Wed, Jun 24 PM Plenary session (Room Jungwon) 13:00 - 13:50 |
(1) |
13:00-13:10 |
Opening Remark |
(2) |
13:10-13:50 |
[Keynote] A perspective on silicon industry : challenges and opportunities
S. Y. Choi (Samsung Electronics) |
|
13:50-14:00 |
Break ( 10 min. ) |
Wed, Jun 24 PM Session 1A Power Devices & Circuits (Room Jungwon) 14:00 - 18:00 |
(3) |
14:00-14:30 |
[Invited Talk]
CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband |
Toshihide Suzuki, Yoichi Kawano (Fujitsu/Fujitsu Labs.), Masaru Sato (Fujitsu Labs.), Yasuhiro Nakasha, Tatsuya Hirose (Fujitsu/Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Kazukiyo Joshin (Fujitsu/Fujitsu Labs.) |
(4) |
14:30-15:00 |
[Invited Talk]
Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits |
Shoji Ikeda (Tohoku Univ.), Jun Hayakawa (Hitachi, Ltd.), Huadong Gan, Kotaro Mizumuma, Ji Ho Park (Tohoku Univ.), Hiroyuki Yamamoto, Katsuya Miura (Hitachi, Ltd./Tohoku Univ.), Haruhiro Hasegawa, Ryutaro Sasaki, Toshiyasu Meguro (Tohoku Univ.), Kenchi Ito (Hitachi, Ltd.), Fumihiro Matsukura, Hideo Ohno (Tohoku Univ.) |
(5) |
15:00-15:15 |
Transient characteristic of fabricated Magnetic Tunnel Junction (MTJ) programmed with CMOS circuit |
Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) |
(6) |
15:15-15:30 |
Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits |
Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) |
|
15:30-16:00 |
Break ( 30 min. ) |
(7) |
16:00-16:15 |
Analysis on the Behavior of a Low Voltage Triggered SCR ESD Clamp Circuit in Comparison between the Standard Transmission Line Pulse System and the Very Fast Transmission Line Pulse System. |
Jae-Young Park, Jong-Kyu Song, Dae-Woo Kim, Chang-Soo Jang, Won-Young Jung, Taek-Soo Kim (Dongbu HiTek) |
(8) |
16:15-16:30 |
Current Controlled MOS Current Mode Logic with Auto-detection of Threshold Voltage Fluctuation |
Tetsuo Endoh, Hyoungjun Na (Tohoku Univ.) |
(9) |
16:30-16:45 |
A V-band Injection-Locked Frequency Divider with Low Supply Voltage in 0.13-um Si RFCMOS Technology |
Seung-Woo Seo, Jae-Sung Rieh (Korea Univ.) |
(10) |
16:45-17:00 |
A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies |
Kenichi Abe, Takafumi Fujisawa, Akinobu Teramoto, Syunichi Watabe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
(11) |
17:00-17:15 |
A 0.18um CMOS over 10 Gb/s 10-PAM Serial Link Receiver |
Jeongjun Lee, Jikyung Jeong, Jinwook Burm (Sogang University) |
(12) |
17:15-17:30 |
A CMOS 12.8 Gb/s 10-PAM transmitter for chip-to-chip communication |
Jikyung Jeong, Jeongjun Lee, Jinwook Burm (Sogang University) |
(13) |
17:30-17:45 |
Fundamental study of a composite right/left-handed transmission line with self-multiplexed properties toward functional wireless interconnects |
Sadaharu Ito, Michihiko Suhara (Tokyo Metro Univ.) |
(14) |
17:45-18:00 |
Fabrication of copper pillar tin bump (CPTB) for high density chip interconnect technology
O. C. Chung, J. M. Lee, J. K. Kim, S. J. Hong, I. W. Cho (Myongji Univ.) |
Wed, Jun 24 PM Session 1B Emerging Devices I (Room Namwon) 14:00 - 18:00 |
(15) |
14:00-14:30 |
[Invited Talk]
Metrology of microscopic properties of graphene on SiC |
Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, Hiroshi Yamaguchi (NTT BRL) |
(16) |
14:30-15:00 |
[Invited Talk]
Theoretical study on graphene field-effect transistors |
Eiichi Sano (Hokkaido Univ./JST), Taiichi Otsuji (Tohoku Univ../JST) |
(17) |
15:00-15:30 |
[Invited]
A nanotube and nanowire integrated sensor array for the detection of multiple hazardous gases
