Thu, Jan 26 PM 14:00 - 15:15 |
(1) |
14:00-14:25 |
[Invited Lecture]
GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications |
Tetsuzo Ueda, Yasuhiro Uemoto, Hiroyuki Sakai, Tsuyoshi Tanaka (Panasonic), Daisuke Ueda (Kyoto Insutitute of Tech.) |
(2) |
14:25-14:50 |
[Invited Lecture]
Commercialization of GaN-HEMT for High Frequency Application |
Yasunori Tateno (Sumitomo Electric) |
(3) |
14:50-15:15 |
[Invited Lecture]
Current Status of Millimeter-Wave GaN-HEMTs |
Kozo Makiyama, Yoshitaka Niida, Shiro, Toshihiro Ohki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Youichi Kamata, Kazukiyo Jpshin, Keiji Watanabe (Fujitsu), Yasuyuki Miyamoto (Tokyo Tech.) |
|
15:15-15:25 |
Break ( 10 min. ) |
Thu, Jan 26 PM 15:25 - 16:40 |
(4) |
15:25-15:50 |
[Invited Lecture]
Towards Realization of GaN Vertical Power Devices |
Jun Suda (Kyoto Univ.) |
(5) |
15:50-16:15 |
[Invited Lecture]
Current status and problems of epitaxial wafers for GaN electronic devices |
Yohei Otoki (SCIOCS) |
(6) |
16:15-16:40 |
[Invited Lecture]
Characterization of Metal/GaN Schottky Contacts
-- Review from the Early Days -- |
Kenji Shiojima (Univ. of Fukui) |
Fri, Jan 27 AM 09:30 - 10:20 |
(7) |
09:30-09:55 |
Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes |
Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.) |
(8) |
09:55-10:20 |
Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks |
Kazuto Ohsawa, Shinji Noguchi, Seiko Netsu, Nobukazu Kise, Yasuyuki Miyamoto (Tokyo Tech) |
|
10:20-10:30 |
Break ( 10 min. ) |
Fri, Jan 27 AM 10:30 - 11:45 |
(9) |
10:30-10:55 |
Design of Filtering Antenna with Transmission Zeros Using Cross Coupling Between Antenna and Resonator |
Toshiki Miyazaki, Masataka Ohira, Zhewag Ma, Xiaolong Wang (Saitama Univ.) |
(10) |
10:55-11:20 |
Improved Design Method of Dual-Band Bandpass Filters Using Microstrip Composite Resonators |
Ru Zhang, Zhewang Ma, Masataka Ohira, Xiaolong Wan (Saitama Univ.), Chun-Ping Chen, Tetsuo Anada (Kanagawa Univ.) |
(11) |
11:20-11:45 |
An X-band Low Loss/High Power SPST Switch Using GaN on Si |
Ryota Komaru, Masatake Hangai, Kazuhiko Nakahara, Hiroyuki Okazaki, Koji Yamanaka (Mitsubishi Electric) |
|
11:45-13:00 |
Lunch Break ( 75 min. ) |
Fri, Jan 27 PM 13:00 - 13:50 |
(12) |
13:00-13:25 |
Physical model of GaN HEMT on Si including temperature dependence of RF leakage current in substrates |
Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga univ.) |
(13) |
13:25-13:50 |
Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation |
Toshiyuki Oishi (Saga univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric corp.) |
|
13:50-14:00 |
Break ( 10 min. ) |
Fri, Jan 27 PM 14:00 - 15:15 |
(14) |
14:00-14:25 |
A compact 8.5-10.5 GHz GaN-on-Si MMIC Amplifier for a low cost transmitter |
Jun Kamioka, Masatake Hangai, Kazuhiko Nakahara (Mitsubishi Electric Corp.), Hiroyuki Okazaki (Mitsubishi Electric Corporation), Koji Yamanaka (Mitsubishi Electric Corp.) |
(15) |
14:25-14:50 |
C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network |
Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka (Mitsubishi Electric) |
(16) |
14:50-15:15 |
30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology |
Yoshifumi Kawamura, Masatake Hangai, Tomohiro Mizutani, Kenichi Tomiyama, Koji Yamanaka (Mitsubishi Electric) |