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Chair |
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Tatsuya Kunikiyo (Renesas) |
Vice Chair |
|
Takahiro Shinada (Tohoku Univ.) |
Secretary |
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Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas) |
Assistant |
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Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY) |
|
|
Chair |
|
Kunio Tsuda (Toshiba) |
Vice Chair |
|
Michihiko Suhara (TMU) |
Secretary |
|
Manabu Arai (New JRC), Masataka Higashiwaki (NICT) |
Assistant |
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Toshiyuki Oishi (Saga Univ.), Tatsuya Iwata (TUT) |
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|
Chair |
|
Fumihiko Hirose (Yamagata Univ.) |
Vice Chair |
|
Mayumi Takeyama (Kitami Inst. of Tech.) |
Secretary |
|
Nobuyuki Iwata (Nihon Univ.), Yuichi Nakamura (Toyohashi Univ. of Tech.) |
Assistant |
|
Yuichi Akage (NTT) |
|
Conference Date |
Thu, May 24, 2018 13:30 - 16:40 |
Topics |
Crystal growth, characterization, and devices (compound semiconductors, Si, SiGe, opto-electrical materials), and others |
Conference Place |
Venture Business Laboratory, Toyohashi Univ. Tech. |
Transportation Guide |
http://www.vbl.tut.ac.jp/ |
Contact Person |
Prof. Tatsuya Iwata, Toyohashi Univ. Tech.
+81-532-44-6718 |
Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on ED, CPM, SDM. |
Thu, May 24 PM 13:30 - 16:40 |
(1) |
13:30-13:55 |
Fabrication and characterization of flexible organic thermoelectric materials |
Naoki Kishi, Satoshi Hibi, Yuta Yoshida, Keisuke Ono, Yuma Sawada, Hiroki Kunieda, Yuya Kondo (NITech) |
(2) |
13:55-14:20 |
Fabrication of Cu-O Thin Films by Galvanostatic Electrochemical Deposition from Weakly Acidic Solutions |
mansoureh keikhaei, Masaya Ichimura (NIT) |
(3) |
14:20-14:45 |
MEMS bio sensor using suspended graphene fabricated by low-pressure dry transfer technique |
Shin Kidane, Hayato Ishida, Kazuaki Sawada (Toyohashi Univ. of Technol.), Kazuhiro Takahashi (Toyohashi Univ. of Technol./JST-PRESTO) |
(4) |
14:45-15:10 |
Growth of high quality InSb channel layer with InxGa1-xSb heteroepitaxial films on Si(111) |
A. A. Mohammad Monzur-Ul-Akhir, Masayuki Mori, Koichi Maezawa (University of Toyama) |
|
15:10-15:25 |
Break ( 15 min. ) |
(5) |
15:25-15:50 |
The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR |
Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida (Sciocs) |
(6) |
15:50-16:15 |
Temperature dependence of hydrogen-related donor in FZ-Silicon |
Akira Kiyoi, Katsumi Nakamura (Mitsubishi Electric Corp.) |
(7) |
16:15-16:40 |
Reduction of threading dislocation density in Ge layers on Si by introducing tunnel-shaped voids |
Motoki Yako (Univ. of Tokyo), Yasuhiko Ishikawa (Toyohashi Univ. of Tech.), Kazumi Wada (Massachusetts Inst. Tech.) |
Announcement for Speakers |
General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
Contact Address and Latest Schedule Information |
SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
Contact Address |
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-: e3 |
ED |
Technical Committee on Electron Devices (ED) [Latest Schedule]
|
Contact Address |
Manabu Arai(New Japan Radio Co.,Ltd)
TEL:+81-049-278-1441 FAX:+81-49-278-1269
E-: injr
Masataka Higashiwaki (NICT)
TEL : +81-42-327-6092 Fax : +81-42-327-5527
E- : m |
CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
|
Contact Address |
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Last modified: 2018-03-17 15:41:11
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