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=============================================== Technical Committee on Electron Device (ED) Chair: Tetsu Kachi (Toyota Central R&D Labs.) Vice Chair: Naoki Hara (Fujitsu Labs.) Secretary: Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.) Assistant: Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.) =============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Tetsuro Endo (Tohoku Univ.) Vice Chair: Yasuo Nara (Fujitsu Semiconductor) Secretary: Yukinori Ono (NTT), Shintaro Nomura (Univ. of Tsukuba) Assistant: Yoshitaka Sasago (Hitachi) DATE: Tue, Feb 7, 2012 13:30 - 17:20 Wed, Feb 8, 2012 09:30 - 14:40 PLACE: Centennial Memorial Hall, Hokkaido University(North 8, West9, Sapporo-shi, 060-0808, Japan. 10 min walk from JR Hokkaido Sapporo station. http://www.hokudai.ac.jp/en/documents/guide_english_2.pdf. Dr. Seiya Kasai. +81-11-706-6509) TOPICS: ---------------------------------------- Tue, Feb 7 PM (13:30 - 17:20) ---------------------------------------- (1) 13:30 - 14:10 [Invited Talk] Deterministic-doped Silicon Devices and Their Quantum Transport Takahiro Shinada, Masahiro Hori (Waseda Univ.), Filipo Guagliardo (Politecnico di Milano), Yukinori Ono (NTT), Kuninori Kumagai, Takashi Tanii (Waseda Univ.), Enrico Prati (CNR) (2) 14:10 - 14:35 Ab initio Analysis of Electronic States for Single Phosphorus Dopants in Silicon Nanorod Transistors Youhei Kuzuya, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.), Hiroshi Mizuta (JAIST/Univ. of Southampton) (3) 14:35 - 15:00 KFM observation of individual dopant potentials and electron charging Roland Nowak, Miftahul Anwar, Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) ----- Break ( 15 min. ) ----- (4) 15:15 - 15:40 High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita (Hokkaido Uni.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Uni.) (5) 15:40 - 16:05 High-frequency characterization of InAs nanowire MISFETs Tatsuro Watanabe, Yutaka Otsuhata, Takao Waho (Sophia Univ.), Kai Blekker, Werner Prost, Franz-Josef Tegude (Univ. of Duisburg-Essen) (6) 16:05 - 16:30 Possibility of High Order Harmonic Oscillators Based on Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs Jie Pan, Kazuki Hayano, Masayuki Mori, Koichi Maezawa (Univ. Toyama) (7) 16:30 - 16:55 Gain enhancement in graphene terahertz amplifier with resonant structure Yuya Takatsuka, Kazuhiro Takahagi, Eiichi Sano (Hokkaido Univ.), Victor Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.) (8) 16:55 - 17:20 Light emission from Silicon quantum-well by tunneling current injection Jinichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Akira Fujiwara (NTT BRL) ---------------------------------------- Wed, Feb 8 AM (09:30 - 14:40) ---------------------------------------- (9) 09:30 - 09:55 Observation of Conductance Quantization during SPM Scratching Ryutaro Suda, Takahiro Ohyama, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech) (10) 09:55 - 10:20 Simultaneous Control of Series-Connected Nanogaps by Field-Emission-Induced Electromigration Mitsuki Ito, Shunsuke Akimoto, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) (11) 10:20 - 10:45 Electrical characteristics of MgF_(2)/Fe/MgF_(2) thin films Takuma Ishikawa, Eita Sato, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ----- Break ( 15 min. ) ----- (12) 11:00 - 11:25 Seebeck Coefficient of Ultrathin Si with Fermi Energy Controlled by External Bias Faiz Salleh, Kazutoshi Miwa, Hiroya Ikeda (Shizuoka Univ.) (13) 11:25 - 11:50 Stochastic resonance using a steep-subthreshold-swing transistor Katsuhiko Nishiguchi, Akira Fujiwara (NTT) ----- Lunch Break ( 70 min. ) ----- (14) 13:00 - 13:25 The Luttinger-liquid behavior in single-walled carbon nanotube networks Tomo Tanaka, Ken-ichiro Mori, Eiichi Sano, Bunshi Fugetsu, Hongwen Yu (Hokkaido Univ.) (15) 13:25 - 13:50 Charge distribution near interface of high-k gate insulator in CNFETs Kosuke Suzuki, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) (16) 13:50 - 14:15 Characterization and Analysis of Low-Frequency Noise in SiN Insulator-Gate GaAs Etched Nanowire FETs Toru Muramatsu, Seiya Kasai, Zenji Yatabe (Hokkaido Univ.) (17) 14:15 - 14:40 Study on nonlinear transfer characteristics in a GaAs three-branch nanowire junction device using a light-induced local conductance modulation method Masaki Sato, Toru Muramatsu, Seiya Kasai (Hokkaido Univ.) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. Invited Talk will have 35 minutes for presentation and 5 minutes for discussion. === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Wed, Apr 18, 2012 - Thu, Apr 19, 2012: Yamagata University [Wed, Feb 15], Topics: TFT(organic matters, oxides), others Thu, May 17, 2012 - Fri, May 18, 2012: VBL, Toyohashi Univ. of Technol. [Wed, Mar 14] # SECRETARY: Kunio Tsuda（Toshiba） TEL : +81-44-549-2142、FAX : +81-44-520-1501 E-mail :   o      ba Michihiko Suhara (Tokyo Metropolitan Univ.) TEL : +81-42-677-2765 Fax : +81-42-677-2756 E-mail :        t  Tetsuzo Ueda（Panasonic) TEL：+81-75-956-8273、FAX：+81-75-956-9110 E-mail：   zo pa  c Seiya Kasai（Hokkaido Univ.) TEL：+81-11-706-6509、FAX：+81-11-716-6004 E-mail：   irciqe i=== Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Mon, Mar 5, 2012: Kikai-Shinko-Kaikan Bldg. , Topics: Wiring and Assembly Technology, etc Fri, Apr 27, 2012 - Sat, Apr 28, 2012: Okinawa-Ken-Seinen-Kaikan Bldg. [Fri, Feb 10], Topics: Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics Thu, May 17, 2012 - Fri, May 18, 2012: VBL, Toyohashi Univ. of Technol. [Wed, Mar 14] # SECRETARY: Yukinori Ono(NTT) Tel 046-240-2641 Fax 046-240-4317 E-mail: o       Last modified: 2011-11-18 16:39:33 |
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