ken-system: Advance Program

IEICE Technical Committee Submission System
Advance Program

Online Proceedings
[Sign in]
Tech. Rep. Archives

===============================================
Technical Committee on Integrated Circuits and Devices (ICD)
Chair: Akira Matsuzawa (Tokyo Inst. of Tech.) Vice Chair: Kunio Uchiyama (Hitachi)
Secretary: Makoto Nagata (Kobe Univ.), Minoru Fujishima (Univ. of Tokyo)
Assistant: Yoshio Hirose (Fujitsu Labs.), Hiroaki Suzuki (Renesas)

DATE:
Mon, Apr 13, 2009 12:40 - 18:00
Tue, Apr 14, 2009 10:15 - 16:15

PLACE:
Daikanso(10-76 Inuta Matsushima, Matsushima machi, Miyagi-gun, Miyagi. http://www.taikanso.co.jp/eg/. Masanori Hariyama, Tohoku Univ.022‐354‐2161 (Hotel))

TOPICS:
Semiconductor Memory Technologies

----- Opening Address ( 10 min. ) -----

----------------------------------------
Mon, Apr 13 PM (12:40 - 15:20)
----------------------------------------

(1) 12:40 - 13:30
[Invited Talk]
A 1.6GB/s DDR2 128Mb Chain FeRAM with Scalable Octal Bitline and Sensing Schemes
Hidehiro Shiga, Daisaburo Takashima, Shinichiro Shiratake, Katsuhiko Hoya, Tadashi Miyakawa, Ryu Ogiwara, Ryo Fukuda, Ryosuke Takizawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, Yasushi Nagadomi, Daisuke Hashimoto, Hisaaki Nishimura, Takeshi Hioka, Sumiko Dohmae (Toshiba Corp.)

(2) 13:30 - 14:20
[Invited Talk]
Trend in Multi-Gigabit DRAM Technology and Low-Vt Small-Offset Gated Preamplifier for Sub-1-V Arrays
Satoru Akiyama, Tomonori Sekiguchi, Riichiro Takemura, Akira Kotabe, Kiyoo Itoh (Hitachi, Ltd.,)

----- Break ( 10 min. ) -----

(3) 14:30 - 15:20
[Invited Talk]
MRAM technology trend and evolution, 32Mb MRAM development
Tadahiko Sugibayashi, Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Shinsaku Saito (NEC), Yuichi Ito (NECEL), Sadahiko Miura, Yuko Kato, Kaoru Mori (NEC), Yasuaki Ozaki, Yosuke Kobayashi (NECEL), Norikazu Ohshima, Keizo Kinoshita, Tetsuhiro Suzuki, Kiyokazu Nagahara (NEC)

----- Break ( 20 min. ) -----

----------------------------------------
Mon, Apr 13 PM (15:40 - 18:00)
----------------------------------------

(4) 15:40 - 18:00
[Panel Discussion]
Which memory technology win win the low-VDD race in SoC?
Hideto Hidaka (Renesas Tech.), Masanao Yamaoka (Hitachi, Ltd.), Shinji Miyano (Toshiba Corp.), Satoru Akiyama (Hitachi, Ltd.), Tadahiko Sugibayashi (NEC), Syoichiro Kawashima (Fujitsu Limited), Masataka Osaka (Panasonic)

----------------------------------------
Tue, Apr 14 AM (10:15 - 11:30)
----------------------------------------

(5) 10:15 - 10:40
A Process-Variation-Tolerant Dual-Power-Supply SRAM with 0.179μm2 Cell in 40nm CMOS Using Level-Programmable Wordline Driver
Yuki Fujimura, Osamu Hirabayashi, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Keiichi Kushida, Takahiko Sasaki, Akira Katayama, Gou Fukano, Takaaki Nakazato, Yasushi Shizuki, Natsuki Kushiyama, Tomoaki Yabe (Toshiba Co.)

(6) 10:40 - 11:05
A 0.56-V 128kb 10T SRAM Using Column Line Assist (CLA) Scheme
Shusuke Yoshimoto, Yusuke Iguchi, Shunsuke Okumura, Hidehiro Fujiwara, Hiroki Noguchi (Kobe Univ.), Koji Nii (Renesas Technology Corp.), Hiroshi Kawaguchi, Masahiko Yoshimoto (Kobe Univ.)

(7) 11:05 - 11:30
A 7T/14T Dependable SRAM and Its Array Structure to Avoid Half Selection
Shunsuke Okumura, Hidehiro Fujiwara, Yusuke Iguchi, Hiroki Noguchi, Hiroshi Kawaguchi (Kobe Univ.), Masahiko Yoshimoto (Kobe Univ./JST-CREST)

----- Lunch Break ( 90 min. ) -----

----------------------------------------
Tue, Apr 14 PM (13:00 - 14:15)
----------------------------------------

(8) 13:00 - 13:50
[Invited Talk]
A 113mm2 32Gb 3bit/Cell NAND Flash Memory and Recent Technology Trend of NAND Flash Memory
Takuya Futatsuyama, Norihiro Fujita, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro (Toshiba Corp.), Teruhiko Kamei, Hiroaki Nasu (SanDisk), Makoto Iwai, Koji Kato, Yasuyuki Fukuda, Naoaki Kanagawa, Naofumi Abiko (Toshiba Corp.), Masahide Matsumoto (SanDisk), Toshihiko Himeno, Toshifumi Hashimoto (Toshiba Corp.)

(9) 13:50 - 14:15
A 7.8MB/s 64Gb 4bit/Cell NAND Flash Memory in 43nm CMOS
Mitsuaki Honma (Toshiba Corp.), Cuong Trinh (SanDisk Corp.), Noboru Shibata, Takeshi Nakai, Mikio Ogawa, Junpei Sato, Yoshikazu Takeyama, Katsuaki Isobe (Toshiba Corp.), Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei (SanDisk Corp.), Kiyoaki Iwasa (Toshiba Corp.)

----- Break ( 20 min. ) -----

----------------------------------------
Tue, Apr 14 PM (14:35 - 16:15)
----------------------------------------

(10) 14:35 - 15:25
[Invited Talk]
A 1.8V 30nJ Adaptive Program-Voltage (20V) Generator for 3D-Integrated NAND Flash SSD
Tadashi Yasufuku, Koichi Ishida (Tokyo Univ.), Shinji Miyamoto, Hiroto Nakai (Toshiba), Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi (Tokyo Univ.)

(11) 15:25 - 15:50
Reading method of NAND type 1-transistor FeRAM with pulse input
Koichi Sugano, Shigeyoshi Watanabe (Shonan Inst. of Tech.)

(12) 15:50 - 16:15
Study for Design Technology of stacked NAND type MRAM using spin transistor
Shouto Tamai, Shigeyoshi Watanabe (Shonan Inst. of Tech.)

----- Closing Address ( 5 min. ) -----

=== Technical Committee on Integrated Circuits and Devices (ICD) ===
# FUTURE SCHEDULE:

Mon, May 18, 2009 - Wed, May 20, 2009: [Mon, Mar 9]
Thu, Jul 16, 2009 - Fri, Jul 17, 2009: Tokyo Institute of Technology [Wed, May 13], Topics: Low voltage/low power techniques, novel devices, circuits, and applications
Thu, Jul 23, 2009: Tokyo Tech Front [Mon, Jun 22], Topics: Technical Meeting on Silicon Analog RF Technologies

# SECRETARY:
Hiroaki Suzuki (Renesas Technology Corp.)
TEL 072-787-2338
E-mail: