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=============================================== Technical Committee on Integrated Circuits and Devices (ICD) Chair: Makoto Ikeda (Univ. of Tokyo) Vice Chair: Hayato Wakabayashi (Sony Semiconductor Solutions) Secretary: Yoshiaki Yoshihara (Kioxia), Kosuke Miyaji (Shinshu Univ.) Assistant: Ryo Shirai (Kyoto Univ.), Jun Shiomi (Osaka Univ.), Takeshi Kuboki (Kumamoto Univ.) DATE: Thu, Apr 11, 2024 09:30 - 16:10 Fri, Apr 12, 2024 09:30 - 16:10 PLACE: Kawasaki City Industrial Promotion, Room4, 10F(66-20,Horikawa-cho, Saiwai-ku, Kawasaki, Kanagawa 212-0013. https://kawasaki-sanshinkaikan.jp/) TOPICS: ---------------------------------------- Thu, Apr 11 AM (09:30 - 11:35) ---------------------------------------- (1) 09:30 - 10:20 [Invited Talk] Information retrieval processors with PWM architecture -- Pursuing the ideal of Neumann type computers -- Katsumi Inoue (AOT) (2) 10:20 - 10:45 [Invited Lecture] A 3nm 32.5 TOPS/W, 55.0 TOPS/mm2 and 3.78 Mb/mm2 Fully Digital Computing-in-Memory Supporting INT12 x INT12 with Parallel MAC Architecture HIdehiro Fujiwara (TSMC) (3) 10:45 - 11:10 [Invited Lecture] An SPN Strong PUF with SRAM-based Entropy Source Featuring Both 100-Bit Output Space and Modeling Attack Resilience Kunyang Liu (Kyoto Univ.), Yichen Tang (Lenovo), Shufan Xu, Kiichi Niitsu (Kyoto Univ.), Hirofumi Shinohara (Waseda Univ.) (4) 11:10 - 11:35 A Proposal for Thermal Problems of IC Using Waveguide -- Technology to Combat Thermal Problems Using Electromagnetic Waveguides -- Kazuyuki Ouchi (WDL) ----- Break ( 60 min. ) ----- ---------------------------------------- Thu, Apr 11 PM (13:00 - 14:15) ---------------------------------------- (5) 13:00 - 13:25 NanoBridge Based Nonvolatile Memory Macro for High-temperature Operation Ryusuke Nebashi, Koichiro Okamoto, Toshitsugu Sakamoto, Munehiro Tada (NBS) (6) 13:25 - 13:50 [Invited Lecture] Demonstration of Accelerated STT-Switching and High Retention in a scaled MTJ towards High-Density STT-MRAM Shogo Itai, Masaru Toko, Hideyuki Sugiyama, Chikayoshi Kamata, Rina Takashima, Takeo Koike, Masahiko Nakayama (Kioxia Corporation) (7) 13:50 - 14:15 [Invited Lecture] A 22 nm 10.8 Mb Embedded STT MRAM Macro Achieving over 200 MHz Random Read Access and a 10.4 MB/s Write Throughput for High End MCUs Masayuki Izuna, Tomoya Ogawa, Ken Matsubara, Yasuhiko Taito, Tomoya Saito, Koichi Takeda, Yoshinobu Kaneda, Takahiro Shimoi, Hidenori Mitani, Takashi Ito, Takashi Kono (Renesas Electronics) ----- Break ( 15 min. ) ----- ---------------------------------------- Thu, Apr 11 PM (14:30 - 16:10) ---------------------------------------- (8) 14:30 - 14:55 [Invited Lecture] A 40 nm 2 kb MTJ-Based Non-Volatile SRAM Macro with Novel Data-Aware Store Architecture for Normally Off Computing Kenta Suzuki, Keizo Hiraga, Bessho Kazuhiro (Sony), Kimiyoshi Usami (SIT), Taku Umebayashi (Sony) (9) 14:55 - 15:45 [Invited Talk] A818-4094TOPS/W Capacitor-Reconfigured CIM Macro for Unified Acceleration of CNNs and Transformers Kentaro Yoshioka (Keio) (10) 15:45 - 16:10 [Invited Lecture] SONOS Embedded Flash IP Using Trap-Depth-Controlled SiN Film Enabling Data Retention more than 10 years at 200C Shoji Yoshida, Yashuhiro Taniguchi (Floadia) ---------------------------------------- Fri, Apr 12 AM (09:30 - 11:35) ---------------------------------------- (11) 