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Technical Committee on Silicon Device and Materials (SDM)
Chair: Shunichiro Ohmi (Tokyo Inst. of Tech.) Vice Chair: Tatsuya Usami (ASM Japan)
Secretary: Tomoyuki Suwa (Tohoku Univ.), Taiji Noda (Panasonic)
Assistant: Takuji Hosoi (Kwansei Gakuin Univ.), Takuya Futase (Western Digital)

DATE:
Mon, Jun 26, 2023 10:00 - 15:30

PLACE:
Research Institute for Nanodevices, Hiroshima University(1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527 JAPAN. https://www.rnbs.hiroshima-u.ac.jp/en/. Takuji Hosoi (Kwansei Gakuin Univ.))

TOPICS:
Material Science and Process Technology for MOS Devices, Memories, and Power Devices

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Mon, Jun 26 AM (10:00 - 15:30)
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----- Opening & Award Ceremony ( 10 min. ) -----

(1) 10:10 - 10:50
[Memorial Lecture]
Optimum Design of Channel Material and Surface Orientation for Extremely Thin Body nMOSFETs Based on Nonlinear Modeling of Surface Roughness Scattering
Kei Sumita, Min-Soo Kang, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi (U. Tokyo)

(2) 10:50 - 11:30
[Memorial Lecture]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic-MOSFET Operation
Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST)

(3) 11:30 - 11:50
Characterization of ultrathin SiO2/SiC interfaces by using self-assembled monolayers
Ryo Okuhira (Kwansei Gakuin Univ.), Takamasa Kawanago (Tokyo Tech), Takuji Hosoi (Kwansei Gakuin Univ.)

(4) 11:50 - 12:10
Impact of SiH4 exposure to Fe-NDs on silicidation reaction
Haruto Saito, Katsunori Makihara, Shun Tanida, Noriyuki Taoka, Seiichi Miyazaki (Nagoya Univ.)

(5) 12:10 - 12:30
Evaluations of Crystalline Structures and Ferroelectricity of Zr/Hf-Multilayer Structures Formed by Thermal Oxidization
Yunosuke Sano (Nagoya Univ.), Taoka Noriyuki (AIT), Makihara Katsunori (Nagoya Univ.), Ohta Akio (Hukuoka Univ.), Miyazaki Seiichi (Nagoya Univ.)

----- Lunch Break ( 60 min. ) -----

(6) 13:30 - 14:10
[Invited Lecture]
Pioneering Nondestructive Imaging of Ferroelectric Capacitors by Operando Laser-Based Photoemission Electron Microscopy
Hirokazu Fujiwara, Yuki Itoya, Masaharu Kobayashi, Cedric Bareille, Shik Shin, Toshiyuki Taniuchi (Univ. of Tokyo)

(7) 14:10 - 14:50
[Invited Lecture]
Demonstration of Crystal Phase Junction Transistor
Katsuhiro Tomioka, Yu Katsumi, Junichi Motohisa (Hokkaido Univ.)

(8) 14:50 - 15:30
[Invited Talk]
Atomic-Scale and Real-Time Observation of Solid-Phase Crystallization in Thin Silicon Film using in situ Heating High-Resolution TEM
-- Toward High-Performance Poly-Si Channel --
Manabu Tezura, Takanori Asano, Riichiro Takaishi, Mitsuhiro Tomita, Masumi Saitoh, Hiroki Tanaka (Kioxia Corp.)

# Information for speakers
General Talk will have 15 minutes for presentation and 5 minutes for discussion.
Memorial Lecture will have 35 minutes for presentation and 5 minutes for discussion.
Invited Lecture will have 35 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Tue, Aug 1, 2023 - Thu, Aug 3, 2023: Hokkaido Univ. Multimedia Education Bldg. 3F [Tue, Jun 13], Topics: Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications

# SECRETARY:
Takuji HOSOI (Kwansei Gakuin University)