|
|
| Chair |
|
Naoki Hara (Fujitsu Labs.) |
| Vice Chair |
|
Koichi Maezawa (Univ. of Toyama) |
| Secretary |
|
Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC) |
| Assistant |
|
Toshikazu Suzuki (JAIST), Manabu Arai (New JRC) |
|
| Conference Date |
Fri, Aug 1, 2014 10:30 - 16:40 |
| Topics |
Semiconductor Process and Devices (surface, interface, reliability), others |
| Conference Place |
|
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Fri, Aug 1 AM
10:30 - 12:10 |
| (1) |
10:30-11:20 |
[Invited Talk]
Highly sensitive GaAsSb-based backward diodes for millimeter-wave detection  ED2014-53 |
Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitsu Labs.) |
| (2) |
11:20-11:45 |
The Theoretical Characteristic and its Experimental Verification of GaAsSb/InGaAs Double-Gate Tunnel FET ED2014-54 |
Kazumi Ohashi, Motohiko Fujimatsu, Yasuyuki Miyamoto (Tokyo Inst. of Tech.) |
| (3) |
11:45-12:10 |
Analysis of effects of dislocation scattering on device characteristics of InSb HEMT ED2014-55 |
Shota Hatsushiba, Shohei Nagai, Sachie Fujikawa (TUS), Shinsuke Hara, Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Hiroki I. Fujishiro (TUS) |
| |
12:10-13:30 |
Break ( 80 min. ) |
Fri, Aug 1 PM
13:30 - 16:40 |
| (4) |
13:30-14:20 |
[Invited Talk]
InGaAs MOSFET Source Structures Toward High Speed/low Power Applications ED2014-56 |
Yasuyuki Miyamoto, Toru Kanazawa, Yoshiharu Yonai, Atsushi Kato, Motohiko Fujimatsu, Masashi Kashiwano, Kazuto Ohsawa, Kazumi Ohashi (Tokyo Inst. of Tech.) |
| (5) |
14:20-14:45 |
Analysis of Mechanisms of Delay Time Generation in III-V DG MOSFETs ED2014-57 |
Yuki Yajima, Ryoko Ohama, Sachie Fujikawa, Hiroki I. Fujishiro (TUS) |
| (6) |
14:45-15:10 |
Improvement of Off-State Characteristics with a P-Type Capping Layer in GaAs JPHEMT ED2014-58 |
Katsuhiko Takeuchi, Satoshi Taniguchi, Masashi Yanagita (Sony), Yuji Sasaki, Mitsuhiro Nakamura (Sony Semiconductor), Shinichi Wada (Sony) |
| |
15:10-15:25 |
Break ( 15 min. ) |
| (7) |
15:25-15:50 |
Fabrication of Carbon nanotube TFT for sheet electronic device by printing method. ED2014-59 |
Hiroyuki Endoh, Noriyuki Tonouchi, Fumiyuki Nihey (NEC Corp.), Tsuyoshi Sekitani, Takao Someya (Univ.of Tokyo) |
| (8) |
15:50-16:15 |
Band offset at Al2O3/β-Ga2O3 Heterojunctions ED2014-60 |
Takafumi Kamimura (NICT), Kohei Sasaki (Tamura Corp.), Man Hoi Wong, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) |
| (9) |
16:15-16:40 |
HAXPES Analysis for GaAs Surface State for Electronics Devices ED2014-61 |
Yoshihiro Saito, Daisuke Tsurumi, Junji Iihara, Aiko Tominaga, Takumi Yonemura, Koji Yamaguchi (SEI) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Tetsuzo Ueda（Panasonic)
TEL：+81-6-6906-4940、FAX：+81-6-6906-2426
E- ：      zo  pa   c
Seiya Kasai (Hokkaido Univ.)
TEL : 011-706-6509 Fax : 011-716-6004
E- :   irciqe  i |
Last modified: 2014-06-17 15:28:17
|