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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Shunichiro Ohmi (Tokyo Inst. of Tech.) Vice Chair: Tatsuya Usami (Rapidus) Secretary: Tomoyuki Suwa (Tohoku Univ.), Taiji Noda (Panasonic) Assistant: Takuji Hosoi (Kwansei Gakuin Univ.), Takuya Futase (Western Digital) =============================================== Technical Committee on Integrated Circuits and Devices (ICD) Chair: Makoto Ikeda (Univ. of Tokyo) Vice Chair: Hayato Wakabayashi (Sony Semiconductor Solutions) Secretary: Yoshiaki Yoshihara (Kioxia), Kosuke Miyaji (Shinshu Univ.) Assistant: Ryo Shirai (Kyoto Univ.), Jun Shiomi (Osaka Univ.), Takeshi Kuboki (Sony Semiconductor Solutions) =============================================== Technical Group on Information Sensing Technologies (ITE-IST) Chair: Masayuki Ikebe (Hokkaido Univ.) Vice Chair: Takashi Komuro (Saitama Univ.), Kazuhiro Shimonomura (Ritsmeikan Univ.), Keiichiro Kagawa (Shizuoka Univ.) Secretary: Takashi Tokuda (Tokyo Inst. of Tech.), Rihito Kuroda (Tohoku Univ.), Kazuya Kitamura (NHK), Yuichiro Yamashita (TSMC), Shunsuke Okura (Ritsumeikan Univ.), Yoshiaki Takemoto (MEMS CORE) Assistant: Junichi Akita (Kanazawa Univ.) DATE: Tue, Aug 1, 2023 10:00 - 17:00 Wed, Aug 2, 2023 09:00 - 17:00 Thu, Aug 3, 2023 09:30 - 15:30 PLACE: Hokkaido Univ. Multimedia Education Bldg. 3F(Kita 16, Nishi 8, Kita-ku, Sapporo, Hokkaido, Japan. https://www.imc.hokudai.ac.jp/event/event/%E6%83%85%E5%A0%B1%E6%95%99%E8%82%B2%E9%A4%A8%E4%BD%8D%E7%BD%AE%E5%9B%B3.pdf) TOPICS: Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications ---------------------------------------- Tue, Aug 1 AM (10:00 - 13:00) ---------------------------------------- (1)/ICD 10:00 - 10:45 [Invited Talk] Development of small-size high-resolution cyclic ADC with latest CMOS technology Takashi Oshima, Keisuke Yamamoto, Goichi Ono (Hitachi) (2)/ICD 10:45 - 11:10 A research on a cryogenic ADC for acquisition of environmental noise near quantum devices. Tomoya Yamada, Ryozo Takahashi, Takuji Miki, Makoto Nagata (Kobe Univ.) (3)/ICD 11:10 - 11:35 Evaluation on Flip-Chip Packaging for Quantum Computers at Cryogenic Temperature Misato Taguchi, Ryozo Takahashi (Kobe Univ.), Masako Kato, Nobuhiro Kusuno (Hitachi, Ltd), Takuji Miki, Makoto Nagata (Kobe Univ.) (4)/ITE-IST 11:35 - 12:00 Linearity improvement of VCO based ADC with low power suplly voltage via complimentary bias voltage control Takuto Togashi, Yoshihiro Komatsu, Masayuki Ikebe (Hokkaido Univ.) ----- Lunch Break ( 60 min. ) ----- ---------------------------------------- Tue, Aug 1 PM (13:00 - 17:00) ---------------------------------------- (5)/ICD 13:00 - 13:45 [Invited Talk] R and D of Low Power Semiconductor Technology and It's Application Expansions -- Review R and D of Semiconductor device and LSI for these 43 years -- Koichiro Ishibashi (UEC) (6)/ICD 13:45 - 14:30 [Invited Talk] Research Trends in Low Power Sensors and Wireless Technology Shiro Dosho, Noboru Ishihara, Hiroyuki Ito (TIT) (7)/ITE-IST 14:30 - 15:15 [Invited Talk] Edge AI: Now and Future Masato Motomura (Tokyo Tech) ----- Break ( 10 min. ) ----- (8)/SDM 15:25 - 16:10 [Invited Talk] Low-Frequency Noise Source in the Cryogenic Operation of Short-Channel Bulk MOSFET Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) (9)/SDM 16:10 - 16:35 Additional High-Pressure Hydrogen Annealing Improves the Cryogenic Operation of Si (110)-oriented n-MOSFETs Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST) (10)/SDM 16:35 - 17:00 Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs Ryusei Ri, Takayuki Mori (KIT), Hiroshi Oka, Takahiro Mori (AIST), Jiro Ida (KIT) ---------------------------------------- Wed, Aug 2 AM (09:00 - 13:15) ---------------------------------------- (11)/ICD 09:00 - 09:45 [Invited Talk] A 33kDMIPS 6.4W Vehicle Communication Gateway Processor Achieving 10Gbps/W Network Routing, 40ms CAN Bus Start-Up and 1.4mW Standby Kenichi Shimada, Keiichiro Sano, Kazuki Fukuoka, Hiroshi Morita, Masayuki Daito, Tatsuya Kamei, Hiroyuki Hamasaki, Yasuhisa Shimazaki (Renesas) (12)/ICD 09:45 - 10:10 A 1W/8R 20T SRAM Codebook for Deep Learning Processors to Reduce Main Memory Bandwidth Ryotaro Ohara, Masaya Kabuto, Masakazu Taichi, Atsushi Fukunaga, Yuto Yasuda, Riku Hamabe, Shintaro Izumi, Hiroshi