09:30 - 10:20 [Invited Talk] High Density Dynamic Flash Memory (DFM) Koji Sakui (Unisantis) (12) 10:20 - 10:45 [Invited Lecture] Low Power and Thermal Throttling-less SSD with In-Package Boost Converter for 1000-WL Layer 3D Flash Memory Kazuma Hasegawa, Yuta Aiba, Xu Li, Hitomi Tanaka, Takayuki Miyazaki, Tomoya Sanuki (KIC) (13) 10:45 - 11:35 [Invited Talk] Recent Developments and Challenges for NAND Flash Memory Interface Takashi Toi (KIOXIA) ----- Break ( 60 min. ) ----- ---------------------------------------- Fri, Apr 12 PM (13:00 - 14:30) ---------------------------------------- (14) 13:00 - 13:25 [Invited Lecture] A 1Tb Density 3bits/Cell 3D-NAND Flash on a 2YY Tiers Technology with 300MB/s Write Throughput Koichi Kawai, Hidehiko Kuge (Micron) (15) 13:25 - 13:50 [Invited Lecture] 5-Bit/2Cell(X2.5), 7-Bit/2Cell(X3.5), 9-Bit/2Cell(X4.5) NAND Flash Memory: Half Bit technology Noboru Shibata, Hironori Uchikawa, Taira Shibuya, Kenri Nakai, Kosuke Yanagidaira, Kosuke Yanagidaira (KIOXIA) (16) 13:50 - 14:15 [Invited Lecture] Development of a Bridge Chip for Scalable Performance and Capacity Storage Systems Shinichi Ikeda, Akira Iwata, Goichi Otomo, Tomoaki Suzuki, Hiroaki Iijima, Mikio Shiraishi, Shinya Kawakami, Masatomo Eimitsu, Yoshiki Matsuoka, Kiyohito Sato, Shigehiro Tsuchiya, Yoshinori Shigeta, Takuma Aoyama (Kioxia) ----- Break ( 15 min. ) ----- ---------------------------------------- Fri, Apr 12 PM (14:30 - 16:10) ---------------------------------------- (17) 14:30 - 14:55 [Invited Lecture] A bi-stable 1-transistor SRAM and a boosted transistor having intrinsic open-base BJT Yuniarto Widjaja, Christopher Norwood, Kuk-Hwan Kim (Zeno Semiconductor, Inc.) (18) 14:55 - 15:20 [Invited Lecture] 遠端ビット線プリチャージとウィークビットトラッキング回路を用いて0.48 - 1.2V動作電圧範囲と27.6Mbit/mm^2の高集積密度を実現する3ナノメートルSRAM Yumito Aoyagi, Makoto Yabuuchi, Tomotaka Tanaka, Yuichiro Ishii, Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Isabel Wang, Yu-Hao Hsu, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang (TSMC) (19) 15:20 - 15:45 [Invited Lecture] 3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM with 0.5V-1.4V Wide Voltage Range Operation in 3nm FinFET for HPC Applications Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Jhon-Jhy Liaw, Shien-Yang Michael Wu, Quincy Li, Hidehiro Fujiwara, Hung-Jen Liao, Tsung-Yung Jonathan Chang (TSMC) (20) 15:45 - 16:10 [Invited Lecture] A 3nm-FinFET 4.3 GHz 21.1 Mb/mm2 Double-Pumping 1-Read and 1-Write Pseudo-2-Port SRAM with a Folded-Bitline Multi-Bank Architecture Masaru Haraguchi, Yorinobu Fujino, Yoshisato Yokoyama, Ming-Hung Chang, Yu-Hao Hsu, Hong-Chen Cheng, Koji Nii, Yih Wang, Tsung-Yung Jonathan Chang (TSMC) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. Invited Lecture will have 20 minutes for presentation and 5 minutes for discussion. Invited Talk will have 45 minutes for presentation and 5 minutes for discussion. Keynote Address will have 55 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is co-sponsored by IEEE SSCS Japan Chapter and IEEE SSCS Kansai Chapter. === Technical Committee on Integrated Circuits and Devices (ICD) === # FUTURE SCHEDULE: Thu, May 9, 2024 - Fri, May 10, 2024: [Fri, Apr 19] # SECRETARY: Takeshi Kuboki (Kumamoto University) E-mail:  bo  ieee Last modified: 2024-04-11 10:58:34 |
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