricicate of Fe3O4/PU composites fiber mat by electrospinning method |
Takumi Mori, Atsushi Nakamura (Shizuoka Univ.) |
|
10:40-10:55 |
Break ( 15 min. ) |
Fri, Nov 22 AM 10:55 - 11:55 |
(18) |
10:55-11:15 |
Evaluation of electrode surface specificity in pH sensor |
Ryosuke Shinzawa, Atsushi Nakamura (Shizuoka Univ.) |
(19) |
11:15-11:35 |
Production of non-enzymatic glucose sensor |
Takahiro Niwa, Atushi Nakamura (Shizuoka Univ) |
(20) |
11:35-11:55 |
Fabrication of needle-shaped structure for achievement of LED probe to insert brain for optogenetics |
Yusei Nakayama, Hiroki Yasunaga (Toyohashi Tech), Chihiro Inami, Masahiro Ohsawa (Nagoya City Univ.), Hiroto Sekiguchi (Toyohashi Tech/JST PRESTO) |
|
11:55-12:45 |
Lunch Break ( 50 min. ) |
Fri, Nov 22 PM 12:45 - 13:45 |
(21) |
12:45-13:05 |
Progress of UVC-LEDs using DC sputter AlN templates |
Yosuke Mogami (RIKEN/Saitama Univ.), Atsushi Osawa, Kazuto Ozaki, Yukitake Tanioka, Atsushi Maeoka (SCREEN), Yuri Itokazu, Syunsuke Kuwaba (RIKEN/Saitama Univ.), Masafumi Jo, Noritoshi Maeda (RIKEN), Hiroyuki Yaguchi (Saitama Univ.), Hideki Hirayama (RIKEN) |
(22) |
13:05-13:25 |
Fabrication and optical characterization of ultrathin GaN quantum wells on AlN vicinal (0001) planes |
Mitsuru Funato, Hirotsugu Kobayashi, Yoichi Kawakami (Kyoto Univ.) |
(23) |
13:25-13:45 |
Dislocation density dependence of optical gain and internal loss in UV-B region AlGaN active layer |
Shunya Tanaka, Yuta Kawase (Meijo Univ.), Kosuke Sato (Asahi-Kasei/Meijo Univ.), Shinji Yasue, Shohei Teramura, Yuya Ogino (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.), Hideto Miyake (Mie Univ.) |
|
13:45-14:00 |
Break ( 15 min. ) |
Fri, Nov 22 PM 14:00 - 15:00 |
(24) |
14:00-14:20 |
Theoretical and Experimental Studies on Estimation Methods of Mobility Edge in InGaN Quantum Wells |
Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) |
(25) |
14:20-14:40 |
Estimation of Internal Quantum Efficiency in Various InGaN Single Quantum Wells with Different Qualities by Simultaneous Photoacoustic and Photoluminescence Measurements |
Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (SONY) |
(26) |
14:40-15:00 |
Evaluation of III-V nitride by photothermal deflection spectroscopy |
Masatomo Sumiya (NIMS) |