Kawaguchi (Kobe Univ) (13)/ITE-IST 10:10 - 10:35 A Small-Area and Highly-Linear Column Readout Circuit for LOFIC CMOS Image Sensor Ryotaro Hotta, Shunsuke Okura, Ai Otani, Kazuki Tatsuta (Ritsmeikan), Ken Miyauchi, Han Sangman, Hideki Owada, Isao Takayanagi (Brillnics) ----- Break ( 10 min. ) ----- (14)/ITE-IST 10:45 - 11:30 [Invited Talk] The Image Sensor Technology: Building the Foundation for Information Sensing Societies Hayato Wakabayashi (Sony Semiconductor Solutions) (15)/ITE-IST 11:30 - 12:15 [Invited Talk] Multimodal flexible sensor system Kuniharu Takei (Hokkaido Univ.) ----- Lunch Break ( 60 min. ) ----- ---------------------------------------- Wed, Aug 2 PM (13:15 - 17:00) ---------------------------------------- (16)/SDM 13:15 - 14:00 [Invited Talk] A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode for 3D Integrated Devices Masaharu Kobayashi, Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka (NAIST) (17)/SDM 14:00 - 14:45 [Invited Talk] Technology Trends in CMOS Devices for Advanced Logic LSIs -- FinFET, BS-PDN, GAA-NS-FET, CFET, 2D-CFET -- Hitoshi Wakabayashi (Tokyo Tech) (18)/SDM 14:45 - 15:10 Multi-Output MOSFET for Standard Sensor/Circuit Design Platform Device Tomochika Harada (Yamagata University) ----- Break ( 10 min. ) ----- (19) 15:20 - 17:00 ---------------------------------------- Thu, Aug 3 AM (09:30 - 13:00) ---------------------------------------- (20)/SDM 09:30 - 10:15 [Invited Talk] Current issue & development prospects for 2D layered material devices Kosuke Nagashio (UTokyo) (21)/SDM 10:15 - 11:00 [Invited Talk] Demonstration of Recovery Annealing on 7-Bits per Cell 3D Flash Memory at Cryogenic Operation for Bit Cost Scalability and Sustainability Yuta Aiba, Hitomi Tanaka, Fumie Kikushima, Hiroki Tanaka, Toshio Fujisawa, Hideko Mukaida, Tomoya Sanuki (KIOXIA) ----- Break ( 10 min. ) ----- (22)/ITE-IST 11:10 - 11:35 Stabilizing Variable Filters Using Inverse Trigonometric Functions Tian-Bo Deng (Toho Univ.) (23)/ITE-IST 11:35 - 12:00 A method for analyzing chlorophyll-a concentration in the seawater surface layer by image hue analysis. Shunya Kosako, Toshihiko Hamasaki (HIT) ----- Break ( 60 min. ) ----- ---------------------------------------- Thu, Aug 3 PM (13:00 - 15:30) ---------------------------------------- (24)/ICD 13:00 - 13:45 [Invited Talk] Energy Field, Computer Shape Noriyuki Miura (Osaka Univ.) (25)/ICD 13:45 - 14:30 [Invited Talk] Load Adaptive Active Gate Driver Integrated Circuit for Power Device Shusuke Kawai, Takeshi Ueno, Satoshi Takaya, Koutaro Miyazaki (Toshiba), Kohei Onizuka (Toshiba Europe Limited), Hiroaki Ishihara (Toshiba) ----- Break ( 10 min. ) ----- (26)/ICD 14:40 - 15:05 Real-Time Gate Current Change Gate Driver IC to Adapt to Operating Condition Variations of SiC MOSFETs Dibo Zhang, Kohei Horii, Katsuhiro Hata, Makoto Takamiya (UTokyo) (27)/ICD 15:05 - 15:30 Gate Driver IC with Fully Integrated Overcurrent Protection Function by Measuring Gate-to-Emitter Voltage Haifeng Zhang, Dibo Zhang, Hiromu Yamasaki, Katsuhiro Hata (Univ. of Tokyo), Keiji Wada (Tokyo Metropolitan Univ.), Kan Akatsu (Yokohama National Univ.), Ichiro Omura (Kyusyu Institute of Technology), Makoto Takamiya (Univ. of Tokyo) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. Invited Talk will have 40 minutes for presentation and 5 minutes for discussion. === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Fri, Oct 13, 2023: Niche, Tohoku Univ. [Fri, Aug 25], Topics: Process Science and New Process Technology Thu, Nov 9, 2023 - Fri, Nov 10, 2023: [Mon, Sep 4], Topics: Process, Device, Circuit simulation, etc. # SECRETARY: Kiwamu SAKUMA (KIOXIA Corporation) E-mail:         oxia === Technical Committee on Integrated Circuits and Devices (ICD) === # FUTURE SCHEDULE: Thu, Sep 28, 2023: [unfixed] Tue, Oct 31, 2023: [Mon, Aug 21], Topics: Hardware Security, etc. Wed, Nov 15, 2023 - Fri, Nov 17, 2023: Civic Auditorium Sears Home Yume Hall [Fri, Sep 8], Topics: Design Gaia 2023 -New Field of VLSI Design- # SECRETARY: Kousuke Miyaji (Shinshu university) E-mail: k     nshu-u === Technical Group on Information Sensing Technologies (ITE-IST) === # SECRETARY: Masayuki Ikebe (Hokkaido university) E-mail: i  beist  iLast modified: 2023-07-26 13:42:30 |
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