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Chair |
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Shigeyoshi Watanabe (Shonan Inst. of Tech.) |
Vice Chair |
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Toshihiro Sugii (Fujitsu Microelectronics) |
Secretary |
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Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony) |
Assistant |
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Syunichiro Ohmi (Tokyo Inst. of Tech.) |
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|
Chair |
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Kazuhiro Kudo (Chiba Univ.) |
Vice Chair |
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Toru Maruno (NTT) |
Secretary |
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Takaaki Manaka (Tokyo Inst. of Tech.), Tohru Kubota (NICT) |
Assistant |
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Hiroaki Usui (Tokyo Univ. of Agric. and Tech.) |
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Conference Date |
Fri, Apr 24, 2009 13:30 - 17:30 |
Topics |
TFT Materials, Devices, Applications, Analysis and Others related to SDM and OME activity |
Conference Place |
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Contact Person |
Dr. Naoki Matsuda
+81-942-81-4061 |
Fri, Apr 24 PM 13:30 - 17:30 |
(1) |
13:30-13:55 |
Gas sensor application using organic transistor with gas adsorptive polymeric gate |
Wataru Takashima, Naritoshi Sawada, Keiichi Kaneto (Kyushu Insti. Tech.) |
(2) |
13:55-14:20 |
Solution preparation effect on n-type field-effect-transistor characteristics using PCBM |
Kosuke Hamachi, Takeomi Morita, Shuichi Nagamatsu, Wataru Takashima (Kyushu Inst. of Tech.), Shuishiro Kuwajima (Kyoto Uni.), Keiichi Kaneto (Kyushu Inst. of Tech.) |
(3) |
14:20-14:45 |
New semiconductor compound based on pyrene |
Toshiya Nagase, Sinya Oku, Shuichi Nagamatsu, Wataru Takashima, Tetsuzi Moriguchi, Keiichi Kaneto (Kyusyu Inst. Tech.) |
(4) |
14:45-15:10 |
Electrochemical activity of Polyaniline in high pH solution |
Kazuo Tominaga, Hikaru Hashimoto, Wataru Takashima, Keiichi Kaneto (Kyushu Inst. of Tech.) |
(5) |
15:10-15:35 |
Investigation of SAM treatment on gate insulator in solution processed organic thin-film transistor |
Yoshinori Horii (PRI, AIST/Graduate School of Eng., Tottori Univ.), Mitsuhiro Ikawa, Koichi Sakaguchi, Masayuki Chikamatsu, Yuji Yoshida, Reiko Azumi (PRI, AIST), Hiroshi Mogi (Japan Chemical Innovation Inst./Shin-Etsu Chemical), Masahiko Kitagawa, Hisatoshi Konishi (Graduate School of Eng., Tottori Univ.), Kiyoshi Yase (PRI, AIST) |
(6) |
15:35-16:00 |
Electrocatalytic activity of heme proteins at ITO electrodes |
Yusuke Ayato, Naoki Matsuda (AIST) |
|
16:00-16:15 |
Break ( 15 min. ) |
(7) |
16:15-16:40 |
Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange |
Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) |
(8) |
16:40-17:05 |
Crystallization and annealing of heavily doped p-type Si film and electronic properties |
Takashi Noguchi, Tomoyuki Miyahira (Univ. of the Ryukyus), Toshiharu Suzuki (SEN) |
(9) |
17:05-17:30 |
Metal Induced Lateral Crystallization of PECVD a-Si and Its Impact on TFT Performance |
Shintaro Kanoh, Sho Nagata, Gou Nakagawa, Tanemasa Asano (Kyushu Univ.) |
Contact Address and Latest Schedule Information |
SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
Contact Address |
Shigeru KAWANAKA (Toshiba)
TEL 045-776-5670, FAX 045-776-4104
E- geba |
OME |
Technical Committee on Organic Molecular Electronics (OME) [Latest Schedule]
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Contact Address |
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Last modified: 2013-06-28 23:12:29
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