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Technical Committee on Organic Molecular Electronics (OME) [schedule] [select]
Chair Toru Maruno (NTT)
Vice Chair Hiroaki Usui (Tokyo Univ. of Agric. and Tech.)
Secretary Takaaki Manaka (Tokyo Inst. of Tech.), Keizo Kato (Niigata Univ.)
Assistant Jiro Nakamura (NTT)

Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Shigeyoshi Watanabe (Shonan Inst. of Tech.)
Vice Chair Toshihiro Sugii (Fujitsu Microelectronics)
Secretary Hisahiro Anzai (Sony), Tetsuro Endo (Tohoku Univ.)
Assistant Katsunori Onishi (Kyushu Inst. of Tech.), Yukinori Ono (NTT)

Conference Date Fri, Apr 23, 2010 10:10 - 17:20
Topics Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics 
Conference Place Okinawa-Ken-Seinen-Kaikan Bldg. 
Address 2-15-23 Kume, Naha-shi, 900-0033, Japan
Transportation Guide http://www.okinawakenseinenkaikan.or.jp/new/news.php

Fri, Apr 23  
10:10 - 17:20
(1) 10:10-10:40 [Invited Talk]
High Performance Nano System Fabricated by Bio Nano Molecule
-- Low Temperature Crystallization of Silicon Thin Film --
Yukiharu Uraoka, Ichiro Yamashita (NAIST)
(2) 10:40-11:00 Laser-activated Top-gate μc-Si:H TFTs Akito Hara, Jun Shibuya, Tadashi Sato (Tohoku Gakuin Univ.), Kuninori Kitahara (Shimane Univ.)
(3) 11:00-11:20 Film property and carrier transport mechanism of pentacene organic thin-film transistor Akira Heya, Hiroshi Hasegawa, Naoto Matsuo (Univ.Hyogo)
(4) 11:20-11:40 Al-Induced Crystallization of SiGe thin-films on glass and its growth mechanism Naoyuki Kawabata (Kyushu Univ.), Masashi Kurosawa (Kyushu Univ./JSPS Research Fellow), Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.)
(5) 11:40-12:00 Simulation of dependency of photo current on intrinsic length in a-Si and c-Si thin film PIN photo sensor Akinori Sakamoto, Takashi Noguchi (University of the Ryukyus), Tadashi Ohachi (Doushisha University), Fumiaki Oshiro, Jean de Dieu Mugiraneza (University of the Ryukyus)
  12:00-13:00 Break ( 60 min. )
(6) 13:00-13:30 [Invited Talk]
Sputter-deposition of Si films and fabrication of polycrystalline Si thin film transistors
Tadashi Serikawa (Osaka Univ.)
(7) 13:30-13:50 Influence of Grain Size on Gate Voltage Swing and Threshold Voltage of Poly-Si Thin Film Transistor Fumiaki Oshiro, Akinori Sakamoto, Takashi Noguchi (Univ. of Ryukyus), Tadashi Ohachi (Doshisha Univ.)
(8) 13:50-14:10 Characterization of Sputtered-Si Films for Photo-Sensor Diodes Jean de Dieu Mugiraneza, Tomoyuki Miyahira, Akinori Sakamoto, Takashi Noguchi (Univ. of Ryukyus), Ching-Ping Chiu, Meng-Hsin Chen, Wen-Chang Yeh (NTUST)
(9) 14:10-14:40 [Invited Talk]
Microsecond Melting and Crystallization of Silicon Films Induced by Atmospheric Pressure Thermal Plasma Jet Irradiation and Its Application to Thin Film Transistor Fabrication
Seiichiro Higashi (Hiroshima Univ.)
(10) 14:40-15:00 Effect of hydrogen on growth of disk-shaped crystal grain in poly-Si film prepared by excimer laser annealing Akira Heya, Kazufumi Yamada (Univ. Hyogo), Naoya Kawamoto (Yamaguchi Univ.), Naoto Matsuo (Univ. Hyogo)
(11) 15:00-15:20 Crystal Orientation Dependent Growth Features of Ge-on-Insulator by SiGe Mixing Triggered Melting Process Yasuharu Ohta, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.)
(12) 15:20-15:40 Formation of Defect-Free Ge Island on Insulator by Ni-Imprint Induced Si Micro-Seeding Rapid Melting Takashi Sakane, Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.)
  15:40-15:50 Break ( 10 min. )
(13) 15:50-16:20 [Invited Talk]
Optical measurements for invetigating carrier dynamics in the organic thin-film transistors
Takaaki Manaka, Mitsumasa Iwamoto (Tokyo Tech.)
(14) 16:20-16:40 In Situ Observation of Adsorption Process and Functionality of Proteins on Solid/Liquid Interfaces by Time-resolved Slab Optical Waveguide Spectroscopy Naoki Matsuda, Hirotaka Okabe (AIST)
(15) 16:40-17:00 Single-walled Carbon Nanotube Thin Film Transistor Made by Using Solution Process Xun Yi, Hiroaki Ozawa, Gou Nakagawa, Tsuyohiko Fujigaya, Naotoshi Nakashima, Tanemasa Asano (Kyushu Univ.)
(16) 17:00-17:20 Fabrication and characterization of IGZO-channel ferroelectric-gate TFTs with P(VDF-TrFE) film Gwang-Geun Lee (Tokyo Inst. of Tech.), Sung-Min Yoon (ETRI), Joo-Won Yoon (Tokyo Inst. of Tech.), Yoshihisa Fujisaki (Hitachi), Hiroshi Ishiwara, Eisuke Tokumitsu (Tokyo Inst. of Tech.)

Announcement for Speakers
Invited TalkEach speech will have 25 minutes for presentation and 5 minutes for discussion.
General TalkEach speech will have 15 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
OME Technical Committee on Organic Molecular Electronics (OME)   [Latest Schedule]
Contact Address  
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Hisahiro Ansai(Sony)
Tel 046-201-3297 Fax046-202-6572
E--mail: HiAniny 


Last modified: 2010-03-02 22:44:48


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