Tue, Jun 20 PM 13:00 - 17:10 |
(1) |
13:00-13:20 |
[Invited Lecture]
Scintillators and Ga2O3 Semiconductors |
Go Okada, Yuki Usui, Naoki Kawano, Noriaki Kawaguchi, Takayuki Yanagida (NAIST) |
(2) |
13:20-13:40 |
[Invited Lecture]
Development of Quantum Imaging Detector using SOI Technology
-- Looking Elementary Particles and X-rays with Semiconductor -- |
Yasuo Arai (KEK) |
(3) |
13:40-14:00 |
[Invited Lecture]
Studies on semiconducting gas sensors with WO3 nanoparticles for skin-emitted acetone detection |
Yuki Yamada, Satoshi Hiyama (NTT DOCOMO), Hitoshi Tabata (Univ. of Tokyo) |
(4) |
14:00-14:20 |
[Invited Lecture]
Sensing technologies using nitrogen-vacancy centers in diamond |
Takayuki Iwasaki, Mutsuko Hatano (Tokyo Inst. of Tech.) |
|
14:20-14:35 |
Break ( 15 min. ) |
(5) |
14:35-14:55 |
Direct Observation of Chemical Structure and Electrical Dipole at High-k/SiO2 Interface Using by XPS Measurements |
Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) |
(6) |
14:55-15:15 |
Resistive Switching Properties of Si Oxide by Constant Voltage and Constant Current Application |
Akio Ohta, Yusuke Kato, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) |
(7) |
15:15-15:35 |
Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate |
Rumi Takayama, Takuya Hoshii (Tokyo Inst. of Tech.), Akira Nakajima (AIST), Shinichi Nishizawa (Kyushu Univ.), Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui (Tokyo Inst. of Tech.) |
(8) |
15:35-15:55 |
Heavily-doped SOI Substrate and Transfer Printing for Fabrication of TMDC FETs |
Takamasa Kawanago, Ryo Ikoma, Hiroyuki Takagi, Shunri Oda (Tokyo Inst. of Tech.) |
|
15:55-16:10 |
Break ( 15 min. ) |
(9) |
16:10-16:30 |
Low-Carrier-Density Sputtered-MoS2 Film by Vapor-Phase- Sulfurization |
Kentaro Matsuura, Takumi Ohashi, Iriya Muneta (Tokyo Tech), Seiya Ishihara (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech) |
(10) |
16:30-16:50 |
Characterization of defects in Ge1-xSnx gate stack structure |
Yuichi Kaneda, Shinnichi ike, Masayuki Kanematsu, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) |
(11) |
16:50-17:10 |
Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface |
Koichi Ito, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) |