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Chair |
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Tatsuya Kunikiyo (Renesas) |
Vice Chair |
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Takahiro Shinada (Tohoku Univ.) |
Secretary |
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Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas) |
Assistant |
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Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY) |
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Conference Date |
Wed, Oct 25, 2017 14:00 - 17:20
Thu, Oct 26, 2017 09:30 - 14:30 |
Topics |
Process Science and New Process Technology |
Conference Place |
Niche, Tohoku Univ. |
Address |
6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan |
Contact Person |
Rihito Kuroda |
Wed, Oct 25 PM 14:00 - 17:20 |
(1) |
14:00-14:50 |
[Invited Talk]
Zero-step-height planarization: Controlling PMD volume before CMP |
Tomoyasu Kakegawa, Takuya Futase (SanDisk) |
(2) |
14:50-15:20 |
Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process |
Hyeonwoo Park, Rihito Kuroda, Tetsuya Goto, Tomoyuki Suwa, Akinobu Teramoto, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ) |
(3) |
15:20-15:50 |
Si surface atomically flattening process with chemical oxide passivation for Ar/H2 annealing and Hf-based MONOS device application |
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech.) |
|
15:50-16:00 |
Break ( 10 min. ) |
(4) |
16:00-16:30 |
Nanoscale conformal doping technology by spin on diffusion source |
Tetsuro Kinoshita, Shunichi Mashita, Takuya Ohashi, Yoshihiro Sawada, Yohei Kinoshita, Satoshi Fujimura (TOK) |
(5) |
16:30-17:20 |
[Invited Talk]
A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator |
Yasutaka Maeda, Yeyuan Liu, Mizuha Hiroki, Shun-ichiro Ohmi (Tokyo Tech.) |
|
17:20-17:30 |
( 10 min. ) |
Thu, Oct 26 AM 09:30 - 14:30 |
(6) |
09:30-10:20 |
[Invited Talk]
Utilization of Big Data for Innovation in Semiconductor Memory Manufacturing
-- Comprehensive Big-Data-Based Monitoring System for Yield Analysis in Semiconductor Manufacturing -- |
Hiroshi Akahori (Toshiba Memory), Kouta Nakata, Ryohei Orihara, Yoshiaki Mizuoka, Kentaro Takagi (Toshiba), Kenichi Kadota, Takaharu Nishimura, Yukako Tanaka, Hidetaka Eguchi (Toshiba Memory) |
(7) |
10:20-10:50 |
A High Sensitivity Realtime Compact Gas Concentration Sensor using UV absorption spectroscopy and Charge Amplifier Circuit |
Hidekazu Ishii (Tohoku Univ.), Masaaki Nagase, Nobukazu Ikeda (Fujikin Inc.), Yoshinobu Shiba, Yasuyuki Shirai, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) |
(8) |
10:50-11:20 |
Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film |
Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame (NIMS/JST), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) |
|
11:20-13:00 |
Lunch Break ( 100 min. ) |
(9) |
13:00-13:30 |
[Invited Lecture]
High-temperature stable Physical Unclonable Functions with error-free readout scheme based on 28nm SG-MONOS flash memory for security applications |
Takahiro Shimoi, Tomoya Saito, Hirokazu Nagase, Masayuki Izuna, Akihiko Kanda, Takashi Ito, Takashi Kono (Renesas Electronics) |
(10) |
13:30-14:00 |
Pinning Voltage Control of CMOS Image Sensor by measuring sheet resistance at micro test structure in scribe line |
Yotaro Goto (RSMC), Tadasihi Yamaguchi, Masazumi Matsuura (REL), Koji Iizuka (RSMC) |
(11) |
14:00-14:30 |
Analysis of Random Telegraph Noise Behaviors toward Changes of Source Follower Transistor Operation Conditions using High Accuracy Array Test Circuit |
Shinya Ichino, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shunichi Wakashima, Shigetoshi Sugawa (Tohoku Univ.) |
Announcement for Speakers |
General Talk | Each speech will have 25 minutes for presentation and 5 minutes for discussion. |
Contact Address and Latest Schedule Information |
SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
Contact Address |
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-: e3 |
Last modified: 2017-08-22 21:09:07
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