|
Chair |
|
Yuzou Oono (Univ. of Tsukuba) |
Vice Chair |
|
Tatsuya Kunikiyo (Renesas) |
Secretary |
|
Rihito Kuroda (Tohoku Univ.) |
Assistant |
|
Tadashi Yamaguchi (Renesas) |
|
Conference Date |
Thu, Oct 29, 2015 14:00 - 17:20
Fri, Oct 30, 2015 09:30 - 16:00 |
Topics |
Process Science and New Process Technology |
Conference Place |
Niche, Tohoku Univ. |
Address |
6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan |
Contact Person |
Rihito Kuroda, Tohoku University
+81227954833 |
Thu, Oct 29 PM 14:00 - 17:20 |
(1) |
14:00-14:50 |
[Invited Talk]
Current situation and challenging for ion implantation technology |
Yoshiki Nakashima, Nariaki Hamamoto, Shigeki Sakai, Hiroshi Onoda (NIC) |
(2) |
14:50-15:20 |
A study on Si surface flattening process by annealing Ar/H2ambient |
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) |
(3) |
15:20-15:50 |
Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma |
Tomoyuki Suwa, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
|
15:50-16:00 |
Break ( 10 min. ) |
(4) |
16:00-16:30 |
Electrical Properties of MOSFETs Introducing Atomically Flat Gate Insulator/Silicon Interface |
Tetsuya Goto, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ.), Yutaka Kamata, Yuki Kumagai, Katsuhiko Shibusawa (LAPIS Semi. Miyagi) |
(5) |
16:30-17:20 |
[Invited Talk]
Low-power and high-speed FPGA by adjacent integration of flash memory and CMOS logic |
Koichiro Zaitsu, Kosuke Tatsumura, Mari Matsumoto, Masato Oda, Shinichi Yasuda (Toshiba) |
Thu, Oct 29 PM 17:20 - 17:20 |
|
17:50-19:30 |
Banquet ( 100 min. ) |
Fri, Oct 30 AM 09:30 - 11:20 |
(6) |
09:30-10:20 |
[Invited Talk]
Radial line slot antenna microwave plasma source mediated conformal doping of non-planar silicon structures |
Hirokazu Ueda (TEL TDC), Peter Ventzek (TEL America), Masahiro Oka, Yuuki Kobayashi, Yasuhiro Sugimoto, Satoru Kawakami (TEL TDC) |
(7) |
10:20-10:50 |
A Device Simulation Study on Tunneling and Diffusion Current Hybrid MOSFET |
Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Takashi Kojiri, Shigetoshi Sugawa (Tohoku Univ.) |
(8) |
10:50-11:20 |
Ferroelectric BiFeO3 Formation with Oxigen Radical Treatment |
Fuminobu Imaizumi, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.) |
|
11:20-13:00 |
Lunch Break ( 100 min. ) |
Fri, Oct 30 PM 13:00 - 16:00 |
(9) |
13:00-13:50 |
[Invited Talk]
Materials and process technologies for large-area sheet-type display |
Yoshihide Fujisaki (NHK) |
(10) |
13:50-14:20 |
A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator |
Yasutaka Maeda, Yeyuan Liu, Shun-ichiro Ohmi (Tokyo Tech.) |
|
14:20-14:30 |
Break ( 10 min. ) |
(11) |
14:30-15:00 |
Low Work Function LaB6 Thin Films Prepared by Nitrogen Doped LaB6 Target Sputtering |
Hidekazu Ishii (Tohoku Univ), Takahashi Kentarou (Sumitomo Osaka Cement), Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ) |
(12) |
15:00-15:30 |
Investigation of stacked HfN gate insulator formed by ECR plasma sputtering |
Nithi Atthi, Shun-ichiro Ohmi (Tokyo Tech) |
(13) |
15:30-16:00 |
Study of process temperature of Al2O3 atomic layer deposition using high accuracy process gasses supply controller |
Hisaya Sugita, Yasumasa Koda, Tomoyuki Suwa, Rihito Kuroda, Tetsuya Goto, Hidekazu Ishii (Tohoku Univ.), Satoru Yamashita (Fujikin), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
Announcement for Speakers |
General Talk | Each speech will have 25 minutes for presentation and 5 minutes for discussion. |
Invited Talk | Each speech will have 40 minutes for presentation and 10 minutes for discussion. |
Contact Address and Latest Schedule Information |
SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
Contact Address |
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4835
E-: e3 |
Last modified: 2015-08-27 17:09:23
|