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Technical Committee on Electron Device (ED)

Chair		Tamotsu Hashidume (Hokkaido Univ.)
Vice Chair		Tetsu Kachi (Toyota Central R&D Labs.)
Secretary		Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba)
Assistant		Michihiko Suhara (Tokyo Metropolitan Univ.), Tetsuzo Ueda (Panasonic)

Technical Committee on Microwaves (MW)

[schedule] [select]

Chair		Kazuhiko Honjo (Univ. of Electro-Comm.)
Vice Chair		Takashi Ohira (Toyohashi Univ. of Tech.), Futoshi Kuroki (Kure National College of Tech.)
Secretary		Kazuo Kawabata (Fujitsu Labs.), Kenjiro Nishikawa (NTT)
Assistant		Kei Sato (NTT DoCoMo), Koji Shibata (Hachinohe Inst. of Tech.)

Conference Date	Thu, Jan 13, 2011 13:30 - 16:55 Fri, Jan 14, 2011 09:30 - 15:20
Topics	Compound Semiconductor IC and High-Speed, High-Frequency Devices/Microwave Technologies
Conference Place
Copyright and reproduction	All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, Jan 13 PM 13:30 - 16:55
(1)	13:30-13:55	The 5.8GHz Receiving and Rectenna Array for Wireless Communication and Power Transmission ED2010-175 MW2010-135	Masakazu Hori, Kosuke Isono, Hirofumi Noji, Yasuhiro Shibuya (TUS), Shigeo Kawasaki (JAXA)
(2)	13:55-14:20	A Study on GaAs-HBT MMIC couplers with feedback circuit techniques ED2010-176 MW2010-136	Kazuya Yamamoto, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Akira Inoue (Mitsubishi Electric)
(3)	14:20-14:45	Broadside Couplers using Offset-Coupled Lines with Adjacent Ground Through Holes in Multi-layered Substrate ED2010-177 MW2010-137	Takeshi Yuasa, Yukihiro Tahara, Tetsu Owada, Naofumi Yoneda (Mitsubishi Electric Corp.)
	14:45-15:00	Break ( 15 min. )
(4)	15:00-15:25	Power Absorption Characteristics for Uniform Microwave Heating of Medium with High Conductivities ED2010-178 MW2010-138	Yuki Nakajima, Suguru Imai, Kenji Taguchi, Tatsuya Kashiwa (Kitami Inst. of Tech.), Toshihide Kitazawa (Ritsumeikan Univ.), Masahiro Suzuki, Kan-ichi Fujii (JAEA)
(5)	15:25-15:50	Broadband High Efficiency Class-E GaN HEMT Amplifier ED2010-179 MW2010-139	Koji Yamanaka, Norihiro Yunoue, Shin Chaki, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric)
	15:50-16:05	Break ( 15 min. )
(6)	16:05-16:30	A High-Speed Digital-to-Analog Converter with InP HBT Technology for Multi-Level Optical Transmission Systems ED2010-180 MW2010-140	Munehiko Nagatani, Hideyuki Nosaka, Shogo Yamanaka, Kimikazu Sano, Koichi Murata (NTT)
(7)	16:30-16:55	32-GHz Phase Shifter IC with 810° control range ED2010-181 MW2010-141	Hideyuki Nosaka, Munehiko Nagatani, Kimikazu Sano, Koichi Murata (NTT)
Fri, Jan 14 09:30 - 15:20
(8)	09:30-09:55	Current collapse characterization of AlGaN/GaN HEMTs using by dual-gate structure ED2010-182 MW2010-142	Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.)
(9)	09:55-10:20	Two-Dimensional Analysis of Backside-Electrode and Gate-Field-Plate Effects on Buffer-Related Current Collapse in AlGaN/GaN HEMTs ED2010-183 MW2010-143	Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.)
	10:20-10:35	Break ( 15 min. )
(10)	10:35-11:00	Boosting of Blocking Voltages in GaN Transistors by Widening Depletion Layer in Si Substrate ED2010-184 MW2010-144	Hidekazu Umeda, Asamira Suzuki, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.)
(11)	11:00-11:25	AlGaN/GaN HFETs using highly C-doped layers on Si substrate ED2010-185 MW2010-145	Takuya Kokawa, Syusuke Kaya, Nariaki Ikeda, Sadahiro Kato (APD)
(12)	11:25-11:50	Developing GaN HEMTs for Ka-Band with 20W ED2010-186 MW2010-146	Keiichi Matsushita, Hiroyuki Sakurai, Yasushi Kashiwabara, Kazutoshi Masuda, Ken Onodera, Hisao Kawasaki, Kazutaka Takagi, Yoshiharu Takada, Kunio Tsuda (Toshiba)
	11:50-13:00	Lunch Break ( 70 min. )
(13)	13:00-13:25	Process dependence of MOS gate dielectric films on 3C-SiC-OI ED2010-187 MW2010-147	Keisuke Yokoyama, Hiroyuki Nakamura, Motoi Nakao, Katsunori Onishi (KIT)
(14)	13:25-13:50	III-V quantum well channel MOSFET with back electrode ED2010-188 MW2010-148	Toru Kanazawa, Ryousuke Terao, Yutaro Yamaguchi, Shunsuke Ikeda, Yoshiharu Yonai, Atsushi Kato, Yasuyuki Miyamoto (Tokyo Tech)
(15)	13:50-14:15	New Stacked Metal-Insulator-Metal Capacitor for future InP-based ICs Applications ED2010-189 MW2010-149	Takuya Tsutsumi, Suehiro Sugitani, Kazumi Nishimura, Minoru Ida (NTT)
	14:15-14:30	Break ( 15 min. )
(16)	14:30-14:55	A low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars ED2010-190 MW2010-150	Ko Kanaya, Hirotaka Amasuga, Shinsuke Watanabe, Yoshitsugu Yamamoto, Naoki Kosaka, Shinichi Miyakuni, Seiki Goto, Akihiro Shima (Mitsubishi Electric)
(17)	14:55-15:20	A Wafer-Level-Chip-Size-Package Technique with Inverted Microstrip Lines for mm-wave Si CMOS ICs ED2010-191 MW2010-151	Yasufumi Kawai, Shinji Ujita, Takeshi Fukuda, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic)

Announcement for Speakers
General Talk	Each speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED	Technical Committee on Electron Device (ED) [Latest Schedule]
	Contact Address	Hara Naoki （Fujitsu Lab.） TEL : +81-46-250-8242、FAX : +81-46-250-8168 E- : o Kunio Tsuda（Toshiba） TEL : +81-44-549-2142、FAX : +81-44-520-1501 E- : oba Michihiko Suhara (Tokyo Metropolitan Univ.) TEL : +81-42-677-2765 Fax : +81-42-677-2756 E- : t Tetsuzo Ueda（Panasonic) TEL：+81-75-956-8273、FAX：+81-75-956-9110 E-： zopac
MW	Technical Committee on Microwaves (MW) [Latest Schedule]
	Contact Address	Kei Satoh (NTT DOCOMO,INC.) TEL:+81-46-840-6230 FAX:+81-46-840-3789 E-:i or Kazuo Kawabata(Fujitsu Laboratories Ltd.) E-:KabaKao