|
|
| Chair |
|
Takao Waho |
| Vice Chair |
|
Masaaki Kuzuhara |
| Secretary |
|
Tsuyoshi Tanaka, Manabu Arai |
| Assistant |
|
Shin-ichiro Takatani |
|
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| Chair |
|
Kiyoshi Ishii |
| Vice Chair |
|
Kiichi Kamimura |
| Secretary |
|
Yoshitaka Kitamoto, Toru Matsuura |
| Assistant |
|
Hidehiko Shimizu, Seiji Toyoda |
|
|
|
| Chair |
|
Fumio Horiguchi |
| Vice Chair |
|
Tanemasa Asano |
| Secretary |
|
Morifumi Ohno, Mariko Takayanagi |
| Assistant |
|
Yuichi Matsui |
|
| Conference Date |
Thu, May 18, 2006 13:00 - 16:55
Fri, May 19, 2006 09:00 - 15:50 |
| Topics |
|
| Conference Place |
Venture Business Laboratory, Toyohashi University of Technology |
| Address |
1-1, Hibarigaoka, Tenpaku-cho, Toyohashi-shi, Aichi-ken, Japan 441-8680 |
| Transportation Guide |
Toyotetsu Bus, Toyohashi Station - GIKADAI-MAE ( The University ), No.5 bus stop, 30 min.
http://www.vbl.tut.ac.jp/ |
Contact
Person |
Prof. Akihiro Wakahara
0532-44-6742 |
Thu, May 18
13:00 - 16:55 |
| (1) |
13:00-13:25 |
Improvement of crystal properties of SrS:Cu films for EL elements by using a rapid thermal annealing |
Masaaki Isai, Kosuke Sasaki, Daisuke Nakagawa (Shizuoka Univ.) |
| (2) |
13:25-13:50 |
Preparation and evaluation of Mn oxide films for Li secodary batteries |
Yuji Chonan, Masaaki Isai, Yasushi Tojyo (Ｓｈｉｚｕｏｋａ Ｕｎｉｖ．) |
| (3) |
13:50-14:15 |
Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga2O3 Films Deposited by CSD Method for High Temperatures |
Marilena Bartic (Shizuoka Univ.), Cristian-Ioan Baban (Al. I. Cuza Univ.), Masaaki Isai, Masami Ogita (Shizuoka Univ.) |
| (4) |
14:15-14:40 |
Fabrication of epitaxial γ-Al2O3 thin films by an oxide reduction method and its device applications |
Takayuki Okada, Mikinori Ito (Toyohashi Univ. of Tech.), Kazuaki Sawada, Makoto Ishida (Toyohashi Univ. of Tech./JST) |
| |
14:40-14:50 |
Break ( 10 min. ) |
| (5) |
14:50-15:15 |
RPE-MOCVD-growth of Zn1-xCdxO film for visible emission region |
Toshiya Ohashi, Junji Ishihara, Atsushi Nakamura, Toru Aoki, Jiro Temmyo (Shizuoka Univ.) |
| (6) |
15:15-15:40 |
Control of ZnO nanodots on sapphire substrate. |
Kota Okamatsu, Satoshi Nakagawa, Atsushi Nakamura, Toru Aoki, Jiro Temmyo (Shizuoka Univ.) |
| (7) |
15:40-16:05 |
Contorol of carbon-nano structure by thermal decomposition on SiC |
Yoshitaka Hashimoto, Guogiang Zhang, Atsushi Nakamura, Akira Tanaka, Jiro Temmyo (Sizuoka Univ.) |
| (8) |
16:05-16:30 |
Synthesis of GaN based blue phosphors using metal EDTA complex |
Shinya Koide, Kazuya Nakamura, Yuhuai Liu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ), Atsushi Nakamura, Nobuyishi Nanbu (chubu chelest) |
| (9) |
16:30-16:55 |
Fabrication and Characterization of Photonic Crystal structure on microfabricated Si Substrate |
Takeharu Ishii, Fumiaki Matsuoka, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) |
Fri, May 19
09:00 - 15:50 |
| (1) |
09:00-09:25 |
Microstructure of group-III nitride semiconductors grown on m-plane SiC |
Tetsuya Nagai, Takeshi Kawashima, Kiyotaka Nakano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) |
| (2) |
09:25-09:50 |
Heteroepitaxy of GaN for Si-GaN OEIC |
Tatsuya Kawano, Susumu Hatakenaka, Mikinori Itoh, Akihiro Wakahara, Hiroshi Okada, Makoto Ishida (Toyohashi Univ. Tech.) |
| (3) |
09:50-10:15 |
