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Technical Committee on Silicon Device and Materials (SDM)
Chair: Shunichiro Ohmi (Tokyo Inst. of Tech.) Vice Chair: Tatsuya Usami (Rapidus)
Secretary: Tomoyuki Suwa (Tohoku Univ.), Taiji Noda (Panasonic)
Assistant: Takuji Hosoi (Kwansei Gakuin Univ.), Takuya Futase (Western Digital)
DATE:
Thu, Nov 9, 2023 10:25 - 16:45
Fri, Nov 10, 2023 10:30 - 16:20
PLACE:
Hybrid conference
TOPICS:
Process, Device, Circuit simulation, etc.
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Thu, Nov 9 AM (10:25 - 12:10)
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----- Opening Address ( 5 min. ) -----
(1) 10:30 - 11:20
[Invited Talk]
SISPAD 2023 Review
Hajime Tanaka (Osaka Univ.)
(2) 11:20 - 12:10
[Invited Talk]
Current Status and Future Prospects of GaN Vertical Power Devices on GaN substrates
Jun Suda (Nagoya Univ.)
----- Lunch Break ( 60 min. ) -----
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Thu, Nov 9 PM (13:10 - 16:45)
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(3) 13:10 - 14:00
[Invited Talk]
Overview of advanced logic devices and their enablement process technologies
Tomonari Yamamoto (TEL)
(4) 14:00 - 14:50
[Invited Talk]
Quantum Transport Simulation for Analysis of Surface Roughness Scattering in Semiconductor Nanosheet
Jo Okada, Hajime Tanaka, Nobuya Mori (Osaka Univ.)
----- Break ( 15 min. ) -----
(5) 15:05 - 15:55
[Invited Talk]
Superconducting quantum computing: current status and challenges
Eisuke Abe (RIKEN)
(6) 15:55 - 16:45
[Invited Talk]
Development of Quantum Device Simulator toward Large-Scale Integration of Silicon Qubits
Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST)
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Fri, Nov 10 AM (10:30 - 12:10)
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(7) 10:30 - 11:20
[Invited Talk]
Simulation of graphene surface plasmon propagation based on tight-binding method and finite-difference time-domain method
Satofumi Souma, Shota Ogisawa (Kobe Univ)
(8) 11:20 - 12:10
[Invited Talk]
Self-Consistent Monte Carlo Device Simulation of Capture-Excitation Processes of Carriers
Futo Hashimoto, Toma Suzuki, Hideki Minari, Nobuya Nakazaki, Jun Komachi (Sony Semiconductor Solutions), Nobuyuki Sano (Univ. of Tsukuba)
----- Lunch Break ( 60 min. ) -----
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Fri, Nov 10 PM (13:10 - 14:25)
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(9) 13:10 - 14:00
[Invited Talk]
Noies Source of MOSFETs Operating at Cryogenic Temperature
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST)
(10) 14:00 - 14:25
Examination of high high-precision device modeling methods
-- Comparison of Neural Networks and Linear Regression --
Kengo Nakata, Takayuki Mori, Jiro Ida (Kanazawa Inst. Tech.)
----- Break ( 15 min. ) -----
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Fri, Nov 10 PM (14:40 - 16:20)
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(11) 14:40 - 15:30
[Invited Talk]
Characterization of Physical Properties in GaN under High Electric Field
-- Impact Ionization Coefficients and Critical Electric Field --
Takuya Maeda (UTokyo)
(12) 15:30 - 16:20
[Invited Talk]
DFT study on electronic structure and carrier-transport property of SiC-MOS interface.
Tomoya Ono (Kobe Univ.)
# Information for speakers
Invited Talk will have 40 minutes for presentation and 10 minutes for discussion.
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.
=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:
Wed, Jan 31, 2024: KIT Toranomon Graduate School , Topics: Advanced semiconductor devices and processes (Special feature on IEDM)
Wed, Feb 21, 2024: Tokyo University-Hongo-Engineering Bldg.4 [Tue, Dec 26]
# SECRETARY:
Taiji Noda
Panasonic Holdings Corporation
3-1-1 Yagumo-naka-machi, Moriguchi City,
Osaka 570-8501, Japan
Phone: +81-70-2917-5991
e-mail: noda.taiji[atmark]jp.panasonic.com
Last modified: 2023-10-30 17:57:53
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