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Technical Committee on Silicon Device and Materials (SDM)
Chair: Yasuo Nara (Fujitsu Semiconductor) Vice Chair: Yuzou Oono (Univ. of Tsukuba)
Secretary: Shintaro Nomura (Univ. of Tsukuba), Yoshitaka Sasago (Hitachi)

DATE:
Mon, Feb 4, 2013 10:00 - 16:50

PLACE:
機械振興会館地下3階研修1号室(http://www.jspmi.or.jp/about/access.html)

TOPICS:

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Mon, Feb 4 AM (10:00 - 16:50)
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----- Opening Address ( 5 min. ) -----

(1) 10:05 - 10:45
Improved Thermal Conductivity by Vertical Graphene Contact Formation for Thermal TSV
Akio Kawabata, Mizuhisa Nihei, Tomo Murakam, Motonobu Sato, Naoki Yokoyama (AIST)

(2) 10:45 - 11:25
CuSn/InAu microbump induced local deformation and mechanical stress in high-density 3D-LSI
Murugesan Murugesan, Mitsumasa Koyanagi (Tohoku Univ.)

(3) 11:25 - 12:05
*
Takashi Kurusu, Hiroyoshi Tanimoto, Makoto Wada, Atsunobu Isobayashi, Akihiro Kajita, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba)

----- Lunch Break ( 65 min. ) -----

(4) 13:10 - 13:50
Smart interconnect technology using atom switch for low-power programmable Logic
Munehiro Tada, Toshitsugu Sakamoto, Makoto Miyamura, Naoki Banno, Koichiro Okamoto, Noriyuki Iguchi, Hiromitsu Hada (LEAP)

(5) 13:50 - 14:30
Nano-ordered Evaluation for Local Distribution of Adhesion Strength Between Cu/Dielectric in LSI Circuit
S.Kamiya, Hisashi Sato (Nagoya Inst. of Tech.), Masaki Omiya (Keio Univ.), Nobuyuki Shishido, Kozo Koiwa, Masahiro Nishida (Nagoya Inst. of Tech.), Tomoji Nakamura, Takashi Suzuki (Fujitsu Labs), Takeshi Nokuo, Toshiaki Suzuki (JEOL)

(6) 14:30 - 15:10
Wafer-level Chip Scale Package for White LED with High Thermal Dissipation
Yosuke Akimoto, Akihiro Kojima, Miyoko Shimada, Hideyuki Tomizawa, Hideto Furuyama, Susumu Obata, Kazuhito Higuchi, Yoshiaki Sugizaki, Hideki Shibata (Toshiba)

----- Break ( 15 min. ) -----

(7) 15:25 - 16:05
High Reliability Technology of Fine Pitch Re-wiring for High Density Chip Package
-- Cu Re-wiring Covering with Metal-Cap Barrier Technology --
Tsuyoshi Kanki, Junya Ikeda, Shoichi Suda, Yasushi Kobayashi, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Labs)

(8) 16:05 - 16:45
Novel Seed Layer Formation Using Electroless Copper Deposition For High Aspect Ratio TSV
Fumihiro Inoue, Shoso Shingubara (Kansai Univ.), Harold Philipsen (IMEC)

----- Closing Address ( 5 min. ) -----

# Information for speakers
General Talk will have 30 minutes for presentation and 10 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Wed, Feb 27, 2013 - Thu, Feb 28, 2013: Hokkaido Univ. [Fri, Dec 7], Topics: Functional nanodevices and related technologies
Thu, Apr 25, 2013 - Fri, Apr 26, 2013: Yakusima Environmental Culture Village Center [Sun, Feb 17], Topics: Advanced Thin-Film Devices (Si, Compound, Organic), biotechnology, Materials, Measurement Technique and Related Topics
Thu, May 16, 2013 - Fri, May 17, 2013: Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. [Thu, Mar 14], Topics: Crystal Growth, Characterization, Device, etc (compound semiconductors, Si, SiGe, optical and electronic materials)

# SECRETARY:
Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E-mail: o