Electrical Properties of GaPN |
Akihiro Wakahara, Yuzo Furukawa, Atsushi Sato, Eri Shimada, Daisuke Minohara, Hiroo Yonezu (toyohashi Univ. of Tech.) |
| (4) |
10:15-10:40 |
InGaPN/GaPN Quantum Well Structures for Si/III-V-N Optoelectronic Integrated Circuits |
Kazuyuki Umeno, Sung Man Kim, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.) |
| |
10:40-10:50 |
Break ( 10 min. ) |
| (5) |
10:50-11:15 |
Fabrication of MOSFETs and LEDs for Si/III-V-N Optoelectronic Integrated Circuits |
Naruto Ohta, Yuji Morisaki, Soo-Young Moon, Seigi Ishiji, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.) |
| (6) |
11:15-11:40 |
Improvement of crystal quality for high effeciency of spin-polarized electron source based on GaAs/GaAsP super-lattice structure |
Toru Ujihara, Chen Bo, Kenichi Yasui, Ryosuke Sakai, Masahiro Yamamoto, Tsutomu Nakanisihi, Yoshikazu Takeda (Nagoya Univ.) |
| (7) |
11:40-12:05 |
Fabrication of patterned GaInAs/GaAs hetero-structure using amorphous arsenic mask |
Yosuke Noritake, Takumi Yamada, Masao Tabuchi, Yoshikazu Takeda (Nagoya Univ.) |
| |
12:05-13:10 |
Lunch Break ( 65 min. ) |
| (8) |
13:10-13:35 |
Leakage current control of AlGaN Schottky interfaces by surface control process using thin Al layer |
Junji Kotani, Masamitsu Kaneko, Tamotsu Hashizume (Hokkaido Univ.) |
| (9) |
13:35-14:00 |
Electrical characteristics of n-type diamond Schottky diodes and metal/diamond interfaces |
Mariko Suzuki (Toshiba), Satoshi Koizumi (NIMS), Masayuki Katagiri (Univ of Tsukuba), Tomio Ono, Naoshi Sakuma, Hiroaki Yoshida, Tadashi Sakai (Toshiba) |
| (10) |
14:00-14:25 |
Estimation of trap parameters from a slow component of excess carrier decay curves |
Masaya Ichimura (Nagoya Inst. Technol.) |
| |
14:25-14:35 |
Break ( 10 min. ) |
| (11) |
14:35-15:00 |
Light irradiation effect on single-hole-tunneling current of an SOI-FET |
Zainal A. Burhanudin, Ratno Nuryadi, Michiharu Tabe (Shizuoka Univ.) |
| (12) |
15:00-15:25 |
Tunneling current oscillations in Si/SiO2/Si structures |
Daniel Moraru, Daisuke Nagata (Shizuoka Univ.), Seiji Horiguchi (Akita Univ.), Ratno Nuryadi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) |
| (13) |
15:25-15:50 |
Fabrication of Microchips for Blood Examination Integrated with Solution Pre-treatment Mechanism and Synchronous Photodetection Unit. |
Toshihiko Noda, Nozomu Hirokubo (Toyohashi Univ. of Tech.), Hidekuni Takao (Toyohashi Univ. of Tech./JST), Narihiro Oku, Kouichi Matsumoto (HORIBA, Ltd.), Kazuaki Sawada, Makoto Ishida (Toyohashi Univ. of Tech./JST) |
| Announcement for Speakers |
| General Talk (25分) | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Tsuyoshi Tanaka（Matsushita）
TEL: 075-956-9083, FAX: 075-956-9110
E- :     erl  ci
Manabu Arai（New JRC）
TEL: 049-278-1477、FAX: 049-278-1419
E-:   injr
Shinichiro Takatani（Hitachi）
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr |
| CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
|
| Contact Address |
Yoshitaka Kitamoto (Tokyo Institute of Technology)
TEL 045-924-5424, FAX 045-924-5433
E-:    iem  
Tohru Matsuura (ATR)
TEL 0774-95-1173, FAX 0774-95-1178
E-: h matr |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Mariko Takayanagi (Toshiba)
TEL 045-770-3638 ,FAX 045-770-3571
E-:     gi ba |
Last modified: 2006-03-27 20:21:08
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