Thu, Feb 7 No. 42 10:00 - 16:55 |
|
10:00-10:05 |
Opening Address ( 5 min. ) |
(1) |
10:05-10:45 |
[Invited Talk]
High-precision Dual Damascene Fabrication Technique |
Takashi Hayakawa, Makoto, Syuji Nozawa, Tatsuya Yamaguchi (TEL) |
(2) |
10:45-11:25 |
[Invited Talk]
Half pitch 14 nm direct pattering with Nanoimprint lithography |
Tetsuro Nakasugi (Toshiba Memory) |
(3) |
11:25-12:05 |
[Invited Talk]
Ultrafine 3D Interconnect Technology Using Directed Self-Assembly |
Takafumi Fukushima, Murugesan Mariappan, Mitsumasa Koyanagi (Tohoku Univ.) |
|
12:05-13:10 |
Lunch Break ( 65 min. ) |
(4) |
13:10-13:50 |
[Invited Talk]
Stress Investigation of Annular-Trench-Isolated (ATI) Through Silicon Via (TSV) |
Wei Feng, Naoya Watanabe, Haruo Shimamoto, Masahiro Aoyagi, Katsuya Kikuchi (AIST) |
(5) |
13:50-14:30 |
[Invited Talk]
Grain-Boundary-Crystallinity Dependence of Mechanical Properties and EM Resistance of Electroplated Copper Interconnections |
Yifan Luo, Yutaro Nakoshi, Ryota Mizuno, Ken Suzuki, Hideo Miura (Tohoku Univ.) |
(6) |
14:30-15:10 |
[Invited Talk]
Single Crystal Al Interconnects formed on p-GaN and their Application to GaN FET |
Takeshi Harada, Koji Utaka, Yusuke Kand, Katsuhiko Onishi, Keiichi Matsunaga, Masahiro Hikita, Yasuhiro Uemoto (Panasonic) |
|
15:10-15:30 |
Break ( 20 min. ) |
(7) |
15:30-16:10 |
[Invited Talk]
New contact material for advanced CMOS: cluster-preforming-deposited amorphous Si-rich W silicide film |
Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, Toshihiko Kanayama (AIST) |
(8) |
16:10-16:50 |
[Invited Talk]
Fabrication of substrates with smooth Au surface for bonding at room temperature in atmospheric air |
Takashi Matsumae, Michitaka Yamamoto, Yuichi Kurashima, Eiji Higurashi, Hideki Takagi (AIST) |
|
16:50-16:55 |
Closing Address ( 5 min. ) |