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Technical Committee on Electron Device (ED)
Chair: Naoki Hara (Fujitsu Labs.) Vice Chair: Koichi Maezawa (Univ. of Toyama)
Secretary: Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.)
Assistant: Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST)

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Technical Committee on Microwaves (MW)
Chair: Futoshi Kuroki (Kure National College of Tech.)
Vice Chair: Takao Kuki (NHK-ES), Masashi Nakatsugawa (NTT), Koji Yamanaka (Mitsubishi Electric)
Secretary: Tadashi Kawai (Univ. of Hyogo), Shingon Yamanouchi (NEC)
Assistant: Takashi Shimizu (Utsunomiya Univ.), Masataka Ohira (Saitama Univ.)

DATE:
Thu, Jan 16, 2014 09:00 - 16:45
Fri, Jan 17, 2014 09:30 - 14:45

PLACE:
Kikai-Shinko Kaikan(3-5-8, Shiba-koen, Minato-ku, Tokyo 105-0011, Japan. http://www.jspmi.or.jp/kaigishitsu/access.html. +81-3-3433-6691)

TOPICS:
Power devices, High-speed and high-frequency devices, Microwave Technologies, etc.

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Thu, Jan 16 AM Special talks by awardees of Microwave Student Contest 2013 (09:00 - 10:40)
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(1) 09:00 - 09:20
[Special Talk]
A Simple Broadband Two-stage Common Source Amplifier Using Stabilization Circuit
Takeshi Kondo, Takeru Sameshima (Saga Univ.)

(2) 09:20 - 09:40
[Special Talk]
FR4-Substrate-Fabricated and Small-Sized Broadband Microwave Amplifier
Takanari Minami, Takashi Ohira (Toyohashi Univ. of Tech.)

(3) 09:40 - 10:00
[Special Talk]
Small-Size Broadband Two-Stage Common Source Amplifier
Tatsuki Matsunaga, Atsushi Maeda, Takeshi Kondo (Saga Univ.)

(4) 10:00 - 10:20
[Special Talk]
Broadband 2-stage amplifier suppressing effects of bias circuit by using resistor
Shuhei Yoshikawa, Toshio Ishizaki (Ryukoku Univ.)

(5) 10:20 - 10:40
[Special Talk]
Broadband two-stage amplifier design based on high-precision modeling of parasitic components for circuit implementation
Yuichi Sawahara, Toshio Ishizaki (Ryukoku Univ.)

----- Break ( 15 min. ) -----

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Thu, Jan 16 AM Regular sessions / ED (10:55 - 12:35)
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(6) 10:55 - 11:20
Novel Millimeter-wave PLL Synthesizer with Cascaded Phase Detectors
Hiroshi Matsumura, Yoichi Kawano, Masaru Sato, Takenori Ohshima, Toshihiro Shimura, Toshihide Suzuki, Yoji Ohashi (Fujitsu), Naoki Hara (Fujitsu Lab.)

(7) 11:20 - 11:45
InGaAs tri-gate MOSFETs with MOVPE regrown source/drain
Toru Kanazawa, Yuichi Mishima, Haruki Kinoshita, Eiji Uehara, Yasuyuki Miyamoto (Tokyo Inst. of Tech.)

(8) 11:45 - 12:10
Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation
Masataka Higashiwaki (NICT), Kohei Sasaki (Tamura/NICT), Man Hoi Wong, Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura), Takekazu Masui (Koha), Shigenobu Yamakoshi (Tamura)

(9) 12:10 - 12:35
Correlation of On-Wafer 400V Dynamic Behavior and Trap Characteristics of GaN-HEMTs
Tadahiro Imada, Toshihide Kikkawa (Fujitsu Labs), Daniel Piedra, Tomas Palacios (Massachusetts Inst. of Tech.)

----- Lunch Break ( 85 min. ) -----

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Thu, Jan 16 PM Regular sessions / MW(1) (14:00 - 15:15)
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(10) 14:00 - 14:25
2D Device Simulation of AlGaN/GaN HFETs Side-Gating Effect
Yusuke Ikawa (Univ. of Tokushima), Keunsam Lee (Nihon Synopsys), Jin-Ping Ao (Univ. of Tokushima), Yasuo Ohno (e-Device)

(11) 14:25 - 14:50
A Dual-Band Reflection Type Phase Shifter Using Active Loads
Yuki Shoji, Kazuyoshi Sakamoto, Yasushi Itoh (Shonan Inst. of Tech.)

(12) 14:50 - 15:15
A Stopband-Tunable Dual-Band Low-Noise Differential Amplifier
Kazuyoshi Sakamoto, Yuki Shoji, Yasushi Itoh (Shonan Inst. of Tech.)

----- Break ( 15 min. ) -----

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Thu, Jan 16 PM Regular sessions / MW(2) (15:30 - 16:45)
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(13) 15:30 - 15:55
Study on electrically coupled resonators for WPT system
Yuichi Sawahara, Toshio Ishizaki (Ryukoku Univ.), Ikuo Awai (Ryutech)

(14) 15:55 - 16:20
209mW 11Gbps 130GHz CMOS Transceiver for Indoor Wireless Communication
Kosuke Katayama, Mizuki Motoyoshi, Kyoya Takano, Chenyan Li, Minoru Fujishima (Hiroshima Univ.)