J. W. Lee*, K. Y. Dong*, Y. M. Park*, K. S. Lee*, J. Choi*, J. H. Lee*, H. H. Choi**, S. D.
Kim***, E. K. Kim†, B. K. Ju* (*Korea Univ., **Yonsei Univ., ***KETI, †Seoul National Univ. of Technology) |
|
15:30-16:00 |
Break ( 30 min. ) |
(18) |
16:00-16:15 |
Characteristics of organic field-effect-transistor with high dielectric constant layer |
S. Lee, Y. J. Choi, J. Park, K. Y. Ko, I.. S. Park, J. Ahn (Hanyang Univ.) |
(19) |
16:15-16:30 |
Electrical characteristics of OFETs with thin gate dielectric |
Young-uk Song, Shun-ichiro Ohmi, Hiroshi Ishiwara (Tokyo Inst. of Tech.) |
(20) |
16:30-16:45 |
Design of 30nm FinFET with Halo Structure |
Tetsuo Endoh, Koji Sakui, Yukio Yasuda (Tohoku Univ../JST-CREST) |
(21) |
16:45-17:00 |
Design and Simulation of Self-Aligned Vertical Island Single Electron Transistor (VI-SET) with Electrical Tunneling Barrier. |
Joung-eob Lee, Kwon-Chil Kang, Jung-Han Lee, Byung-Gook Park (Seoul National Univ.) |
(22) |
17:00-17:15 |
Simulation and Experiment of Liquid-Phase Microjoining Using Cone-Shaped Compliant Bump |
Lijing Qiu (Kyushu Univ.), Naoya Watanabe (Fukuoka-IST), Tanemasa Asano (Kyushu Univ.) |
(23) |
17:15-17:30 |
A new Combination of RSD and Inside Spacer Thin Film Transistor |
M. J. Chang, T. C. Li, F. T. Chien (Feng Chia Univ.), C. N. Liao, Y. T. Tsai (National Central Univ.) |
(24) |
17:30-17:45 |
Gate-all-around tunnel field-effect transistor (GAA TFET) with vertical channel and n-doped layer
D. S. Lee, H. S. Yang, K. C. Kang, J. E. Lee, J. H. Lee, B. G. Park (Seoul National Univ.) |
(25) |
17:45-18:00 |
A Study on Lateral Surface Treatment of the CdTe X-ray image-sensor |
Jin Kwan Kim (KAIST), Keedong Yang (i3system Conp.), Yong Soo Lee (KAIST), Hee Chul Lee (KAIST/National Nanofab Center) |
Thu, Jun 25 AM Session 2A Compound Semiconductor Devices (Room Jungwon) 08:30 - 13:30 |
(26) |
08:30-09:00 |
[Invited Talk]
Electron Devices Based on GaN and Related Nitride Semiconductors |
Masaaki Kuzuhara (Univ. of Fukui) |
(27) |
09:00-09:30 |
[Invited Talk]
InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility |
Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi, Naoteru Shigekawa (NTT PH Labs.) |
(28) |
09:30-10:00 |
[Invited Talk]
InGaAs/InP MISFET with epitaxially grown source |
Yasuyuki Miyamoto, Toru Kanazawa, Hisashi Saito, Kazuhito Furuya (Tokyo Inst. of Tech.) |
(29) |
10:00-10:30 |
[Invited]
Effect of contact resistance on the performance of a-IGZO thin film transistors
S. Y. Lee (KIST) |
|
10:30-10:45 |
Break ( 15 min. ) |
(30) |
10:45-11:00 |
4H-SiC Avalanche Photodiodes for 280 nm UV Detection. |
B. R. Park, H. Sung, Chun-Hyung Cho (Hongik Univ.), P. M. Sandvik (GE), Ho-Young Cha (Hongik Univ.) |
(31) |
11:00-11:15 |
Interface characterization of Al2O3/n-GaN structure prepared by atomic layer deposition |
Kimihito Ooyama (Hokkaido Univ/Sumitomo Metal Mining), Chihoko Mizue, Yujin Hori, Tamotsu Hashizume (Hokkaido Univ.) |
(32) |
11:15-11:30 |
InP Gunn diodes with shallow-barrier Schottky contacts. |
M. R. Kim, J. K. Rhee, S. D. Lee, Y. S. Chae, S. K. Sharma, A. Kathalingam, C. W. Lee, H. J. Lim (Dongguk Univ.), J. H. Choi, W. J. Kim (Agency for Defense Development) |
(33) |
11:30-11:45 |
Formation and application of InP porous structures on p-n substrates |
Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.) |
(34) |
11:45-12:00 |
A New Bottom-Gated Polysilicon Thin Film Transistors with Polysilicon spacer |
Y. J. Chen, T. C. Li, F. T. Chien (Feng Chia Univ.), C. N. Liao, Y. T. Tsai (National Central Univ.) |
