Thu, Jun 7 PM 13:30 - 17:10 |
(1) |
13:30-13:55 |
Analysis of Electron and Hole Trap in MONOS-type Nonvolatile Memory |
Takeshi Ishida, Renichi Yamada, Kazuyoshi Torii (Hitachi), Kenji Shiraishi (Univ. of Tsukuba) |
(2) |
13:55-14:20 |
Electron Trap Characteristics of Si3N4/SRN/Si3N4 stacked films |
Toshiyuki Mine, Takeshi Ishida, Hirotaka Hamamura, Kazuyoshi Torii (Hitachi) |
(3) |
14:20-14:45 |
Measurement Technique of Carrier Mobility in Silicon Nitride and its Application to Data Retention in MONOS Memories |
Kozo Katayama, Kiyoshi Ishikawa (Renesas) |
(4) |
14:45-15:10 |
Depth Profiling of Chemical Composition and Defect State Density of SiNx Formed by Plasma CVD |
Masahi Miura, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Masayuki Kohno, Tatsuo Nishida, Toshio Nakanishi (TEL) |
|
15:10-15:30 |
Break ( 20 min. ) |
(5) |
15:30-15:55 |
Proposal of the mechanism of multi-electron injection into floating gates embeded in SiO2 |
Yukihiro Takada, Masakazu Muraguchi, Kenji Shiraishi (Univ. of Tsukuba) |
(6) |
15:55-16:20 |
Statistical Evaluation of Localized Low Gate Current through Tunnel Dielectric using Integrated Array TEG |
Yuki Kumagai, Akinobu Teramoto, Shigetoshi Sugawa, Tomoyuki Suwa, Tadahiro Ohmi (Tohoku Univ.) |
(7) |
16:20-16:45 |
Workfunction Tuning of B Doped Fully-Silicided Pd2Si Gate |
Hiroyuki Shiraishi, Takuji Hosoi, Akio Ohta, Seiichi Miyazaki, Kentaro Shibahara (Hiroshima Univ.) |
(8) |
16:45-17:10 |
Effects of High-Pressure H2O Vapor annealing on SiO2/4H-SiC Interface Properties and MOSFET Performance |
Hiroshi Yano, Daisuke Takeda, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST) |
|
17:10-17:30 |
Break ( 20 min. ) |
|
17:30-19:00 |
Get-together ( 90 min. ) |
Fri, Jun 8 AM 09:00 - 15:55 |
(9) |
09:00-09:25 |
Study on subnitride and valence band offset at Si3N4 / Si interface formed using nitrogen radicals |
Akinobu Teramoto, Takashi Aratani, Masaaki Higuchi (Tohoku Univ.), Eiji Ikenaga (JASRI), Hiroshi Nohira (Musashi Institute of Technology), Shigetoshi Sugawa, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) |
(10) |
09:25-09:50 |
Effect of Nitrogen Profile and Fluorine Incorporation on Negative-bias Temperature Instability of Ultrathin Plasma-nitrided SiON MOSFETs |
Masayuki Terai, Shinji Fujieda (NEC) |
(11) |
09:50-10:15 |
Modeling of NBTI Degradation for SiON pMOSFET |
Junji Shimokawa, Toshiyuki Enda, Nobutoshi Aoki, Hiroyoshi Tanimoto, Sanae Ito, Yoshiaki Toyoshima (Toshiba) |
|
10:15-10:30 |
Break ( 15 min. ) |
(12) |
10:30-10:55 |
The Effect of Nitrogen Addition into HfSiON on Threshold Voltage Shift |
Chihiro Tamura, Tatsuya Naito (Univ. of Tsukuba), Motoyuki Sato, Seiji Inumiya (Selete), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba) |
(13) |
10:55-11:20 |
Improvement of the electrical properties of La aluminates/Si (100) interface by insertion of one monolayer epitaxial SrSi2 |
Akira Takashima, Yukie Nishikawa, Tatsuo Schimizu, Masamichi Suzuki, Daisuke Matsushita, Masahiko Yoshiki, Mitsuhiro Tomita, Takeshi Yamaguchi, Masato Koyama, Noburu Fukushima (Toshiba) |
(14) |
11:20-11:45 |
Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals |
Soshi Sato, Kiichi Tachi, Jaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) |
|
11:45-12:45 |
Lunch Break ( 60 min. ) |
(15) |
12:45-13:10 |
Annealing atmosphere dependence of effective work function of metal gates on LaAlO3 gate dielectrics. |
Masamichi Suzuki, Yoshinori Tsuchiya, Masato Koyama (Toshiba) |
(16) |
13:10-13:35 |
Electrical Properties of Al2O3 Thin Films Prepared by RF Magnetron Sputtering Method |
Yutaka Nishioka, Shin Kikuchi, Isao Kimura, Takehito Jimbo, Koukou Suu (ULVAC) |
(17) |
13:35-14:00 |
Impact of Interface Reactions on Electrical Characteristics of Ge/High-k Devices |
Koji Kita, Hideyuki Nomura, Sho Suzuki, Toshitake Takahashi, Tomonori Nishimura, Akira Toriumi (Univ.of Tokyo) |
|
14:00-14:15 |
Break ( 15 min. ) |
(18) |
14:15-14:40 |
Evaluation of Thermal Stability of HfO2/SiONx/Ge(100) Stacked Structures using by Photoemission Spectroscopy |
Akio Ohta, Hiroshi Nakagawa, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) |
(19) |
14:40-15:05 |
Formation and characterization of Ge$_3$N$_4$ thin layers |
Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Kiyoshi Yasutake, Heiji Watanabe (Osaka Univ.) |
(20) |
15:05-15:30 |
Characteristics of HfO2/Ge-nitride/Ge MIS structures |
Tatsuro Maeda, Yukinori Morita, Masayasu Nishizawa (AIST), Shinichi Takagi (AIST/Univ. of Tokyo) |
(21) |
15:30-15:55 |
Growth and Characterization of Pr-Oxide-Based Dielectric Films on Ge Substrates |
Mitsuo Sakashita, Nobuyuki Kito (Nagoya Univ.), Akira Sakai (Osaka Univ.), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.) |