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Technical Committee on Component Parts and Materials (CPM)
Chair: Kanji Yasui (Nagaoka Univ. of Tech.) Vice Chair: Yasushi Takemura (Yokohama National Univ.)
Secretary: Naoki Oba (NTT), Satoru Noge (Numazu National College of Tech.)
Assistant: Tadayuki Imai (NTT), Katsuya Abe (Shinshu Univ.)
DATE:
Thu, Oct 29, 2009 14:00 - 17:30
Fri, Oct 30, 2009 09:00 - 11:40
PLACE:
TOPICS:
Process of Thin Film formation and Materials, etc.
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Thu, Oct 29 PM (14:00 - 17:30)
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(1) 14:00 - 14:25
CZTS thin film solar cells by sulfurization
Takuro Seki, Shigeo Igarashi, Yasuyoshi Kando (Shinshu Univ.), Noritaka Momose (Nagano National Coll. of Tech.), Yoshio Hashimoto, Kentaro Ito (Shinshu Univ.)
(2) 14:25 - 14:50
Fabrication and evaluation of silicon solar cells by using low-purity polycrystalline silicon wafers
Yuki Sano, Satoru Tsuzuki, Takuzi Umeta, Yuzuru Narita, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.)
(3) 14:50 - 15:15
Low temperature fabrication of Si TFTs by using organic insulator
Masaki Hashimoto, Takahiko Suzuki, Yuzuru Narita, Fumihiko Hirose (Yamagata Univ.)
(4) 15:15 - 15:40
Low temperature fabrication of NiSi on Si by using Plasma including NiCl
Fumihiko Hirose, Kensaku Kanomata, Yuzuru Narita (Yamagata Univ)
----- Break ( 10 min. ) -----
(5) 15:50 - 16:15
Characterization of CuInO2 thin films grown by RF reactive sputtering
Tsubasa Ogawa, Oki Kuraishi, Yoshitaka Kobayashi, Tomohiko Yamakami, Rinpei Hayashibe, Katsuya Abe (Shinshu Univ.)
(6) 16:15 - 16:40
Fabrication and Characterization of Cold Cathode using Carbon Nanotubes Dispersed in Insulator.
Hirofumi Saito, Tatsuya Hagino, Junnki Matsumoto, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.)
(7) 16:40 - 17:05
Patterning of polyimide/single wall carbon nanotube composites and their field emission properties
Katsuya Ishiyama, Eiji Itoh (Shinshu Univ.)
(8) 17:05 - 17:30
Crystal Growth of C60 Precipitated from Solution by Dipping Method
-- For C60 field effect transistor with high performance and nano-scale by simple synthesis method --
Nobuyuki Iwata, Kouhei Kurihara, Yasunari Iio, Hiroshi Yamamoto (Nihon Univ)
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Fri, Oct 30 AM (09:00 - 11:40)
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(9) 09:00 - 09:25
Structural evaluation of Ge, SiC nanodots formed on Si based on hemispherical-dot model
Tomoyoshi Kuroda, Takashi Otani, Ariyuki Kato, Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.)
(10) 09:25 - 09:50
Lowering of the AZO film resisitivity by hydrogen radical annealing
Yutaka Ohshima, Masami Tahara, Mohd Hanif (Nagaoka Univ. of Tech.), Hironori Katagiri, Kazuo Jinbo (Nagaoka National College of Tech.), Yuichiro Kuroki, Masasuke Takata, Kanji Yasui (Nagaoka Univ. of Tech.)
(11) 09:50 - 10:15
Thermoelectric properties of Si/SiGeB multilayers with ultra-heavily B doping
Akinari Matoba, Kimihiro Sasaki (Kanazawa Univ.)
----- Break ( 10 min. ) -----
(12) 10:25 - 10:50
Investigation of annealing effects on ZrO2 films for gate insulator prepared by limited-reaction sputtering
Naoya Inosaka, Zhou Ying, Kimihiro Sasaki (Kanazawa Univ.)
(13) 10:50 - 11:15
Examination of high speed deposition method for SrAl2O4 thin films by sputtering method
Masakazu Koketsu, Takashi Kuno, Minoru Saito, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Yasuo Fukushima, Kotaro Nagata (Niigata Univ.)
(14) 11:15 - 11:40
Examination of the Mg based alloy thin films by sputtering method
Tomohiro Okada, Takeru Shimizu, Toshiro Tannai, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Yasuo Fukushima, Kotaro Nagata (Niigata Univ)
# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
=== Technical Committee on Component Parts and Materials (CPM) ===
# FUTURE SCHEDULE:
Thu, Nov 19, 2009 - Fri, Nov 20, 2009: Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) [Fri, Sep 18]
Wed, Dec 2, 2009 - Fri, Dec 4, 2009: Kochi City Culture-Plaza [Mon, Sep 14], Topics: Design Gaia 2009 ―New Field of VLSI Design―
Last modified: 2009-08-25 13:07:06
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