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Technical Committee on Component Parts and Materials (CPM)
Chair: Fumihiko Hirose (Yamagata Univ.) Vice Chair: Mayumi Takeyama (Kitami Inst. of Tech.)
Secretary: Nobuyuki Iwata (Nihon Univ.), Yuichi Nakamura (Toyohashi Univ. of Tech.)
Assistant: Yuichi Akage (NTT)
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Technical Committee on Electron Devices (ED)
Chair: Kunio Tsuda (Toshiba) Vice Chair: Michihiko Suhara (TMU)
Secretary: Manabu Arai (New JRC), Masataka Higashiwaki (NICT)
Assistant: Toshiyuki Oishi (Saga Univ.), Tatsuya Iwata (TUT)
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Technical Committee on Silicon Device and Materials (SDM)
Chair: Tatsuya Kunikiyo (Renesas) Vice Chair: Takahiro Shinada (Tohoku Univ.)
Secretary: Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas)
Assistant: Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY)
DATE:
Thu, May 24, 2018 13:30 - 16:40
PLACE:
Venture Business Laboratory, Toyohashi Univ. Tech.(http://www.vbl.tut.ac.jp/. Prof. Tatsuya Iwata, Toyohashi Univ. Tech.+81-532-44-6718)
TOPICS:
Crystal growth, characterization, and devices (compound semiconductors, Si, SiGe, opto-electrical materials), and others
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Thu, May 24 PM (13:30 - 16:40)
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(1) 13:30 - 13:55
Fabrication and characterization of flexible organic thermoelectric materials
Naoki Kishi, Satoshi Hibi, Yuta Yoshida, Keisuke Ono, Yuma Sawada, Hiroki Kunieda, Yuya Kondo (NITech)
(2) 13:55 - 14:20
Fabrication of Cu-O Thin Films by Galvanostatic Electrochemical Deposition from Weakly Acidic Solutions
mansoureh keikhaei, Masaya Ichimura (NIT)
(3) 14:20 - 14:45
MEMS bio sensor using suspended graphene fabricated by low-pressure dry transfer technique
Shin Kidane, Hayato Ishida, Kazuaki Sawada (Toyohashi Univ. of Technol.), Kazuhiro Takahashi (Toyohashi Univ. of Technol./JST-PRESTO)
(4) 14:45 - 15:10
Growth of high quality InSb channel layer with InxGa1-xSb heteroepitaxial films on Si(111)
A. A. Mohammad Monzur-Ul-Akhir, Masayuki Mori, Koichi Maezawa (University of Toyama)
----- Break ( 15 min. ) -----
(5) 15:25 - 15:50
The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR
Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida (Sciocs)
(6) 15:50 - 16:15
Temperature dependence of hydrogen-related donor in FZ-Silicon
Akira Kiyoi, Katsumi Nakamura (Mitsubishi Electric Corp.)
(7) 16:15 - 16:40
Reduction of threading dislocation density in Ge layers on Si by introducing tunnel-shaped voids
Motoki Yako (Univ. of Tokyo), Yasuhiko Ishikawa (Toyohashi Univ. of Tech.), Kazumi Wada (Massachusetts Inst. Tech.)
# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
=== Technical Committee on Component Parts and Materials (CPM) ===
# FUTURE SCHEDULE:
Thu, Aug 9, 2018 - Fri, Aug 10, 2018: Hirosaki Univ. [Mon, Jun 11], Topics: Component Parts and Materials, etc.
Thu, Aug 23, 2018 - Fri, Aug 24, 2018: Otaru Camber of Commerce & Industry [Fri, Jun 15]
=== Technical Committee on Electron Devices (ED) ===
# FUTURE SCHEDULE:
Wed, Aug 8, 2018 (changed): Kikai-Shinko-Kaikan Bldg. [Fri, Jun 15], Topics: Sensor, MEMS, general(※This Technical Committee Conference was canceled as typhoon approach is expected.)
# SECRETARY:
Manabu Arai(New Japan Radio Co.,Ltd)
TEL:+81-049-278-1441 FAX:+81-49-278-1269
E-mail: injr
Masataka Higashiwaki (NICT)
TEL : +81-42-327-6092 Fax : +81-42-327-5527
E-mail : m
=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:
Mon, Jun 25, 2018: Nagoya Univ. VBL3F [Mon, Apr 16], Topics: Material Science and Process Technology for MOS Devices and Memories
Tue, Aug 7, 2018 - Thu, Aug 9, 2018: Hokkaido Univ., Graduate School of IST M Bldg., M151 [Tue, Jun 19], Topics: Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications
# SECRETARY:
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-mail: e3
Last modified: 2018-03-17 15:41:11
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