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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Tatsuya Kunikiyo (Renesas) Vice Chair: Takahiro Shinada (Tohoku Univ.) Secretary: Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas) Assistant: Hiroya Ikeda (Shizuoka Univ.) =============================================== Technical Committee on Electronic Information Displays (EID) Chair: Tomokazu Shiga (Univ. of Electro-Comm.) Vice Chair: Mutsumi Kimura (Ryukoku Univ.), Yuko Kominami (Shizuoka Univ.) Secretary: Munekazu Date (NTT), Masahiro Yamaguchi (Tokyo Inst. of Tech.) Assistant: Rumiko Yamaguchi (Akita Univ.), Hiroyuki Nitta (Japan Display), Mitsuru Nakata (NHK), Takashi Kojiri (ZEON), Ryosuke Nonaka (Toshiba) DATE: Mon, Dec 12, 2016 09:30 - 17:15 PLACE: (奈良先端科学技術大学院大学 物質創成科学研究科) TOPICS: Fabrication and Evaluation of Silicon Related Materials ---------------------------------------- Mon, Dec 12 AM (09:30 - 17:15) ---------------------------------------- (1) 09:30 - 09:45 Development of recombination layer in Perovskite/Microcrystalline Si tandem solar cells Song Zhang, Yasuaki Yishikawa, Itaru Raifuku, Tiphaine Bourgeteau, Yukiharu Uraoka (NAIST), Erik Johnson, Martin Foldyna, Yvan Bonnassieux, Pere Roca i Cabarrocas (Ecole polytechnique) (2) 09:45 - 10:00 Evaluation of the Band Offset at FeS2/NiOx Junction for FeS2-Pyrite Heterojunction Solar Cell Yusuke Kawamura, Yasuaki Ishikawa, Shunsuke Uchiyama (NAIST), Yoshitaro Nose (Kyoto Univ.), Yukiharu Uraoka (NAIST) (3) 10:00 - 10:15 Analysis of the cause of high performance IGZO thin film transistor using SrTa2O6 as gate insulator Kento Oikawa, Mami N. Fujii, Juan Paolo Bermundo (NAIST), Kiyoshi Uchiyama (Tsuruoka College), Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) (4) 10:15 - 10:30 Characterization of GaxSn1-xO thin film by the mist CVD method Hiroki Fukushima, Hiromasa Yuge, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ.) ----- Break ( 15 min. ) ----- (5) 10:45 - 11:00 Research and development of new rare metal-free AOS-TFT Kenta Umeda, Yuta Kato, Daiki Nishimoto, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) (6) 11:00 - 11:15 Influence of Electrodes for Magnetoresistance Effect in IGZO Thin Film Devices Asuka Fukawa, Ryuki Nomura, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ.) (7) 11:15 - 11:30 Characteristic Evaluation of GaSnO Thin Film by Hall Measurement Kota Imanishi, Asuka hukawa, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) (8) 11:30 - 11:45 Stimulus Performance of Thin-Film Biological Stimulation Devices Keisuke Tomioka, Kouhei Miyake, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) (9) 11:45 - 12:00 Wireless power transmission using a thin film coil Yuuki Yamamoto, Keigo Misawa, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) ----- Lunch ( 60 min. ) ----- (10) 13:00 - 13:30 [Invited Talk] The tolerance of data retention characteristics to external stresses in metal oxide resistive random access memory Kentaro Kinoshita (Tottori Univ.) (11) 13:30 - 13:45 First-Principles Calculation Studies of Resistive Switching Mechanism in Polycrystalline Metal Oxide Film Takumi Moriyama, Sohta Hida (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) (12) 13:45 - 14:00 Relationship between memory characteristics and Schottky parameters in Pt/Nb:STO junction Toshiki Shiomi, Yuuto Hagihara, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) (13) 14:00 - 14:15 CMOS Inverter Consisting