Thu, Nov 10 AM
10:00 - 11:45 |
| |
10:00-10:05 |
Opening Talk ( 5 min. ) |
| (1) |
10:05-10:55 |
[Invited Talk]
Equivalent circuit models for MEMS sensors and actuators based on electrical circuit simulator |
Hiroshi Toshiyoshi (Univ. of Tokyo) |
| (2) |
10:55-11:45 |
[Invited Talk]
SISPAD 2011 Review |
Hirokazu Hayashi (Lapis Semi.) |
| |
11:45-13:00 |
Lunch Break ( 75 min. ) |
Thu, Nov 10 PM
13:00 - 15:30 |
| (3) |
13:00-13:50 |
[Invited Talk]
Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking |
Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) |
| (4) |
13:50-14:40 |
[Invited Talk]
Comprehensive Understanding of Random Telegraph Noise with Physics Based Simulation |
Yusuke Higashi, Nobuyuki Momo, Hisayo S. Momose, Tatsuya Ohguro, Kazuya Matsuzawa (Toshiba) |
| (5) |
14:40-15:30 |
[Invited Talk]
Device Simulation of STM Carrier Profiling |
Koichi Fukuda, Masayasu Nishizawa, Tetsuya Tada (AIST), Leonid Bolotov (Tsukuba Univ.), Kaina Suzuki, Shigeo Sato (Fujitsu Semiconductor), Hiroshi Arimoto, Toshihiko Kanayama (AIST) |
Fri, Nov 11 AM
10:00 - 11:40 |
| (6) |
10:00-10:25 |
Simulation of Phonon Transport in Silicon Nanostructures Based on Monte-Carlo Method |
Kentaro Kukita (Osaka Univ.), Yoshinari Kamakura (Osaka Univ./JST) |
| (7) |
10:25-10:50 |
Comparisons of Ballistic Device Performances of Si Nanowire and InAs Nanowire FETs based on First-Principles Band Structure Calculation |
Naoya Takiguchi, Shunsuke Koba, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) |
| (8) |
10:50-11:15 |
Analytical Compact Model Using Perturbation Method for Circuit Simulation of Ballistic and Quasi-ballistic Gate-All-Around MOSFET with Cylindrical Cross Section |
He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Tatsuhiro Numata, Kazuo Nakazato (Nagoya Univ.) |
| (9) |
11:15-11:40 |
Enhancement of current density in asymmetric horn-shaped channel
-- Ensemble Monte-Carlo/Molecular Dynamics Simulation -- |
Takefumi Kamioka (Waseda Univ./JST), Hiroya Imai (Waseda Univ.), Kenji Ohmori, Kenji Shiraishi (Univ. of Tsukuba/JST), Yoshinari Kamakura (Osaka Univ./JST), Takanobu Watanabe (Waseda Univ./JST) |
| |
11:40-13:00 |
Lunch Break ( 80 min. ) |
Fri, Nov 11 PM
13:00 - 15:05 |
| (10) |
13:00-13:50 |
[Invited Talk]
Usages of TCAD simulation on development of semiconductor for vehicles and future ploblems |
Hisashi Ishimabushi, Takashi Ueta, Masaru Nagao, Kimimori Hamada (TMC) |
| (11) |
13:50-14:15 |
Investigation of Scaling Limit Due to Short Channel Effects and Channel Boosting Leakage in Bulk and SOI NAND Flash Memory Cells |
Kousuke Miyaji, Chinglin Hung, Ken Takeuchi (Univ. of Tokyo) |
| (12) |
14:15-14:40 |
Design of a Fully-Parallel High-Density Nonvolatile TCAM Using MTJ Devices |
Akira Katsumata, Shoun Matsunaga, Takahiro Hanyu (Tohoku Univ.) |
| (13) |
14:40-15:05 |
Design Technology of stacked Type Chain PRAM |
Sho Kato, Shigeyoshi Watanabe (SIT) |
| |
15:05-15:20 |
Break ( 15 min. ) |
Fri, Nov 11 PM
15:20 - 17:00 |
| (14) |
15:20-15:45 |
Gate Voltage Dependence of Channel Length Modulation Coefficient for Nanoscale MOSFETs |
Akira Hiroki, Jong Chul Yoon (Kyoto Institute of Tech.) |
| (15) |
15:45-16:10 |
Higher-order Effects of Source and Drain Parasitic Resistances for Nanoscale MOSFETs |
Jong Chul Yoon, Akira Hiroki (Kyoto Institute of Tech.) |
| (16) |
16:10-16:35 |
An Efficient Analysis of Large-Scale RLC Circuits with CMOS Loads |
Yuichi Tanji (Kagawa Univ.) |
| (17) |
16:35-17:00 |
Study of pattern area reduction for standard cell with planar and SGT transistor |
Takahiro Kodama, Shigeyoshi Watanabe (SIT) |
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