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Chair |
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Shunichiro Ohmi (Tokyo Inst. of Tech.) |
Vice Chair |
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Tatsuya Usami (ASM Japan) |
Secretary |
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Tomoyuki Suwa (Tohoku Univ.), Taiji Noda (Panasonic) |
Assistant |
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Takuji Hosoi (Kwansei Gakuin Univ.), Takuya Futase (Western Digital) |
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Conference Date |
Mon, Jun 26, 2023 10:00 - 15:30 |
Topics |
Material Science and Process Technology for MOS Devices, Memories, and Power Devices |
Conference Place |
Research Institute for Nanodevices, Hiroshima University |
Address |
1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527 JAPAN |
Transportation Guide |
https://www.rnbs.hiroshima-u.ac.jp/en/ |
Contact Person |
Takuji Hosoi (Kwansei Gakuin Univ.) |
Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
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Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM. |
Mon, Jun 26 AM 10:00 - 15:30 |
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10:00-10:10 |
Opening & Award Ceremony ( 10 min. ) |
(1) |
10:10-10:50 |
[Memorial Lecture]
Optimum Design of Channel Material and Surface Orientation for Extremely Thin Body nMOSFETs Based on Nonlinear Modeling of Surface Roughness Scattering |
Kei Sumita, Min-Soo Kang, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi (U. Tokyo) |
(2) |
10:50-11:30 |
[Memorial Lecture]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic-MOSFET Operation |
Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) |
(3) |
11:30-11:50 |
Characterization of ultrathin SiO2/SiC interfaces by using self-assembled monolayers |
Ryo Okuhira (Kwansei Gakuin Univ.), Takamasa Kawanago (Tokyo Tech), Takuji Hosoi (Kwansei Gakuin Univ.) |
(4) |
11:50-12:10 |
Impact of SiH4 exposure to Fe-NDs on silicidation reaction |
Haruto Saito, Katsunori Makihara, Shun Tanida, Noriyuki Taoka, Seiichi Miyazaki (Nagoya Univ.) |
(5) |
12:10-12:30 |
Evaluations of Crystalline Structures and Ferroelectricity of Zr/Hf-Multilayer Structures Formed by Thermal Oxidization |
Yunosuke Sano (Nagoya Univ.), Taoka Noriyuki (AIT), Makihara Katsunori (Nagoya Univ.), Ohta Akio (Hukuoka Univ.), Miyazaki Seiichi (Nagoya Univ.) |
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12:30-13:30 |
Lunch Break ( 60 min. ) |
(6) |
13:30-14:10 |
[Invited Lecture]
Pioneering Nondestructive Imaging of Ferroelectric Capacitors by Operando Laser-Based Photoemission Electron Microscopy |
Hirokazu Fujiwara, Yuki Itoya, Masaharu Kobayashi, Cedric Bareille, Shik Shin, Toshiyuki Taniuchi (Univ. of Tokyo) |
(7) |
14:10-14:50 |
[Invited Lecture]
Demonstration of Crystal Phase Junction Transistor |
Katsuhiro Tomioka, Yu Katsumi, Junichi Motohisa (Hokkaido Univ.) |
(8) |
14:50-15:30 |
[Invited Talk]
Atomic-Scale and Real-Time Observation of Solid-Phase Crystallization in Thin Silicon Film using in situ Heating High-Resolution TEM
-- Toward High-Performance Poly-Si Channel -- |
Manabu Tezura, Takanori Asano, Riichiro Takaishi, Mitsuhiro Tomita, Masumi Saitoh, Hiroki Tanaka (Kioxia Corp.) |
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Announcement for Speakers |
General Talk | Each speech will have 15 minutes for presentation and 5 minutes for discussion. |
Memorial Lecture | Each speech will have 35 minutes for presentation and 5 minutes for discussion. |
Invited Lecture | Each speech will have 35 minutes for presentation and 5 minutes for discussion. |
Contact Address and Latest Schedule Information |
SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
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Contact Address |
Takuji HOSOI (Kwansei Gakuin University)
ikni |
Last modified: 2023-04-26 20:21:29
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