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| Chair |
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Shunichiro Ohmi (Tokyo Inst. of Tech.) |
| Vice Chair |
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Tatsuya Usami (ASM Japan) |
| Secretary |
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Tomoyuki Suwa (Tohoku Univ.), Taiji Noda (Panasonic) |
| Assistant |
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Takuji Hosoi (Kwansei Gakuin Univ.), Takuya Futase (Western Digital) |
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| Conference Date |
Mon, Jun 26, 2023 10:00 - 15:30 |
| Topics |
Material Science and Process Technology for MOS Devices, Memories, and Power Devices |
| Conference Place |
Research Institute for Nanodevices, Hiroshima University |
| Address |
1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527 JAPAN |
| Transportation Guide |
https://www.rnbs.hiroshima-u.ac.jp/en/ |
Contact
Person |
Takuji Hosoi (Kwansei Gakuin Univ.) |
| Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
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Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM. |
Mon, Jun 26 AM
10:00 - 15:30 |
| |
10:00-10:10 |
Opening & Award Ceremony ( 10 min. ) |
| (1) |
10:10-10:50 |
[Memorial Lecture]
Optimum Design of Channel Material and Surface Orientation for Extremely Thin Body nMOSFETs Based on Nonlinear Modeling of Surface Roughness Scattering  SDM2023-27 |
Kei Sumita, Min-Soo Kang, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi (U. Tokyo) |
| (2) |
10:50-11:30 |
[Memorial Lecture]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic-MOSFET Operation SDM2023-28 |
Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) |
| (3) |
11:30-11:50 |
Characterization of ultrathin SiO2/SiC interfaces by using self-assembled monolayers SDM2023-29 |
Ryo Okuhira (Kwansei Gakuin Univ.), Takamasa Kawanago (Tokyo Tech), Takuji Hosoi (Kwansei Gakuin Univ.) |
| (4) |
11:50-12:10 |
Impact of SiH4 exposure to Fe-NDs on silicidation reaction SDM2023-30 |
Haruto Saito, Katsunori Makihara, Shun Tanida, Noriyuki Taoka, Seiichi Miyazaki (Nagoya Univ.) |
| (5) |
12:10-12:30 |
Evaluations of Crystalline Structures and Ferroelectricity of Zr/Hf-Multilayer Structures Formed by Thermal Oxidization SDM2023-31 |
Yunosuke Sano (Nagoya Univ.), Taoka Noriyuki (AIT), Makihara Katsunori (Nagoya Univ.), Ohta Akio (Hukuoka Univ.), Miyazaki Seiichi (Nagoya Univ.) |
| |
12:30-13:30 |
Lunch Break ( 60 min. ) |
| (6) |
13:30-14:10 |
[Invited Lecture]
Pioneering Nondestructive Imaging of Ferroelectric Capacitors by Operando Laser-Based Photoemission Electron Microscopy SDM2023-32 |
Hirokazu Fujiwara, Yuki Itoya, Masaharu Kobayashi, Cedric Bareille, Shik Shin, Toshiyuki Taniuchi (Univ. of Tokyo) |
| (7) |
14:10-14:50 |
[Invited Lecture]
Demonstration of Crystal Phase Junction Transistor SDM2023-33 |
Katsuhiro Tomioka, Yu Katsumi, Junichi Motohisa (Hokkaido Univ.) |
| (8) |
14:50-15:30 |
[Invited Talk]
Atomic-Scale and Real-Time Observation of Solid-Phase Crystallization in Thin Silicon Film using in situ Heating High-Resolution TEM
-- Toward High-Performance Poly-Si Channel -- SDM2023-34 |
Manabu Tezura, Takanori Asano, Riichiro Takaishi, Mitsuhiro Tomita, Masumi Saitoh, Hiroki Tanaka (Kioxia Corp.) |
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| Announcement for Speakers |
| General Talk | Each speech will have 15 minutes for presentation and 5 minutes for discussion. |
| Memorial Lecture | Each speech will have 35 minutes for presentation and 5 minutes for discussion. |
| Invited Lecture | Each speech will have 35 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Takuji HOSOI (Kwansei Gakuin University)
  i     k n i |
Last modified: 2023-04-26 20:21:29
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