of Self-Aligned Four-Terminal Planar Metal Double-Gate Low-Temperature Poly-Si TFTs on Glass Substrate Hiroki Ohsawa, Akito Hara (Tohoku Gakuin Univ.) (14) 14:15 - 14:30 Thermodynamic Study on Crystallization of Group-IV Amorphous Thin Film by Flash Lamp Annealing Naoto Matsuo, Naoki Yosioka, Akira Heya (Univ Hyogo), Yosiaki Nakamura, Takehiko Yokomori, Masaki Yosioka (USIO INK.) (15) 14:30 - 14:45 Island shape a-Ge film by FLA crystallization Naoki yoshioka, Akira Heya, Naoto matsuo (Univ.of Hyogo), Yoshiaki Nakamura, Takehiko Yokomori, Masaki Yoshioka (USHIO INC) (16) 14:45 - 15:00 Suppression of Etch Pits by Control of Etching Modes in Electrochemical Etching of p-type 4H-SiC Taro Enokizono, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) ----- Break ( 15 min. ) ----- (17) 15:15 - 15:30 Study of the inverter circuit of DNA/Si-MOSFET due to the parasitic capacitance control Hibiki Nakano, Matsuo Naoto, Akira Heya, Tadao Takada, Kazusige Yamana (Univ. of Hyogo), Tadashi Sato, Shin Yokoyama (Univ. Hiroshima) (18) 15:30 - 15:45 Decomposition of Pentacene Molecules and Formation of Graphene-Based Organic Films Using Heated Catalyst Akira Heya, Naoto Matsuo (Univ. of Hyogo) (19) 15:45 - 16:00 Thermoelectric Properties of amorphous-InGaZnO Thin Film Yuki Tawa, Mutsunori Uenuma, Yuta Fujimoto, Daiki Senaha, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) (20) 16:00 - 16:15 Letter Recognition of Cellar Neural Network using Thin Film Transistors Sumio Sugisaki, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) (21) 16:15 - 16:30 Characterization of planar synapses with GTO thin films Keisuke Ikushima, Kenta Umeda, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) (22) 16:30 - 16:45 Research of capacitor-type synapses in the hardware of the neural network Koki Watada, Hiroki Nakanishi, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ.) (23) 16:45 - 17:00 Development of Synapses in Neural Networks using a-IGZO Thin Films Toshimasa Hori, Ryo Tanaka, Yuki Koga, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) (24) 17:00 - 17:15 Analog circuit simulation of cellular neural network Tomoharu Yokoyama, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ) # Information for speakers General Talk will have 12 minutes for presentation and 3 minutes for discussion. Invited Talk will have 25 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is co-sponsored by The Japan Society of Applied Physics. === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Mon, Jan 30, 2017 - Tue, Jan 31, 2017: Miyajima-Morino-Yado(Hiroshima) [Wed, Nov 16], Topics: Circuit, Device and Engineering Science Mon, Jan 30, 2017: Kikai-Shinko-Kaikan Bldg. [unfixed] Mon, Feb 6, 2017: Tokyo Univ. [Fri, Nov 18], Topics: Interconnects, Package and related materials Fri, Feb 24, 2017: Centennial Hall, Hokkaido Univ. [Fri, Dec 16], Topics: Functional nanodevices and related technologies # SECRETARY: Rihito Kuroda(Tohoku Univ.) Tel 022-795-4833 Fax 022-795-4834 E-mail:        e3   === Technical Committee on Electronic Information Displays (EID) === # FUTURE SCHEDULE: Thu, Jan 26, 2017 - Fri, Jan 27, 2017 (tentative): Tokushima Univ. [Sat, Oct 22], Topics: Joint Meeting of Emissive/Non-emissive Displays Mon, Jan 30, 2017 - Tue, Jan 31, 2017: Miyajima-Morino-Yado(Hiroshima) [Wed, Nov 16], Topics: Circuit, Device and Engineering Science Last modified: 2016-10-26 13:59:55 |
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