| IEICE Technical Committee Submission System Advance Program |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top | Go Back | Prev SDM Conf / Next SDM Conf | [HTML] / [HTML(simple)] / [TEXT] | [Japanese] / [English] |
|
=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Tatsuya Kunikiyo (Renesas) Vice Chair: Takahiro Shinada (Tohoku Univ.) Secretary: Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas) Assistant: Hiroya Ikeda (Shizuoka Univ.) DATE: Mon, Jan 30, 2017 10:00 - 16:30 PLACE: Kikai Shinko Kaikan B3F Kenshuu-1(3-5-8, Shibakoen, Minato-ku, Tokyo, 105-0011, Japan.http://www.jspmi.or.jp/english/about/access.html) TOPICS: ---------------------------------------- Mon, Jan 30 AM (10:00 - 16:30) ---------------------------------------- (1) 10:00 - 10:30 [Invited Talk] Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa (ANational Institute of Advanced Industrial ScieIST) (2) 10:30 - 11:00 [Invited Talk] Tunneling MOSFET Technologies using III-V/Ge Materials Shinichi Takagi, Daehwan Ahn, Munetaka Noguchi, Takahiro Gotow, Koichi Nishi, Min-Soo Kim, Mitsuru Takenaka (Univ. of Tokyo) (3) 11:00 - 11:30 [Invited Talk] Experimental Study on Polarization-Limited Operation Speed of Negative Capacitance FET with Ferroelectric HfO2 Masaharu Kobayashi, , , (Univ. of Tokyo) (4) 11:30 - 12:00 [Invited Talk] Fully Coupled 3-D Device Simulation of Negative Capacitance FinFETs for Sub 10 nm Integration Hiroyuki Ota, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) ----- Lunch Break ( 90 min. ) ----- (5) 13:30 - 14:00 [Invited Talk] First Demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and Beyond Shibun Tsuda, Yoshiyuki Kawashima, Kenichiro Sonoda, Atsushi Yoshitomi, Tatsuyoshi Mihara, Shunichi Narumi, Masao Inoue, Seiji Muranaka, Takahiro Maruyama, Tomohiro Yamashita, Yasuo Yamaguchi (Renesas Electronics), Digh Hisamoto (Hitachi) (6) 14:00 - 14:30 [Invited Talk] Novel Voltage Controlled MRAM (VCM) with Fast Read/Write Circuits for Ultra Large Level Cache Yoichi Shiota (AIST), Hiroki Noguchi, Kazutaka Ikegami, Keiko Abe, Shinobu Fujita (Toshiba), Takayuki Nozaki, Shinji Yuasa (AIST), Yoshishige Suzuki (Osaka Univ.) (7) 14:30 - 15:00 [Invited Talk] Voltage-Control Spintronics Memory (VOCSM)Having Potentials of Ultra-Low Energy-Consumption and High-Density Hiroaki Yoda, , , , , , , , , , , , , , (Toshiba) ----- Break ( 30 min. ) ----- (8) 15:30 - 16:00 [Invited Talk] General relationship for cation and anion doping effects on ferroelectric HfO2 formation Xu Lun, Shibayama Shigehisa, Izukashi Kazutaka, Nishimura Tomonori, Yajima Takeaki (Univ. of Tokyo), Migita Shinji (AIST), Toriumi Akira (Univ. of Tokyo) (9) 16:00 - 16:30 [Invited Talk] Novel Functional Passive Element for Future Analogue Signal Processing -- Fabrication and Application of the VO2 Volatile Switch -- Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) # Information for speakers Invited Talk will have 25 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is co-sponsored by The Japan Society of Applied Physics. === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Mon, Feb 6, 2017: Tokyo Univ. [Fri, Nov 18], Topics: Interconnects, Package and related materials Fri, Feb 24, 2017: Centennial Hall, Hokkaido Univ. [Fri, Dec 16], Topics: Functional nanodevices and related technologies Thu, Apr 20, 2017 - Fri, Apr 21, 2017: Tatsugochou Shougaigakushuu Center [Sun, Feb 19], Topics: Organic molecular devices, silicon device, biotechnology, thin film device, novel material, evaluation method, etc # SECRETARY: Rihito Kuroda(Tohoku Univ.) Tel 022-795-4833 Fax 022-795-4834 E-mail:        e3   Last modified: 2016-12-16 14:59:58 |
Notification: Mail addresses are partially hidden against SPAM.
[Download Paper's Information (in Japanese)] <-- Press download button after click here.
[Cover and Index of IEICE Technical Report by Issue]
[Presentation and Participation FAQ] (in Japanese)
[Return to SDM Schedule Page] /
| Go Top | Go Back | Prev SDM Conf / Next SDM Conf | [HTML] / [HTML(simple)] / [TEXT] | [Japanese] / [English] |
[Return to Top Page]