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Technical Committee on Silicon Device and Materials (SDM)
Chair: Shunichiro Ohmi (Tokyo Inst. of Tech.) Vice Chair: Tatsuya Usami (Rapidus)
Secretary: Tomoyuki Suwa (Tohoku Univ.), Taiji Noda (Panasonic)
Assistant: Takuji Hosoi (Kwansei Gakuin Univ.), Takuya Futase (Western Digital)
DATE:
Fri, Oct 13, 2023 13:00 - 17:20
PLACE:
TOPICS:
Process Science and New Process Technology
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Fri, Oct 13 PM (13:00 - 17:20)
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(1) 13:00 - 13:40
[Invited Talk]
Defect Reduction in UV Nanoimprint Lithography
Toshiki ITO (Canon)
(2) 13:40 - 14:20
[Invited Talk (Young Researcher)]
Investigation on Thermoelectric Properties of Flexible Thermoelectric Power Generators from Conductive Fabrics
Hudzaifah Al Hijri, Daiki Kansaku, Hiroya Ikeda (Shizuoka Univ.)
----- Break ( 10 min. ) -----
(3) 14:30 - 15:10
[Invited Talk]
Determination of charge centroid location and energy depth of charge carriers trapped in silicon nitride charge-trap layers
Kiyoteru Kobayashi (Tokai Univ.)
(4) 15:10 - 15:50
[Invited Talk]
statistical analysis of random telegraphic noise dependence on operating condition using electrical characteristic measurement platform
Takezo Mawaki, Rihito Kuroda (Tohoku Univ.)
----- Break ( 10 min. ) -----
(5) 16:00 - 16:20
Excimer laser annealing method with the controlled grain size of poly-Si films and TFT characteristics
Shu Nishida, Keita Katayama, Daisuke Nakamura (Kyushu Univ.), Tetsuya Goto (Tohoku Univ.), Hiroshi Ikenoue (Kochi Univ. of Technology)
(6) 16:20 - 16:40
Formation and basic evaluation of gallium oxide thin film on sapphire substrate
Fuminobu Imaizumi, Takumi Morita (NIT, Oyama college)
(7) 16:40 - 17:00
Formation process of GaN MOS interface suppressing interfacial oxidation
Tsurugi Kondo, Katsunori Ueno, Ryo Tanaka, Shinya Takashima, Masaharu Edo (Fuji Electric), Tomoyuki Suwa (NICHe, Tohoku Univ.)
(8) 17:00 - 17:20
A study on the integration process of ReRAM and OFET utilizing Nitrogen doped LaB6/LaBxNy stacked structure
Jiaang Zhao, Shun-ichiro Ohmi (Tokyo Tech)
# Information for speakers
General Talk will have 15 minutes for presentation and 5 minutes for discussion.
Invited Talk will have 30 minutes for presentation and 10 minutes for discussion.
=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:
Thu, Nov 9, 2023 - Fri, Nov 10, 2023: [Mon, Sep 4], Topics: Process, Device, Circuit simulation, etc.
Wed, Jan 31, 2024: KIT Toranomon Graduate School , Topics: Advanced semiconductor devices and processes (Special feature on IEDM)
Last modified: 2023-08-28 17:21:23
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