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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Shunichiro Ohmi (Tokyo Inst. of Tech.)
Vice Chair Tatsuya Usami (Rapidus)
Secretary Tomoyuki Suwa (Tohoku Univ.), Taiji Noda (Panasonic)
Assistant Takuji Hosoi (Kwansei Gakuin Univ.), Takuya Futase (Western Digital)

Conference Date Thu, Nov 9, 2023 10:25 - 16:45
Fri, Nov 10, 2023 10:30 - 16:20
Topics Process, Device, Circuit simulation, etc. 
Conference Place Hybrid conference 
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
Registration Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM.

Thu, Nov 9 AM 
10:25 - 12:10
  10:25-10:30 Opening Address ( 5 min. )
(1) 10:30-11:20 [Invited Talk]
SISPAD 2023 Review 		Hajime Tanaka (Osaka Univ.)
(2) 11:20-12:10 [Invited Talk]
Current Status and Future Prospects of GaN Vertical Power Devices on GaN substrates 		Jun Suda (Nagoya Univ.)
  12:10-13:10 Lunch Break ( 60 min. )
Thu, Nov 9 PM 
13:10 - 16:45
(3) 13:10-14:00 [Invited Talk]
Overview of advanced logic devices and their enablement process technologies 		Tomonari Yamamoto (TEL)
(4) 14:00-14:50 [Invited Talk]
Quantum Transport Simulation for Analysis of Surface Roughness Scattering in Semiconductor Nanosheet 		Jo Okada, Hajime Tanaka, Nobuya Mori (Osaka Univ.)
  14:50-15:05 Break ( 15 min. )
(5) 15:05-15:55 [Invited Talk]
Superconducting quantum computing: current status and challenges 		Eisuke Abe (RIKEN)
(6) 15:55-16:45 [Invited Talk]
Development of Quantum Device Simulator toward Large-Scale Integration of Silicon Qubits 		Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST)
Fri, Nov 10 AM 
10:30 - 12:10
(7) 10:30-11:20 [Invited Talk]
Simulation of graphene surface plasmon propagation based on tight-binding method and finite-difference time-domain method 		Satofumi Souma, Shota Ogisawa (Kobe Univ)
(8) 11:20-12:10 [Invited Talk]
Self-Consistent Monte Carlo Device Simulation of Capture-Excitation Processes of Carriers 		Futo Hashimoto, Toma Suzuki, Hideki Minari, Nobuya Nakazaki, Jun Komachi (Sony Semiconductor Solutions), Nobuyuki Sano (Univ. of Tsukuba)
  12:10-13:10 Lunch Break ( 60 min. )
Fri, Nov 10 PM 
13:10 - 14:25
(9) 13:10-14:00 [Invited Talk]
Noies Source of MOSFETs Operating at Cryogenic Temperature 		Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST)
(10) 14:00-14:25 Examination of high high-precision device modeling methods
-- Comparison of Neural Networks and Linear Regression -- 		Kengo Nakata, Takayuki Mori, Jiro Ida (Kanazawa Inst. Tech.)
  14:25-14:40 Break ( 15 min. )
Fri, Nov 10 PM 
14:40 - 16:20
(11) 14:40-15:30 [Invited Talk]
Characterization of Physical Properties in GaN under High Electric Field
-- Impact Ionization Coefficients and Critical Electric Field -- 		Takuya Maeda (UTokyo)
(12) 15:30-16:20 [Invited Talk]
DFT study on electronic structure and carrier-transport property of SiC-MOS interface. 		Tomoya Ono (Kobe Univ.)

Announcement for Speakers
Invited TalkEach speech will have 40 minutes for presentation and 10 minutes for discussion.
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Taiji Noda
Panasonic Holdings Corporation
3-1-1 Yagumo-naka-machi, Moriguchi City,
Osaka 570-8501, Japan
Phone: +81-70-2917-5991
e--mail: noda.taiji[atmark]jp.panasonic.com 


Last modified: 2023-10-30 17:57:53


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