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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Yuzou Oono (Univ. of Tsukuba) Vice Chair: Tatsuya Kunikiyo (Renesas) Secretary: Rihito Kuroda (Tohoku Univ.) Assistant: Tadashi Yamaguchi (Renesas) DATE: Thu, Oct 16, 2014 14:00 - 17:20 Fri, Oct 17, 2014 10:00 - 15:50 PLACE: Niche, Tohoku Univ.(6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan. http://www.fff.niche.tohoku.ac.jp/contactus_e.html. Rihito Kuroda, Tohoku University. +81-22-795-3977) TOPICS: Process Science and New Process Technology ---------------------------------------- Thu, Oct 16 PM (14:00 - 17:20) ---------------------------------------- (1) 14:00 - 14:50 [Invited Talk] Performance improvement and present status of IGBT Tomohide Terashima (Mitsubishi Electric Corp.) (2) 14:50 - 15:20 Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.), Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa (LAPIS Semiconductor Miyagi) (3) 15:20 - 15:50 A study on Si surface flattening process utilizing atmospheric annealing system Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) ----- Break ( 10 min. ) ----- (4) 16:00 - 16:30 Electrical characteristics of as-deposited HfN gate insulator formed by ECR plasma sputtering Nithi Atthi, Shun-ichiro Ohmi (TokyoTech) (5) 16:30 - 17:20 [Invited Talk] Ion Implantation Technologies for Image Sensing Devices Yoji Kawasaki, Genshu Fuse, Makoto Sano, Emi Ooga, Masazumi Koike, Kazuhiro Watanabe, Michiro Sugitani (SEN Corp.) ----- Banquet ( 120 min. ) ----- ---------------------------------------- Fri, Oct 17 AM (10:00 - 11:40) ---------------------------------------- (6) 10:00 - 10:30 Study on compositional transition layers at Si3N4/Si interface formed by radical nitridation Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ----- Break ( 10 min. ) ----- (7) 10:40 - 11:10 Initial stage of oxidation on 4H-SiC by AR-XPS using angle-resolved X-ray photoelectron spectroscopy Tomoya Sasago, Shunta Yamahori, Hiroshi Nohira (Tokyo City Univ.) (8) 11:10 - 11:40 Epitaxial Growth of Ge and Ge1-xSnx Films by MOCVD Kohei Suda, Seiya Ishihara, Takahiro Kijima, Naomi Sawamoto (Meiji Univ.), Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh (Gas-phase Growth), Yoshio Oshita (Toyota Technological Inst.), Atsushi Ogura (Meiji Univ.) ---------------------------------------- Fri, Oct 17 PM (13:00 - 15:50) ---------------------------------------- (9) 13:00 - 13:50 [Invited Talk] Analysis of Multi-Trap Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETs Toshiaki Tsuchiya (Shimane Univ.) (10) 13:50 - 14:20 Analysis of trap density causing random telegraph noise in MOSFETs Toshiki Obara, Akinobu Teramoto, Rihito Kuroda, Akihiro Yonezawa, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ----- Break ( 10 min. ) ----- (11) 14:30 - 15:20 [Invited Talk] Back-Bias Control technique for Suppression of Die-to-Die Delay Variability of SOTB MOS Circuits at Ultralow-Voltage (0.4 V) Operation Hideki Makiyama, Yoshiki Yamamoto, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Yasuo Yamaguchi (LEAP), Koichiro Ishibashi (Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo) (12) 15:20 - 15:50 Design method of stacked type NAND MRAM Shigeyoshi Watanabe (Shonan Inst. of Tech), Shoto Tamai (Oi Electric Co. LTD.) === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Thu, Nov 6, 2014 - Fri, Nov 7, 2014: Kikai-Shinko-Kaikan Bldg. [Tue, Sep 16], Topics: Process, Device, Circuit Simulation, etc. Fri, Dec 12, 2014: Kyoto University [Fri, Oct 10], Topics: Si and Si-related Materials and Devices, Display Technology Tue, Jan 27, 2015: Kikai-Shinko-Kaikan Bldg. [unfixed] # SECRETARY: Rihito Kuroda(Tohoku Univ.) Tel 022-795-4833 Fax 022-795-4834 E-mail:     fff   e   Last modified: 2014-10-02 12:43:38 |
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