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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Masaaki Kuzuhara (Univ. of Fukui)
Vice Chair Tamotsu Hashidume (Hokkaido Univ.)
Secretary Koichi Murata (NTT)
Assistant Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba)

Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Kiichi Kamimura (Shinshu Univ.)
Vice Chair Kanji Yasui (Nagaoka Univ. of Tech.)
Secretary Hidehiko Shimizu (Niigata Univ.), Naoki Oba (NTT)
Assistant Yasushi Takemura (Yokohama National Univ.), Tadayuki Imai (NTT)

Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Shigeyoshi Watanabe (Shonan Inst. of Tech.)
Vice Chair Toshihiro Sugii (Fujitsu Microelectronics)
Secretary Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony)
Assistant Syunichiro Ohmi (Tokyo Inst. of Tech.)

Conference Date Thu, May 14, 2009 13:30 - 17:05
Fri, May 15, 2009 09:00 - 14:40
Topics Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials） 
Conference Place  
Transportation Guide https://www.ieice.org/~ed/jpn/access%20tecknos-U.pdf
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Person		 Prof. Akihiro WAKAHARA
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, May 14 PM 
13:30 - 17:05
(1) 13:30-13:55 Preparation and Evaluation of SrS:Cu films for blue EL elements ED2009-18 CPM2009-8 SDM2009-8 Masaaki Isai, Yuji Kurachi, Norifumi Yamada, Toshinori Takeuchi, Takashi Hochin (Shizuoka Univ.)
(2) 13:55-14:20 Evaluation of SrS:Cu films for blue EL elements ED2009-19 CPM2009-9 SDM2009-9 Norifumi Yamada, Takashi Hochin, Masaaki Isai (Shizuoka Univ.)
(3) 14:20-14:45 Effect of quartz tube on crystal properties of LiMn2O4 films prepared by RF magnetron sputtering ED2009-20 CPM2009-10 SDM2009-10 Takayuki Hosokawa, Satoshi Sekigawa, Masaaki Isai (Shizuoka Univ.)
(4) 14:45-15:10 Property of Ga2O3 films and evaluation of oxygen sensors properties ED2009-21 CPM2009-11 SDM2009-11 Shinya Kayano, Takashi Horiuchi, Masaaki Isai (Shizuoka Univ.)
  15:10-15:25 Break ( 15 min. )
(5) 15:25-15:50 Preparation of TiO2 thin films by RF magnetron sputtering method and their photocatalytic properties ED2009-22 CPM2009-12 SDM2009-12 Tatsuya Ito, Tatsuya Endo, Masaaki Isai (Shizuoka Univ.), Tetsuya Sakai, Yoichi Hoshi (Tokyo Polytech. Univ.)
(6) 15:50-16:15 A proposal for Highly Transparent Chalcogenide Alloys for Thin-Film-Solar-Cell Applications ED2009-23 CPM2009-13 SDM2009-13 Asraf M. Abdel Haleem, Masaya Ichimura (Nagoya Inst. of Tech.)
(7) 16:15-16:40 Analysis of Atomic and Electronic Structures of Cu2ZnSnS4 Based on the First-Principle Calculation ED2009-24 CPM2009-14 SDM2009-14 Yuki Nakashima, Masaya Ichimura (Nagoya Inst. of Tech.)
(8) 16:40-17:05 Deposition of Microcrystalline SiGe by Magnetron Sputtering on SiO2 Substrates ED2009-25 CPM2009-15 SDM2009-15 Akihiko Hiroe, Tetsuya Goto, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.)
Fri, May 15 AM 
09:00 - 11:45
(9) 09:00-09:25 Growth of Homogeneous InGaSb Ternary Bulk Crystal and the Observation of Composition Profile in the Solution by X-Ray Penetration Method ED2009-26 CPM2009-16 SDM2009-16 Govindasamy Rajesh, Hisashi Morii, Toru Aoki, Tadanobu Koyama, Yoshimi Momose, Akira Tanaka (Shizuoka Univ.), Tetsuo Ozawa (Shizuoka Inst. of Science and Tech.), Yuko Inatomi (JAXA), Yasuhiro Hayakawa (Shizuoka Univ.)
(10) 09:25-09:50 MBE-VLS growth of compound semiconductors nanowires on Si substrates ED2009-27 CPM2009-17 SDM2009-17 Masahito Yamaguchi, Ji-Hyun Paek, Hirohide Ichihashi, Isao Horiuchi (Nagoya Univ.), Nobuhiko Sawaki (Aichi Inst. of Tech.)
(11) 09:50-10:15 Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLP ED2009-28 CPM2009-18 SDM2009-18 Mouleeswaran Deivasigamani., Tadanobu Koyama, Yasuhiro Hayakawa (Shizuoka Univ.)
  10:15-10:30 Break ( 15 min. )
(12) 10:30-10:55 Growth of GaP on Si Substrates at High Temperature by MOVPE ED2009-29 CPM2009-19 SDM2009-19 Tatsuya Takagi, Takuya Okamoto, Shunro Fuke, Yasushi Takano (Shizuoka Univ.)
(13) 10:55-11:20 Luminescence dynamics of p-GaPN alloys and application for modulation doped highly-strained GaAsN/GaPN quantum wells. ED2009-30 CPM2009-20 SDM2009-20 Saburo Mitsuyoshi, Kazuyuki Umeno, Noriyuki Urakami, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.)
(14) 11:20-11:45 Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots ED2009-31 CPM2009-21 SDM2009-21 Noriyuki Urakami, Ryosuke Noma, Kazuyuki Umeno, Saburo Mitsuyoshi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.)
Fri, May 15 PM 
13:00 - 14:40
(15) 13:00-13:25 MOVPE growth and deep-ultraviolet chathodoluminescence of AlGaN on AlN/sapphire ED2009-32 CPM2009-22 SDM2009-22 Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.)
(16) 13:25-13:50 a-plane GaN grown on r-plane sapphire by MOVPE ED2009-33 CPM2009-23 SDM2009-23 Bei Ma, Reina Miyagawa, Weiguo Hu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.)
(17) 13:50-14:15 Operation stability assessment of AlGaN/GaN HEMT ED2009-34 CPM2009-24 SDM2009-24 Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.)
(18) 14:15-14:40 Electrochemical oxidation of GaN for surface control structure ED2009-35 CPM2009-25 SDM2009-25 Naohisa Harada, Nanako Shiozaki, Tamotsu Hashizume (hokkaido Univ.)

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Koichi Murata（NTT)
TEL：046-240-2871、FAX：046-270-2872
E--mail： aecl
Hara Naoki （Fujitsu Lab.）
TEL : 046-250-8242、FAX : 046-250-8168
E--mail : o
Kunio Tsuda（Toshiba）
TEL : 044-549-2142、FAX : 044-520-1501
E--mail : oba 
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address Hidehiko Shimizu（Niigata University）
TEL 025-262-6811, FAX 025-262-6811
E--mail: engi-u

Yasushi Takemura（Yokohama National University）
TEL 045-339-4151, FAX 045-339-4151
E--mail: y 
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Shigeru KAWANAKA (Toshiba)
TEL 045-776-5670, FAX 045-776-4104
E--mail geba 


Last modified: 2009-09-07 15:48:15


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