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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Shigeyoshi Watanabe (Shonan Inst. of Tech.) Vice Chair: Toshihiro Sugii (Fujitsu Microelectronics) Secretary: Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony) Assistant: Syunichiro Ohmi (Tokyo Inst. of Tech.) DATE: Mon, Jun 9, 2008 13:30 - 17:40 Tue, Jun 10, 2008 09:30 - 15:00 PLACE: (03-5452-6342(藤岡研究室）) TOPICS: Science and Sci. & Technol. for Thin Dielectrics for MIS Devices ---------------------------------------- Mon, Jun 9 PM (13:30 - 15:40) ---------------------------------------- (1) 13:30 - 14:30 [Tutorial Lecture] Current Status and Prospects of High Mobility Channel Technologies for High performance CMOS Shinichi Takagi (Univ. of Tokyo/MIRAI-AIST) ----- Break ( 10 min. ) ----- (2) 14:40 - 15:40 [Tutorial Lecture] Development History of Compound Semiconductor Electron Devices Yasuo Ohno (Tokushima Univ.) ----- Break ( 10 min. ) ----- ---------------------------------------- Mon, Jun 9 PM (15:50 - 17:40) ---------------------------------------- (3) 15:50 - 16:15 HoleSubband Dispersion in Si inversion Layers Sakura N. Takeda, Makoto Morita, Ｔａkuya Ohsugi, Yohei Tanigawa, Hiroshi Daimon (NAIST) (4) 16:15 - 16:40 Accurate Evaluation of MOS Inversion Layer Mobility Akira Toriumi, Koji Kita (Univ. Tokyo) ----- Break ( 10 min. ) ----- (5) 16:50 - 17:15 Inversion-Layer Capacitance and Low-Field Mobility Characteristics in Si(110) pMOSFETs Masumi Saitoh, Shigeki Kobayashi, Ken Uchida (Toshiba) (6) 17:15 - 17:40 Mobility Enhancement in Ultra Thin Body SOI MOSFETs by Quantum Confinement Effects Toshiro Hiramoto, Ken Shimizu, Gen Tsutsui (Univ. of Tokyo) ----- Banquet ( 90 min. ) ----- ---------------------------------------- Tue, Jun 10 AM (09:30 - 10:20) ---------------------------------------- (7) 09:30 - 09:55 Transconductance enhancement of strained-Si nanowire FETs Aya Seike, Tomoyuki Tange, Itsutaku Sano, Yuuki Sugiura, Ikushin Tsuchida, Hiromichi Ohta, Takanobu Watanabe (Waseda Univ.), Daisuke Kosemura, Atsushi Ogura (Meiji Univ.), Iwao Ohdomari (Waseda Univ.) (8) 09:55 - 10:20 Gate Dielectrics Interface Control for III-V MISFET Tetsuji Yasuda, Noriyuki Miyata (AIST), Akihiro Ohtake (NIMS) ----- Break ( 10 min. ) ----- ---------------------------------------- Tue, Jun 10 AM (10:30 - 11:45) ---------------------------------------- (9) 10:30 - 10:55 Backside X-ray Photoelectron Spectroscopy of Ru/HfSiON Gate Stack -- Origin of Change in Effective Work Function of Ru -- Taiki Mori, Akio Ohta, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) (10) 10:55 - 11:20 The role of the high-k/SiO2 interface in the control of the threshold voltage for high-k MOS devices Kunihiko Iwamoto, Yuuichi Kamimuta (MIRAI-ASET), Yu Nunoshige (Shibaura Institute of Technology), Akito Hirano, Arito Ogawa, Yukimune Watanabe (MIRAI-ASET), Shinji Migita, Wataru Mizubayashi, Yukinori Morita (MIRAI-ASRC, AIST), Masashi Takahashi (MIRAI-ASET), Hiroyuki Ota (MIRAI-ASRC, AIST), Toshihide Nabatame (MIRAI-ASET), Akira Toriumi (The University of Tokyo) (11) 11:20 - 11:45 XPS Study of TiAlN/HfSiON Gate Stack -- Reduction of Effective Work Function Change Induced by Al Diffusion -- Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) ----- Lunch Break ( 60 min. ) ----- ---------------------------------------- Tue, Jun 10 PM (12:45 - 15:00) ---------------------------------------- (12) 12:45 - 13:10 XPS real-time monitoring on the development of Si suboxides during formation of thermal oxide on Si(110) surface Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Konno, Mitsutaka Matsumoto, Atsushi Kato, Eiji Saito, Maki Suemitsu (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA) (13) 13:10 - 13:35 Fabrication of Pr oxide films by MOCVD and evaluation of its electrical properties Hiroki Kondo, Shinya Sakurai (Nagoya Univ.), Akira Sakai (Osaka Univ.), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.) ----- Break ( 10 min. ) ----- (14) 13:45 - 14:10 Theoretical Studies on the Charge Trap Mechanisms of MONOS Memories Kenji Shiraishi, Kenji Kobayashi (Univ of Tsukuba), Takeshi Ishida, Yutaka Okuyama, Renichi Yamada (Central Research Labs., Hitachi) (15) 14:10 - 14:35 Characterization of Metal Nanodots Nonvolatile Memory Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi (Tohoku Univ.) (16) 14:35 - 15:00 Bio-nano dot floating gate memory with High-k films Kosuke Ohara, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC) # Information for speakers Tutorial Lecture will have 50 minutes for presentation and 10 minutes for discussion. === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Wed, Jul 9, 2008 - Fri, Jul 11, 2008: Kaderu２・７ [Fri, Apr 25], Topics: 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Thu, Jul 17, 2008 - Fri, Jul 18, 2008: Kikai-Shinko-Kaikan Bldg. [Fri, May 16] # SECRETARY: Shigeru KAWANAKA (Toshiba) TEL 045-776-5670, FAX 045-776-4104  ge       ba Last modified: 2008-04-17 10:45:33 |
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