(15) 16:20 - 16:45
2.4GHz Band Rectenna with The Miniaturized Bridge Rectifier
Kohei Hosodani, Motoki Itoh, Kenji Itoh, Shin-ichi Betsudan, Shigeru Makino, Tetsuo Hirota, Keisuke Noguchi (Kanazawa Inst. of Tech.), Eiji Taniguchi (Mitsubishi Electric)

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Fri, Jan 17 AM Regular sessions / ED(2) & MW(3) (09:30 - 10:45)
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(16) 09:30 - 09:55
Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates
Susumu Yoshimoto, Kuniaki Ishihara, Masaya Okada, Kazuhide Sumiyoshi, Hidenori Hirano, Fuminori Mitsuhashi, Yusuke Yoshizumi, Takashi Ishizuka, Makoto Kiyama, Masaki Ueno (Sumitomo Electric)

(17) 09:55 - 10:20
Blind Nonlinear Comepensation Technique for RF Receiver Front-End
Yuelin Ma, Yasushi Yamao (Univ. of Electro-Comm.)

(18) 10:20 - 10:45
A basic study on RF-DC converter with multi-antennas
Yoichi Yoshida, Koichi Nose (Renesas Electronics)

----- Break ( 15 min. ) -----

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Fri, Jan 17 AM Regular sessions / MW(4) (11:00 - 12:15)
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(19) 11:00 - 11:25
A Linear Array of Transverse Slots without Cross-polarization on a Hollow Rectangular Waveguide in the 120-GHzBand
Duong Nhu Quyen, Makoto Sano, Jiro Hirokawa, Makoto Ando (Tokyo Inst. of Tech.), Jun Takeuchi, Akihiko Hirata (NTT)

(20) 11:25 - 11:50
120-GHz-band 10-Gbit/s Fully-integrated Wireless Equipment using QPSK Transmitter and Receiver based on InP HEMT MMICs
Hiroyuki Takahashi, Jun Takeuchi, Akihiko Hirata (NTT)

(21) 11:50 - 12:15
Dual-channel data transmission over 120-GHz-band wireless link using planar slot array antenna
Jun Takeuchi, Akihiko Hirata (NTT), Jiro Hirokawa (Tokyo Inst. of Tech.)

----- Lunch Break ( 75 min. ) -----

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Fri, Jan 17 PM Regular sessions / MW(5) (13:30 - 14:45)
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(22) 13:30 - 13:55
A design method of the full-waveguide-band MMIC mixer for 90-140 GHz
Hiroshi Hamada, Toshihiko Kosugi, Hideaki Matsuzaki, Hiroki Sugiyama, Hideyuki Nosaka (NTT)

(23) 13:55 - 14:20
Low-Power, Linear Driver Module for InP MZM
Hitoshi Wakita, Munehiko Nagatani, Miwa Mutoh, Satoshi Tsunashima, Hiroyuki Fukuyama, Hideyuki Nosaka, Norihide Kashio, Minoru Ida, Kenji Kurishima (NTT)

(24) 14:20 - 14:45
E-Band Transmitter and Receiver Modules With Simply Reflow-Soldered 3-D WLCSP MMIC's
Koji Tsukashima, Miki Kubota, Osamu Baba, Takeshi Kawasaki, Atsushi Yonamine, Tsuneo Tokumitsu (SEI), Yuichi Hasegawa (SEDI)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is technical co-sponsored by IEEE MTT Society Japan Chapter, IEEE MTT Society Kansai Chapter and IEEE MTT Society Nagoya Chapter.

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Thu, Feb 27, 2014 - Fri, Feb 28, 2014: Hokkaido Univ. Centennial Hall [Wed, Dec 11], Topics: Functional nanodevices and related technologies
Thu, Apr 17, 2014 - Fri, Apr 18, 2014 (tentative): The 100th Anniversary Hall, Yamagata University [Mon, Feb 17], Topics: Organic Devices, Oxide Devices, and others

# SECRETARY:
Tetsuzo Ueda（Panasonic)
TEL：+81-6-6906-4940、FAX：+81-6-6906-2426
E-mail：

Seiya Kasai (Hokkaido Univ.)
TEL : 011-706-6509 Fax : 011-716-6004
E-mail :

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=== Technical Committee on Microwaves (MW) ===
# FUTURE SCHEDULE:

Tue, Mar 4, 2014 - Wed, Mar 5, 2014: Ehime University [Mon, Jan 13], Topics: Microwave Technologies
Thu, Apr 17, 2014 - Fri, Apr 18, 2014: Kikai-Shinko-Kaikan Bldg. [Fri, Feb 7], Topics: Microwave technologies for Wireless Power Transfer, Superconducting Microwave technologies, Microwave technologies, etc.

# SECRETARY:
Takashi Shimizu (Utsunomiya Univ.)
TEL&FAX: +81-28-689-6132
E-mail: t