(35) |
12:00-12:15 |
Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network |
Seiya Kasai (Hokkaido Univ./PRESTO JST), Tetsuya Asai, Yuta Shiratori, Daisuke Nakata (Hokkaido Univ.) |
(36) |
12:15-12:30 |
Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector |
Yasuyuki Miyamoto, Shinnosuke Takahashi, Takashi Kobayashi, Hiroyuki Suzuki, Kazuhito Furuya (Tokyo Inst. of Tech.) |
(37) |
12:30-12:45 |
Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission |
Toshihiro Itoh, Kimikazu Sano, Hiroyuki Fukuyama, Koichi Murata (NTT) |
(38) |
12:45-13:00 |
Characteristics of GaN p-n diodes fabricated on a free-standing GaN substrate
T. Uesugi*, N. Soejima*, T. Kachi*, T. Hashizume** (*Toyota Central R&D Labs, **Hokkaido
Univ.) |
(39) |
13:00-13:15 |
Synthesis of small diameter silicon nanowires on SiO2 and Si3N4 surfaces |
J. H. Ahn (Korea University), J. H. Lee, T. W. Koo (Sungkyunkwan Univ/Korea University), M. G. Kang (Korea University), D. M. Whang (Sungkyunkwan Univ/Korea University), S. W. Hwang (Korea University) |
(40) |
13:15-13:30 |
Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN |
Ji-Ho Park, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Yong-Tae Kim (Dankook Univ.), Jonghan Song (KIST), Ho-Jung Chang (Dankook Univ.), Shin-ichiro Sato, Takeshi Ohshima (JAEA, Takasaki) |
Thu, Jun 25 AM Session 2B Silicon & Bio-Devices (Room Namwon) 09:00 - 13:15 |
(41) |
09:00-09:30 |
[Invited Talk]
Novel-Functional Single-Electron Devices Using Silicon Nanodot Array |
Yasuo Takahashi, Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwar, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.) |
(42) |
09:30-10:00 |
[Invited Talk]
MOS Transistors fabricated on Si(551) surface based on radical reaction processes |
Akinobu Teramoto, Weitao Cheng, Chingfoa Tye, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
(43) |
10:00-10:30 |
[Invited]
Dielectrophoresis based cell separation technique for high throughput, purity
J. Y. Park (Sogang Univ.) |
|
10:30-10:45 |
Break ( 15 min. ) |
(44) |
10:45-11:15 |
[Invited]
Transport through DNA molecules and possible applications to future devices
J. S. Hwang*, D. Ahn**, S. W. Hwang* (*Korea Univ., **Univ. of Seoul) |
(45) |
11:15-11:45 |
[Invited]
MEMS for bio-medical applications in Malaysia
B. Y. Majlis (Univ. Kebangsaan Malaysia) |
(46) |
11:45-12:00 |
Effective Annealing for Si film |
Takashi Noguchi, Tomoyuki Miyahira, Yeh Chen, Jean de dieu Mugiraneza (Univ. of Ryukyus) |
(47) |
12:00-12:15 |
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy |
Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemical), Masaaki Higuchi (TOSHIBA), Sigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) |
(48) |
12:15-12:30 |
Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor |
Hideki Murakami, Syed Mahboob, Kiyotaka Katayama, Katsunori Makihara, Mitsuhisa Ikeda, Yumehiro Hata, Akio Kuroda, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) |
(49) |
12:30-12:45 |
Strain effects in van der Pauw (VDP) stress sensor fabricated on (111) silicon in electronic packages |
C. H. Cho, H. Y. Cha (Hongik Univ.) |
(50) |
12:45-13:00 |
Study on Quantum Electro-Dynamics in Vertical MOSFET |
Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST-CREST) |
(51) |
13:00-13:15 |
Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET |
Tetsuo Endoh, Koji Sakui, Yukio Yasuda (Tohoku Univ./JST-CREST) |
Fri, Jun 26 AM Session 3A Emerging Devices II (Room Jungwon) 08:30 - 12:15 |
(52) |
08:30-09:00 |
[Invited]
Solution-processed transparent conductive film and its applications
