ken-system: Advance Program

IEICE Technical Committee Submission System
Advance Program

Online Proceedings
[Sign in]
Tech. Rep. Archives

===============================================
Technical Committee on Silicon Device and Materials (SDM)
Chair: Tanemasa Asano Vice Chair: Toshihiro Sugii
Secretary: Morifumi Ohno, Shigeru Kawanaka
Assistant: Yuichi Matsui

DATE:
Thu, Jun 7, 2007 13:30 - 17:10
Fri, Jun 8, 2007 09:00 - 15:55

PLACE:
(Prof. Seiichi Miyazaki. 082-424-7656)

TOPICS:
Sci. & Technol. for Thin Dielectrics for MIS Devices

----------------------------------------
Thu, Jun 7 PM (13:30 - 17:10)
----------------------------------------

(1) 13:30 - 13:55
Analysis of Electron and Hole Trap in MONOS-type Nonvolatile Memory
Takeshi Ishida, Renichi Yamada, Kazuyoshi Torii (Hitachi), Kenji Shiraishi (Univ. of Tsukuba)

(2) 13:55 - 14:20
Electron Trap Characteristics of Si3N4/SRN/Si3N4 stacked films
Toshiyuki Mine, Takeshi Ishida, Hirotaka Hamamura, Kazuyoshi Torii (Hitachi)

(3) 14:20 - 14:45
Measurement Technique of Carrier Mobility in Silicon Nitride and its Application to Data Retention in MONOS Memories
Kozo Katayama, Kiyoshi Ishikawa (Renesas)

(4) 14:45 - 15:10
Depth Profiling of Chemical Composition and Defect State Density of SiNx Formed by Plasma CVD
Masahi Miura, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Masayuki Kohno, Tatsuo Nishida, Toshio Nakanishi (TEL)

----- Break ( 20 min. ) -----

(5) 15:30 - 15:55
Proposal of the mechanism of multi-electron injection into floating gates embeded in SiO2
Yukihiro Takada, Masakazu Muraguchi, Kenji Shiraishi (Univ. of Tsukuba)

(6) 15:55 - 16:20
Statistical Evaluation of Localized Low Gate Current through Tunnel Dielectric using Integrated Array TEG
Yuki Kumagai, Akinobu Teramoto, Shigetoshi Sugawa, Tomoyuki Suwa, Tadahiro Ohmi (Tohoku Univ.)

(7) 16:20 - 16:45
Workfunction Tuning of B Doped Fully-Silicided Pd2Si Gate
Hiroyuki Shiraishi, Takuji Hosoi, Akio Ohta, Seiichi Miyazaki, Kentaro Shibahara (Hiroshima Univ.)

(8) 16:45 - 17:10
Effects of High-Pressure H2O Vapor annealing on SiO2/4H-SiC Interface Properties and MOSFET Performance
Hiroshi Yano, Daisuke Takeda, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST)

----- Break ( 20 min. ) -----

----- Get-together ( 90 min. ) -----

----------------------------------------
Fri, Jun 8 AM (09:00 - 15:55)
----------------------------------------

(9) 09:00 - 09:25
Study on subnitride and valence band offset at Si3N4 / Si interface formed using nitrogen radicals
Akinobu Teramoto, Takashi Aratani, Masaaki Higuchi (Tohoku Univ.), Eiji Ikenaga (JASRI), Hiroshi Nohira (Musashi Institute of Technology), Shigetoshi Sugawa, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.)

(10) 09:25 - 09:50
Effect of Nitrogen Profile and Fluorine Incorporation on Negative-bias Temperature Instability of Ultrathin Plasma-nitrided SiON MOSFETs
Masayuki Terai, Shinji Fujieda (NEC)

(11) 09:50 - 10:15
Modeling of NBTI Degradation for SiON pMOSFET
Junji Shimokawa, Toshiyuki Enda, Nobutoshi Aoki, Hiroyoshi Tanimoto, Sanae Ito, Yoshiaki Toyoshima (Toshiba)

----- Break ( 15 min. ) -----

(12) 10:30 - 10:55
The Effect of Nitrogen Addition into HfSiON on Threshold Voltage Shift
Chihiro Tamura, Tatsuya Naito (Univ. of Tsukuba), Motoyuki Sato, Seiji Inumiya (Selete), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba)

(13) 10:55 - 11:20
Improvement of the electrical properties of La aluminates/Si (100) interface by insertion of one monolayer epitaxial SrSi2
Akira Takashima, Yukie Nishikawa, Tatsuo Schimizu, Masamichi Suzuki, Daisuke Matsushita, Masahiko Yoshiki, Mitsuhiro Tomita, Takeshi Yamaguchi, Masato Koyama, Noburu Fukushima (Toshiba)

(14) 11:20 - 11:45
Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals
Soshi Sato, Kiichi Tachi, Jaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.)

----- Lunch Break ( 60 min. ) -----

(15) 12:45 - 13:10
Annealing atmosphere dependence of effective work function of metal gates on LaAlO3 gate dielectrics.
Masamichi Suzuki, Yoshinori Tsuchiya, Masato Koyama (Toshiba)

(16) 13:10 - 13:35
Electrical Properties of Al2O3 Thin Films Prepared by RF Magnetron Sputtering Method
Yutaka Nishioka, Shin Kikuchi, Isao Kimura, Takehito Jimbo, Koukou Suu (ULVAC)

(17) 13:35 - 14:00
Impact of Interface Reactions on Electrical Characteristics of Ge/High-k Devices
Koji Kita, Hideyuki Nomura, Sho Suzuki, Toshitake Takahashi, Tomonori Nishimura, Akira Toriumi (Univ.of Tokyo)

----- Break ( 15 min. ) -----

(18) 14:15 - 14:40
Evaluation of Thermal Stability of HfO2/SiONx/Ge(100) Stacked Structures using by Photoemission Spectroscopy
Akio Ohta, Hiroshi Nakagawa, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)

(19) 14:40 - 15:05
Formation and characterization of Ge$_3$N$_4$ thin layers
Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Kiyoshi Yasutake, Heiji Watanabe (Osaka Univ.)

(20) 15:05 - 15:30
Characteristics of HfO2/Ge-nitride/Ge MIS structures
Tatsuro Maeda, Yukinori Morita, Masayasu Nishizawa (AIST), Shinichi Takagi (AIST/Univ. of Tokyo)

(21) 15:30 - 15:55
Growth and Characterization of Pr-Oxide-Based Dielectric Films on Ge Substrates
Mitsuo Sakashita, Nobuyuki Kito (Nagoya Univ.), Akira Sakai (Osaka Univ.), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.)

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Mon, Jun 25, 2007 - Wed, Jun 27, 2007: Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Thu, Apr 12], Topics: 2007 Asia-Pacific Workshopn on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2007)
Thu, Aug 23, 2007 - Fri, Aug 24, 2007: Kitami Institute of Technology [Mon, Jun 18], Topics: VLSI Circuit and Device Technologies (High Speed, Low Voltage, and Low Power Consumption)

# SECRETARY:
Yasushiro Nishioka (Nihon University, College of Science and Technology)
TEL047-469-6482,FAX047-467-9504
E-mail: