Thu, Nov 6 AM
10:00 - 11:45 |
| |
10:00-10:05 |
Opening Address ( 5 min. ) |
| (1) |
10:05-10:30 |
An Analytical Modeling for Asymmetric Double Gate Tunnel Field Effect Transistor |
Lv Hongfei, Shingo Sato, Yasuhisa Omura (Kansai Univ.), Abhijit Mallik (Univ. Calcutta) |
| (2) |
10:30-10:55 |
Physics-based Analytical Model for Gate-on-Germanium Source (GoGeS) TFET |
Yasuhisa Omura, Shingo Sato (Kansai Univ.), Abhijit Mallik (Univ. Calcutta) |
| (3) |
10:55-11:20 |
Three-dimensional calculation of ion implantation to SiC substrate |
Minoru Okamoto, Mamoru Shimizu, Yasuyuki Ohkura, Ken Yamaguchi, Hideaki Koike (AdvanceSoft) |
| (4) |
11:20-11:45 |
Spice Model of SiC Power MOSFET (DioMOS)
-- Modeling Methodology for Reverse Current-voltage Characteristics of SiC -- |
Tetsuya Yamamoto, Tetsuro Sawai, Nobuyuki Horikawa, Yoshihiko Kanzawa, Kenji Mizutani, Nobuyuki Otsuka, Eiji Fujii (Panasonic) |
| |
11:45-13:00 |
Lunch Break ( 75 min. ) |
Thu, Nov 6 PM
13:00 - 15:30 |
| (5) |
13:00-13:50 |
[Invited Talk]
Device simulation
-- More than 30 years in Toshiba's TCAD -- |
Naoyuki Shigyo (Toshiba) |
| (6) |
13:50-14:40 |
[Invited Talk]
Recent Progress in Electronic Device Materials Design by Computational Physics |
Hiroyuki Kageshima (Shimane Univ.) |
| (7) |
14:40-15:30 |
[Invited Talk]
Modeling and Simulation of Charge-Trapping Memory and Reliability Issues |
Takamitsu Ishihara, Naoki Yasuda, Shosuke Fujii (Toshiba) |
Fri, Nov 7 AM
10:00 - 11:40 |
| (8) |
10:00-10:50 |
[Invited Talk]
SISPAD 2014 Review |
Kenichiro Sonoda (Renesas Electronics) |
| (9) |
10:50-11:15 |
Stress and Doping Impact on Intrinsic Point Defect Behaviour in Growing Single Crystal Silicon |
Koji Sueoka, Eiji Kamiyama, Kozo Nakamura (Okayama Pref. Univ.), Jan Vanhellemont (Ghent Univ.) |
| (10) |
11:15-11:40 |
Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Extracted Using Monte Carlo Method |
Hideaki Tsuchiya, Ryoma Ishida (Kobe Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Matsuto Ogawa (Kobe Univ.) |
| |
11:40-13:00 |
Lunch Break ( 80 min. ) |
Fri, Nov 7 PM
13:00 - 14:40 |
| (11) |
13:00-13:50 |
[Invited Talk]
Statistical analysis of random telegraph noise and its consequence for modeling of oxide traps |
Hiroshi Miki (Hitachi) |
| (12) |
13:50-14:40 |
[Invited Talk]
Interface Engineering for High Mobility Ge MOSFETs: Surface Orientation and Scattering Mechanism |
ChoongHyun Lee, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) |
: Hi
An
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