Y. T. Hong, M. K. Kwon, P. K. Nayak, J. H. Yang (Seoul National Univ.) |
(53) |
09:00-09:30 |
[Invited Talk]
Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor |
Taizoh Sadoh, Takanori Tanaka, Yasuharu Ohta, Kaoru Toko, Masanobu Miyao (Kyushu Univ.) |
(54) |
09:30-10:00 |
[Invited]
Si:Ge alloy nanowire optoelectronics
C. J. Kim, H. S. Lee, K. B. Kang, M. H. Cho (Postech) |
(55) |
10:00-10:30 |
[Invited]
Overview of technology progress in advanced gate stack for CMOS application and its
reliability issues
R. Choi (Inha Univ.) |
|
10:30-10:45 |
Break ( 15 min. ) |
(56) |
10:45-11:15 |
[Invited]
Physical understanding of temperature dependent band gap energies in InAs nanostructures
O. S. Kopylov*†, M. H. Abdellatif†, J. D. Song†, W. J. Choi†, N. K. Cho†, J. I. Lee† (*National
Technical Univ. of Ukraine, †KIST) |
(57) |
11:15-11:30 |
Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots |
Katsunori Makihara, Mitsuhisa Ikeda, Akira Kawanami, Seiichi Miyazaki (Hiroshima Univ.) |
(58) |
11:30-11:45 |
Fabrication of Silicon nanowire FET using transfer technology |
W. H. Kim (Korea Electronics Technology Institute) |
(59) |
11:45-12:00 |
Importance of the Eelectronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot |
Masakazu Muraguchi (Tohoku Univ.), Yukihiro Takada, Shintaro Nomura (Univ. of Tsukuba.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Univ. of Tsukuba.) |
(60) |
12:00-12:15 |
Fabrication of double-dot single-electron transistor in silicon nanowire |
Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.), Yasuo Takahashi (Hokkaido Univ.) |
Fri, Jun 26 AM Session 3B Memory Devices(Room Namwon) 09:00 - 12:00 |
(61) |
09:00-09:30 |
[Invited]
SONOS-type flash memory with thin HfO2 as trapping layer using atomic layer deposition
J. S. Oh*, K. I. Choi*, D. H. Nam*, Y. S. Kim*, M. H. Kang*, M. H. Song*, S. K. Lim*, D. E.
Yoo*, S. S. Park*, J. S. Kim**, Y. C. Park**, H. D. Lee*, G. W. Lee* (*Chungnam National Univ.,
**National Nanofab Center) |
(62) |
09:30-10:00 |
[Invited Talk]
Future High Density Memory with Vertical Structured Device Technology |
Tetsuo Endoh (Tohoku Univ.) |
(63) |
10:00-10:15 |
Multi-level reading method by using PCI(Paierd Cell Interference) in vertical NAND flash memory. |
Yoon Kim, Seongjae Cho, Jang-Gn Yun, Il Han Park, Gil Sung Lee, Doo-Hyun Kim, Dong Hua Li, Se Hwan Park, Wandong Kim, Wonbo Shim, Byung-Gook Park (Seoul National Univ.) |
(64) |
10:15-10:30 |
Architecture and verification of the row chain cell array for polymer random access memory |
Jung ha Kim, Chang yong Ahn, Sang sun Lee (Hanyang Univ.) |
|
10:30-11:00 |
Break ( 30 min. ) |
(65) |
11:00-11:15 |
Enhancement of the programming speed in SANOS nonvolatile memory device designed utilizing Al2O3 and SiO2 stacked tunneling layers. |
H. W. Kim, D. H. Kim, J. H. You, T. W. Kim (Hanyang Univ.) |
(66) |
11:15-11:30 |
Novel Capacitorless DRAM Cell for Low Voltage Operation and Long Data Retention Time |
Woojun Lee, Woo Young Choi (Sogang Univ.) |
(67) |
11:30-11:45 |
Multilevel dual-channel NAND flash memories with high read and program verifying speeds utilizing asymmetrically-doped channel regions |
J. W. Lee, J. H. You, S. H. Jang, K. D. Kwack, T. W. Kim (Hanyang Univ.) |
(68) |
11:45-12:00 |
Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Device. |
Seongjae Cho, Jung Hoon Lee, Yun Kim, Jang-Gn Yun, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) |
Fri, Jun 26 PM Closing Session 12:30 - 13:00 |
(69) |
12:30-13:00 |
Closing Remark |